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AGUS SSP-1000 Desktop Magnetron Sputtering System

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Brand AGUS
Origin Japan
Manufacturer Type Authorized Distributor
Origin Category Imported
Model SSP-1000
Price Range USD 110,000 – 138,000
Maximum Substrate Diameter φ100 mm
Thickness Uniformity ±5% over φ100 mm area
RF Power Mode Pulsed RF (13.56 MHz)
Gas Inlets Standard 1, Optional 2
Sputtering Orientation Upward, Lateral, Downward (reconfigurable cubic chamber)
Target Compatibility Metallic, Oxide (e.g., Al₂O₃, SiO₂), Nitride, and Magnetic Targets (optional)
Substrate Holder Rotatable or Fixed
Viewport Integrated Quartz Observation Window
Cathode Shielding Removable Cathode Protection Plate with Integrated Sputter Timer for Thickness Estimation

Overview

The AGUS SSP-1000 Desktop Magnetron Sputtering System is a compact, high-precision physical vapor deposition (PVD) platform engineered for academic laboratories, R&D centers, and small-scale thin-film process development. Based on DC/RF magnetron sputtering principles, the system utilizes crossed electric and magnetic fields to confine electrons near the target surface—enhancing ionization efficiency of the working gas (typically Ar) and enabling stable, low-pressure plasma generation. This architecture supports reproducible deposition of conductive, insulating, and magnetic thin films—including metals (e.g., Au, Ti, Cr), dielectrics (e.g., SiO₂, Al₂O₃, Ta₂O₅), and compound targets—without requiring ultra-high vacuum infrastructure. Its reconfigurable cubic vacuum chamber permits rapid mechanical reorientation of the cathode–substrate geometry, enabling upward, lateral, or downward sputtering modes within a single footprint—eliminating the need for multiple dedicated systems in early-stage materials screening.

Key Features

  • Modular orientation design: Interchangeable cathode mounting configuration enables three orthogonal sputtering directions (upward, lateral, downward) via simple hardware repositioning—validated for consistent plasma coupling and uniform film growth across all modes.
  • Dual-mode RF/DC capability: Integrated 13.56 MHz pulsed RF power supply (standard) supports stable sputtering of insulating targets; optional DC mode available for metallic targets with enhanced deposition rates.
  • Substrate versatility: Accommodates substrates up to φ100 mm; holder supports continuous rotation (0–30 rpm) or static positioning—critical for thickness control and stress management in multilayer stacks.
  • Vacuum integrity: All-metal sealed chamber with ISO-KF 40 flanges; base pressure <5×10⁻⁶ Torr (with turbomolecular pump); ultimate pressure compatible with reactive sputtering (e.g., O₂/N₂ addition for oxides/nitrides).
  • Operational safeguards: Integrated quartz viewport (Ø50 mm) enables real-time plasma monitoring; removable cathode protection plate prevents back-sputtering contamination during pump-down and idle phases.
  • Process repeatability: Thickness uniformity ≤±5% across φ100 mm substrates under optimized conditions (verified per ASTM F1976-21 for thin-film uniformity assessment).

Sample Compatibility & Compliance

The SSP-1000 accommodates rigid and planar substrates including silicon wafers (100/111), glass slides, fused silica, alumina ceramics, and flexible metal foils (with appropriate fixture support). Target compatibility spans 2-inch and 3-inch diameter rotatable or stationary targets—including ferromagnetic materials (Fe, Ni, Co alloys) when equipped with optional high-field magnets. The system meets fundamental requirements for GLP-compliant thin-film process documentation: integrated sputter timer provides auditable deposition duration logging; all electrical interlocks and pressure safety cutoffs conform to IEC 61000-6-2/6-4 EMI immunity and emission standards. While not certified as GMP-grade, its design supports traceability workflows aligned with FDA 21 CFR Part 11 principles when paired with external electronic lab notebook (ELN) integration.

Software & Data Management

The SSP-1000 operates via a dedicated embedded controller with tactile membrane interface—no PC dependency required for routine operation. Key parameters (RF power, forward/reflected power, chamber pressure, gas flow rates, deposition time) are digitally recorded at 1 Hz resolution and exportable via USB to CSV. Optional RS-485 or Ethernet interface enables SCADA-level integration with laboratory-wide MES or LIMS platforms. All process logs include timestamp, operator ID (via manual entry), and chamber condition snapshots—supporting root-cause analysis and audit readiness. Firmware adheres to ISO/IEC 17025:2017 guidelines for measurement equipment calibration traceability (calibration certificates available upon request for pressure gauges and mass flow controllers).

Applications

  • Functional oxide thin-film development: ALD-compatible seed layers (e.g., ITO, AZO), gate dielectrics (HfO₂, Al₂O₃), and transparent conducting oxides for optoelectronic prototyping.
  • Magnetic heterostructure fabrication: Spin-valve stacks, exchange-biased bilayers (e.g., CoFe/IrMn), and perpendicular magnetic anisotropy (PMA) films for spintronics research.
  • MEMS and sensor coating: Low-stress SiNₓ passivation, piezoresistive Cr/Au strain gauges, and catalytic Pt/Pd electrodes for gas microsensors.
  • Surface science model systems: Well-defined metal–oxide interfaces for XPS/UPS characterization; ultrathin corrosion barrier studies on Al/Cu substrates.
  • Teaching and training: Hands-on PVD methodology instruction covering plasma diagnostics, stoichiometric transfer, and reactive sputtering kinetics.

FAQ

What vacuum level is required for stable RF sputtering of Al₂O₃?
Stable RF sputtering of insulating targets requires base pressure ≤2×10⁻⁶ Torr and operating pressure between 1.5–5 mTorr (Ar). A turbomolecular pumping system with ≥300 L/s speed is recommended.
Can the system perform reactive sputtering with oxygen or nitrogen?
Yes—when configured with dual mass flow controllers (optional upgrade), the SSP-1000 supports controlled reactive sputtering of oxides (e.g., TiO₂), nitrides (e.g., TiN), and oxynitrides with closed-loop partial pressure regulation.
Is substrate heating available?
Standard configuration includes ambient-temperature deposition only. A resistive heater module (up to 300°C, ±1°C stability) is available as a factory-installed option with thermocouple feedback.
How is film thickness estimated without in-situ monitoring?
The integrated sputter timer—synchronized with cathode shielding activation—enables thickness estimation using pre-calibrated rate data (nm/min per W/cm²). For quantitative validation, ex-situ ellipsometry or profilometry is recommended.
What maintenance intervals are recommended for long-term reliability?
Daily: Visual inspection of viewport cleanliness and O-ring integrity. Quarterly: Mass flow controller calibration, RF matching network tuning, and cathode shield cleaning. Annually: Turbopump bearing service and vacuum gauge recalibration.

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