LaAlO₃ + La₀.₅Sr₀.₅TiO₃ Heterostructure Thin Film on (100)-Oriented LaAlO₃ Substrate
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | LaAlO₃ + La₀.₅Sr₀.₅TiO₃ Thin Film |
| Thickness | ~400 nm |
| Substrate Orientation | (100) |
| Substrate Dimensions | 10 × 10 × 0.5 mm |
| Fabrication Method | Spin Coating + Post-Deposition Annealing |
| Packaging | Vacuum-Sealed in Class 100 Cleanroom Bag (Class 1000 Cleanroom Environment) or Individual Cleanroom Cassette |
Overview
This epitaxial heterostructure thin film consists of a La0.5Sr0.5TiO3 (LSTO) layer deposited on a single-crystal (100)-oriented LaAlO3 (LAO) substrate. Engineered for fundamental research in oxide electronics and interfacial quantum phenomena, the system leverages the lattice-matched interface (mismatch < 0.5%) between LAO and LSTO to enable high-quality, strain-controlled perovskite film growth. The LSTO layer exhibits metallic conductivity with tunable carrier density and strong electron correlation effects, while the LAO substrate provides structural stability, dielectric isolation, and compatibility with in situ characterization techniques including angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and transport measurements under cryogenic conditions.
Key Features
- Highly oriented (100) crystallographic alignment confirmed by X-ray diffraction (XRD) θ–2θ scans and rocking curve full-width at half-maximum (FWHM) < 0.2°
- Uniform thickness (~400 nm) achieved via optimized spin-coating parameters and controlled thermal annealing in oxygen-rich atmosphere (≥1 atm O2, 700–800 °C)
- Atomically flat surface morphology with root-mean-square (RMS) roughness < 0.3 nm over 5 × 5 µm2 area, verified by atomic force microscopy (AFM)
- Electrically conductive LSTO layer with sheet resistance typically ranging from 10−3 to 10−1 Ω/□ at room temperature, dependent on annealing profile and oxygen stoichiometry
- Substrate-grade LaAlO3 with optical transparency > 85% in visible–near-IR range and thermal expansion coefficient closely matched to LSTO (≈10.5 × 10−6 K−1)
- Processed and packaged in ISO Class 4 (100-level) cleanroom environment to minimize particulate contamination and surface adsorbates
Sample Compatibility & Compliance
The film is compatible with standard ultra-high vacuum (UHV) transfer systems, molecular beam epitaxy (MBE) load-lock integration, and ex situ electrical probing using microfabricated contact pads or wire bonding. All substrates undergo rigorous pre-shipment inspection—including optical microscopy, surface wettability assessment, and residual carbon analysis via XPS—to ensure integrity for sensitive surface science experiments. Packaging complies with ASTM F1249–21 standards for moisture vapor transmission rate (MVTR) control in sealed cleanroom bags. While not certified to ISO 13485 or FDA 21 CFR Part 11 (as it is a research-grade material, not a medical device or regulated software), documentation supports GLP-compliant lab recordkeeping when used in federally funded materials science projects.
Software & Data Management
As a passive physical specimen—not an instrument—this thin film does not include embedded firmware or proprietary software. However, it is fully compatible with industry-standard data acquisition platforms including Keysight B1500A Semiconductor Parameter Analyzer, Quantum Design Physical Property Measurement System (PPMS), and Scienta Omicron DA30 electron spectrometers. Users may integrate measurement metadata (e.g., temperature, magnetic field, gate voltage) into FAIR-compliant repositories (e.g., Materials Data Facility, NOMAD) using open formats such as CIF, NeXus, or JSON-LD. Traceability is maintained via unique lot-number labeling on each cassette, enabling reproducible experimental replication across laboratories.
Applications
- Interface-driven emergent phenomena: two-dimensional electron gas (2DEG) formation at LAO/LSTO heterointerfaces
- Gate-tunable transport studies in complex oxide field-effect transistors (FETs)
- Spin-orbit coupling investigations via spin-polarized STM and spin-resolved ARPES
- Model system for correlated electron physics, including Mott transitions and charge ordering
- Template for subsequent heteroepitaxial growth of functional oxides (e.g., superconducting cuprates, multiferroics)
- Reference substrate for calibration of XRD texture analyzers and RHEED intensity oscillation modeling
FAQ
Is this film suitable for in situ growth of additional layers?
Yes—the LAO(100) surface is atomically terminated and hydroxyl-free after proper annealing, making it compatible with pulsed laser deposition (PLD), sputtering, and MBE.
What is the typical carrier mobility in the LSTO layer?
Mobility ranges from 1–5 cm²/V·s at 300 K, depending on oxygen vacancy concentration and interfacial disorder; low-temperature values (≤10 K) exceed 10 cm²/V·s in optimized samples.
Can I request XRD or AFM validation data for my specific lot?
Yes—certificates of analysis (CoA) including θ–2θ scan plots, rocking curves, and AFM topographs are available upon request prior to shipment.
Do you offer custom thicknesses or doping variations?
Yes—custom synthesis (e.g., La1−xSrxTiO3 with x = 0.3–0.7, thickness 20–1000 nm) is available under NDA with minimum order quantities and lead times of 8–12 weeks.
