NS
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| Brand | NS |
|---|---|
| Origin | Japan |
| Model | 4 IBE |
| Sample Holder | 4" φ, single wafer |
| Ion Incidence Angle | 0° to ±90° |
| Ion Source | KDC-40 Kaufman-type (KRI, USA) |
| Base Pressure | ≤1×10⁻⁴ Pa |
| Turbomolecular Pump | Pfeiffer, 350 L/s |
| Etch Uniformity | ≤±5% |
| Cooling | Direct substrate cooling |
| Motion Control | Planetary rotation (rotation + revolution) |
| Gas Compatibility | Ar, O₂, N₂, CF₄, Xe, and mixed process gases |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | NS-5 |
| Ion Source Type | Kaufman-type |
| Beam Diameter | 10 cm |
| Sample Stage Cooling | Direct-contact cryogenic cooling |
| Stage Motion | Combined rotation and revolution |
| Beam Tilt Adjustment | Fully variable (0–90°) |
| Application Scope | R&D and low-volume production |
| Substrate Compatibility | Up to 6-inch diameter wafers |
| Power Supply Compatibility | Interchangeable with domestic 220 V / 50 Hz AC input |
| Compliance | Designed for ISO Class 5 cleanroom integration |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | NS-12 |
| Etching Principle | Broad-Beam Ion Beam Etching (IBE) |
| Substrate Capacity | 12 × Ø4″ wafers or 3 × Ø18″ wafers |
| Cooling | Direct substrate cooling via chilled chuck |
| Ion Source | 20 cm Kaufman-type ion source (original equipment from Kimball Physics / formerly Kaufman & Robinson) |
| Beam Steering | Adjustable incidence angle (0°–75°) |
| Rotation Mechanism | Independent planetary rotation (substrate rotation + revolution) |
| Residue-Free Processing | Yes |
| Power Supply Compatibility | Dual-voltage input (100 V / 200 V AC, 50/60 Hz) |