Chemical Vapor Deposition Equipment
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Showing 31–40 of 40 results
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | Imported Semiconductor CVD System |
| Model | PECVD Series |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication, MEMS, III-V & Wide-Bandgap Devices (GaAs, SiC, CPV), LED, SOI, TSV |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Pressure | 1×10⁻⁶ mbar |
| Operating Pressure Range | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm, Z-axis motorized translation |
| Plasma Source | 915 MHz, up to 36 kW microwave generator |
| Process Duration Capability | Up to 500 h continuous operation |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis motion |
| Max. Continuous Process Duration | ≥3 weeks |
| Temperature Control | Precision ±1°C over full operating range |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-100ST |
| Substrate Diameter | Ø100 mm (4") |
| Deposition Temperature Range | 80–400 °C |
| SiO₂ Deposition Rate | >300 nm/min |
| Maximum Film Thickness | Up to 100 µm |
| Deposition Technology | Liquid-source PECVD with RF self-bias coupling |
| Precursor Type | Liquid TEOS (tetraethyl orthosilicate), optional Ge/P/B dopant sources |
| Stress Control | Low-stress SiO₂ via self-bias tuning |
| Step Coverage | High-aspect-ratio conformality |
| Footprint | Compact, cleanroom space-optimized |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |
| Brand | Zhonghuan Furnace |
|---|---|
| Origin | Tianjin, China |
| Model | 1200°C Sliding-Stage CVD System |
| Heating Zone | Single or Multi-Zone Optional |
| Max Operating Temperature | 1200°C |
| Sliding Mechanism | Manual or Motorized with Position Limit Switches |
| Cooling Method | Integrated Forced-Air Quenching System |
| Gas Control | Multi-Channel Mass Flow Controller (MFC) System |
| Vacuum Capability | Medium-Vacuum (10⁻¹–10⁻³ Pa) or High-Vacuum (≤5×10⁻⁵ Pa) Configurable |
| Temperature Control Algorithm | Fuzzy PID Programmable Logic Controller |
| Vacuum Interface | Custom Quick-Connect Flange Assembly |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Brand | Zhonghuan Furnace |
|---|---|
| Origin | Tianjin, China |
| Model | CVD-12II-3Z/G |
| Max Temperature | 1200°C |
| Heating Zone | Dual-zone |
| Tube Diameter | Φ50/Φ60/Φ80 mm or Φ80/Φ100 mm |
| Heating Length | 420 mm / 600 mm |
| Uniform Zone Length | 280 mm / 390 mm |
| Rated Power | 3.2 kW / 4.8 kW |
| Voltage | 220 V AC |
| Temp Control | 50-segment programmable PID controller, ±1°C accuracy |
| Gas Channels | 3 (expandable) |
| Mass Flow Range | 0–500 sccm (N₂-calibrated, ±1% F.S.) |
| Response Time | ≤4 s |
| Inlet Pressure | 0.05–0.3 MPa (gauge) |
| Vacuum System | High-vacuum option with turbomolecular pump (1200 L/s or 1600 L/s, base pressure ≤5×10⁻⁶ Pa) |
| Connection | KF-flanged stainless steel bellows, manual high-vacuum gate valve, digital vacuum gauge |
| Overall Dimensions (w/o HV) | 530 × 1440 × 750 mm |
| Weight | 330 kg |
| Brand | Zhonghuan Furnace |
|---|---|
| Origin | Tianjin, China |
| Model | CVD-12II6SH-3Z (Dual-Zone) / CVD-12III9SH-3Z (Triple-Zone) |
| Max Temperature | 1200 °C |
| Heating Zone Length | 610 mm / 940 mm |
| Uniform Temperature Zone | 400 mm / 700 mm |
| Quartz Tube ID/OD | Φ80 mm / Φ100 mm |
| Rated Power | 4.8 kW / 7.2 kW |
| Voltage | 220 V / 380 V (3-phase) |
| Sliding Stroke | 485 mm / 650 mm |
| Sliding Mode | Manual or Motorized (Temperature-Programmed Auto-Translation) |
| Temperature Control | 50-Stage Programmable PID Controller, ±1 °C Accuracy |
| Gas Channels | Up to 3 Mass Flow Controlled Lines (0–500 sccm, N₂-calibrated, ±1% F.S.) |
| Vacuum System Options | Medium Vacuum (1×10⁻¹–1×10⁻³ Pa) or High Vacuum (1×10⁻³–1×10⁻¹ Pa |
| Sealing | Dual-Knurled KF Flanges with Multi-Ring Dynamic Seal Architecture |
| Cooling | Integrated Forced-Air Quenching System for Rapid Post-Process Thermal Extraction |