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Hefei Kejing Materials Technology Co., Ltd.

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BrandHefei Kejing
Substrate Diameter50.8 mm ±1 mm
Substrate Orientationc-plane (0001) ±1.0°
Substrate MaterialAl₂O₃ (sapphire)
Film Thickness10–5000 nm
Conductivity TypeSemi-insulating
Threading Dislocation Density (TDD)XRD FWHM (0002) < 500 arcsec, XRD FWHM (10–12) < 1500 arcsec
Effective Area>80%
Surface FinishSingle-side polished
CustomizationAvailable for non-standard orientations and dimensions
PackagingClass 1000 cleanroom environment
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KeyPurity: 99.95%
Cu Thickness50 µm
Sheet Resistance300–500 Ω/□
Monolayer Coverage≥90–96% (size-dependent)
Layer CountSingle-layer or 2–4 layers
Substrate DimensionsCustom up to 45 cm × 50 cm
StorageDry, oxygen-free environment, <30°C, use within 30 days
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BrandHefei Kejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Origin CategoryDomestic (PRC)
Model34A-SA
PriceUpon Request
Length120 mm
Tip TypeFlat, Precision Ground
ApplicationQCM Crystal Mounting & Electrode Handling
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BrandHefei Kejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Country of OriginChina
ModelQuartz-Substrate Graphene Film
Thickness1 mm / 2 mm
Quartz Transmittance>93% (at 550 nm)
Sheet Resistance300–500 Ω/□ (monolayer), 200–300 Ω/□ (bilayer)
Monolayer Coverage≥95%
Available Sizes1 cm × 1 cm, 2 cm × 2 cm, 5 cm × 5 cm
Storage ConditionDry, oxygen-free environment at <30 °C
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BrandKejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Origin CategoryDomestic (China)
ModelPTL-HT-B
Instrument TypeVertical Dual-Zone Tube Furnace
Max Temperature1200°C
Continuous Operating Temperature1100°C
Temperature Control Accuracy±1°C
Max Power1.5 kW
Heating Rate to Max Temp10°C/min
Heating MethodPID-Controlled Digital Temperature Controller
Internal Chamber Dimensions50 mm O.D. × 44 mm I.D. × 450 mm L
Dual Heating Zones2 × 100 mm length, total 200 mm heated length
Max Achievable Axial Temperature Gradient1°C/cm
Lift MechanismTouchscreen-Controlled DC Motor with Programmable Speed (1–500 µm/sec, ±0.05% accuracy), 450 mm total travel
Standard Suspension Wires3 × Ni-SS (up to 800°C)
Quartz Tube50 mm O.D. × 44 mm I.D. × 450 mm L
EnclosureCE-certified
Warranty1 year parts & labor (excludes quartz tubes, seals, heating elements, and suspension wires)
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BrandMTI Corporation (formerly Hefei Kejing)
ModelMSK-MR100DC
Roller Diameter × LengthΦ100 mm × 100 mm
Roller Surface HardnessRC > 62 (Chromium-plated carbon steel)
Gap Adjustment Range0–1.8 mm (micrometer-verified)
Linear Speed5–40 mm/s (continuously adjustable via potentiometer)
Drive Motor24 V DC, high-torque, max. current 1.8 A, rated power 40 W
Input Power110–220 V AC, 50/60 Hz
Dimensions (L×W×H)430 × 175 × 290 mm
WeightApprox. 18 kg
ComplianceCE, UL/CSA-certified external power supply
Max. Sample Hardness≤50 HRC
Min. Final Thickness (typical)0.04 mm (graphite-coated Cu foil), 0.09 mm (LiFePO₄-coated Al foil)
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BrandHefei Kejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Product CategoryDomestic
ModelGaP Single-Crystal Substrate
PricingAvailable Upon Request
Crystal Orientation<100> (standard)
Dimensions10 × 10 × 0.5 mm or Ø2" × 0.5 mm
Surface FinishSingle- or Double-Sided Polished
Surface Roughness (Ra)<0.15 nm
Hardness (Mohs)3.0
Density4.78 g/cm³
Refractive Index3.45
Elastic Modulus71 GPa
Growth MethodLiquid Encapsulated Czochralski (LEC)
Melting Point1072 °C
Carrier Concentration Range1×10¹⁶ – 6×10¹⁸ cm⁻³
Dislocation Density<5×10⁴ cm⁻²
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BrandHefei Kejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Origin CategoryDomestic
ModelInP/InGaAs:Zn Epi-Wafer
PricingUpon Request
Substrate Diameter2 inch (50.8 mm)
Substrate Thickness350 µm ± 25 µm
Substrate Orientation<100> ± 0.5° with Primary Flat
Substrate DopingUndoped
Substrate Carrier Concentration (Nc)< 1 × 10¹⁶ cm⁻³
Substrate Etch Pit Density (EPD)< 1 × 10⁴ cm⁻²
Epilayer CompositionLattice-Matched p-Type InGaAs:Zn (100)
Epilayer DopingZn (p-type)
Epilayer Carrier Concentration1 × 10¹⁷ – 1 × 10¹⁸ cm⁻³
Epilayer Thickness1.0 µm ± 5%
Surface FinishSingle-Side Polished
Epilayer RMS Roughness≤ 0.2 nm (≈1 monolayer)
PackagingClass 100 cleanroom bag under vacuum or individual cassette in Class 1000 cleanroom environment
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BrandHefei Kejing
OriginAnhui, China
ModelVGB-2
Acrylic Thickness6 mm
Side Door Diameter400 mm
Antechamber Dimensions240 mm × 240 mm (Door Opening: Ø230 mm)
Glove Port Diameter150 mm
Vacuum GaugesDual Analog Vacuum Gauges (Chamber & Antechamber)
Vacuum Isolation ValvesSeparate Manual Shut-off Valves for Chamber and Antechamber
Antechamber Ultimate Vacuum≤0.1 mbar
Chamber AtmosphereInert Gas Purged (N₂ or Ar), No Vacuum Capability Due to Acrylic Structural Limitations
Net Weight21 kg
External Dimensions1000 mm (L) × 500 mm (W) × 500 mm (H)
Packaging Dimensions1524 mm × 864 mm × 711 mm (60" × 34" × 28")
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BrandHefei Kejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Origin ClassificationDomestic (PRC)
ModelCo Foil
PricingUpon Request
Standard Dimensions10 mm × 10 mm × 1.0 mm
PackagingVacuum-sealed in Class 100 cleanroom bags, processed in Class 1000 cleanroom environment
Storage RequirementMaintain under inert atmosphere or high-vacuum conditions to prevent surface oxidation
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BrandHefei Kejing
OriginAnhui, China
Manufacturer TypeAuthorized Distributor
Origin CategoryDomestic
ModelInP Crystal Substrate
PricingAvailable Upon Request
Crystal StructureSingle-Crystal Indium Phosphide
DopingUndoped / Sn / S / Fe / Zn
Conductivity TypeN-type (Sn, S, Fe) / Semi-Insulating (Fe, Zn) / P-type (Zn)
Hardness3.0 Mohs
Density4.78 g/cm³
Refractive Index3.45 (at 10.6 µm)
Carrier Concentration1–2×10¹⁶ cm⁻³ (undoped), 1–3×10¹⁸ cm⁻³ (Sn-doped), 1–4×10¹⁸ cm⁻³ (S-doped), 6–4×10¹⁸ cm⁻³ (Fe-doped)
Dislocation Density<5×10⁴ cm⁻²
Growth MethodLiquid Encapsulated Czochralski (LEC)
Melting Point1072 °C
Elastic Modulus7.1×10¹¹ dyn·cm⁻²
Standard Orientations<100>
Standard Dimensions10 mm × 10 mm × 0.5 mm
Surface FinishSingle-Side or Double-Side Polished
Surface Roughness (Ra)<15 Å
Cleanroom HandlingPackaged in Class 100 cleanroom bags within Class 1000 cleanroom environment
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Brand合肥科晶
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelVGF-GaAs-2INCH-N-TE
PriceUpon Request
Growth MethodVertical Gradient Freeze (VGF)
Crystal Orientation<100> ±0.5°, 2° off toward <101>
Diameter × Thickness2 inch (50.8 mm) × 0.5 mm
Surface FinishSingle-side polished (SSP)
Doping TypeN-type, Tellurium (Te)
Carrier Concentration(1.5–26) × 10¹⁷ cm⁻³
Electron Mobility2700–3600 cm²/V·s
Resistivity9 × 10⁻⁴ – 1.1 × 10⁻² Ω·cm
Etch Pit Density (EPD)< 8 × 10³ cm⁻²
PackagingVacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual wafer cassettes
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