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| Brand | Hefei Kejing |
|---|---|
| Substrate Diameter | 50.8 mm ±1 mm |
| Substrate Orientation | c-plane (0001) ±1.0° |
| Substrate Material | Al₂O₃ (sapphire) |
| Film Thickness | 10–5000 nm |
| Conductivity Type | Semi-insulating |
| Threading Dislocation Density (TDD) | XRD FWHM (0002) < 500 arcsec, XRD FWHM (10–12) < 1500 arcsec |
| Effective Area | >80% |
| Surface Finish | Single-side polished |
| Customization | Available for non-standard orientations and dimensions |
| Packaging | Class 1000 cleanroom environment |
| Key | Purity: 99.95% |
|---|---|
| Cu Thickness | 50 µm |
| Sheet Resistance | 300–500 Ω/□ |
| Monolayer Coverage | ≥90–96% (size-dependent) |
| Layer Count | Single-layer or 2–4 layers |
| Substrate Dimensions | Custom up to 45 cm × 50 cm |
| Storage | Dry, oxygen-free environment, <30°C, use within 30 days |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Quartz-Substrate Graphene Film |
| Thickness | 1 mm / 2 mm |
| Quartz Transmittance | >93% (at 550 nm) |
| Sheet Resistance | 300–500 Ω/□ (monolayer), 200–300 Ω/□ (bilayer) |
| Monolayer Coverage | ≥95% |
| Available Sizes | 1 cm × 1 cm, 2 cm × 2 cm, 5 cm × 5 cm |
| Storage Condition | Dry, oxygen-free environment at <30 °C |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model | InP/InGaAs:Zn Epi-Wafer |
| Pricing | Upon Request |
| Substrate Diameter | 2 inch (50.8 mm) |
| Substrate Thickness | 350 µm ± 25 µm |
| Substrate Orientation | <100> ± 0.5° with Primary Flat |
| Substrate Doping | Undoped |
| Substrate Carrier Concentration (Nc) | < 1 × 10¹⁶ cm⁻³ |
| Substrate Etch Pit Density (EPD) | < 1 × 10⁴ cm⁻² |
| Epilayer Composition | Lattice-Matched p-Type InGaAs:Zn (100) |
| Epilayer Doping | Zn (p-type) |
| Epilayer Carrier Concentration | 1 × 10¹⁷ – 1 × 10¹⁸ cm⁻³ |
| Epilayer Thickness | 1.0 µm ± 5% |
| Surface Finish | Single-Side Polished |
| Epilayer RMS Roughness | ≤ 0.2 nm (≈1 monolayer) |
| Packaging | Class 100 cleanroom bag under vacuum or individual cassette in Class 1000 cleanroom environment |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Classification | Domestic (PRC) |
| Model | Co Foil |
| Pricing | Upon Request |
| Standard Dimensions | 10 mm × 10 mm × 1.0 mm |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags, processed in Class 1000 cleanroom environment |
| Storage Requirement | Maintain under inert atmosphere or high-vacuum conditions to prevent surface oxidation |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | VGF-GaAs-2INCH-N-TE |
| Price | Upon Request |
| Growth Method | Vertical Gradient Freeze (VGF) |
| Crystal Orientation | <100> ±0.5°, 2° off toward <101> |
| Diameter × Thickness | 2 inch (50.8 mm) × 0.5 mm |
| Surface Finish | Single-side polished (SSP) |
| Doping Type | N-type, Tellurium (Te) |
| Carrier Concentration | (1.5–26) × 10¹⁷ cm⁻³ |
| Electron Mobility | 2700–3600 cm²/V·s |
| Resistivity | 9 × 10⁻⁴ – 1.1 × 10⁻² Ω·cm |
| Etch Pit Density (EPD) | < 8 × 10³ cm⁻² |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual wafer cassettes |
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