Process Measurement & Detection Equipment
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| Brand | 4D TECHNOLOGY |
|---|---|
| Origin | USA |
| Model | 280SI |
| Automation Level | Fully Automatic |
| Sheet Resistance Range | 0.001 Ω/□ to 8×10⁵ Ω/□ (Standard) |
| Sheet Resistance Accuracy | <0.1% |
| Resistivity Range | 0.001 Ω·cm to 8×10⁵ Ω·cm (derived from sheet resistance and user-input film thickness) |
| Resistivity Accuracy | <0.1% |
| Substrate Size Support | 2–8 inch wafers (333-series supports up to 12 inch |
| Test Current Accuracy | <0.1% |
| Probe Force Adjustment Range | 90–200 g |
| Probe Tip Material | Tungsten carbide with sapphire bushings |
| Edge Correction Capability | Yes, within 3 mm from wafer edge |
| Measurement Speed | >45 points/min |
| Repeatability | <0.2% (per substrate) |
| Data Output | 2D/3D contour maps, statistical summaries, Excel-compatible reports |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Cross-Plane Thermal Conductivity) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (total thickness, including substrate) |
| Substrate Options | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ISO/IEC 17025-aligned methodology, compatible with GLP documentation workflows |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Frequency-Doubled Resistive Heating + Surface Thermal Reflectance Detection) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (T, including substrate) |
| Substrate Materials | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ASTM E1461 (modified), ISO 22007-2 (principle-aligned), GLP-ready data traceability |
| Brand | Aiyao Instruments |
|---|---|
| Origin | Taiwan |
| Model | XW-A300 |
| Measurement Principles | Spectral Interferometry (IR), White-Light Interferometry (WLI), Optical Reflectometry |
| Sample Compatibility | 4″–12″ wafers |
| Probe Configuration | Single or Dual (top/bottom) |
| Compliance | SEMI S2/S8 |
| Motion Platform | Air-bearing vibration-isolated stage |
| Software | WaferSpect™ with full mapping, statistical analysis, and GLP-compliant audit trail |
| Brand | ATI |
|---|---|
| Model | WIND |
| Category | Wafer Defect Electron Beam Inspection Equipment |
| Origin | South Korea |
| Frame Material | Hairline Stainless Steel with White Powder Coating |
| Dimensions (W×D×H) | 1900 mm × 1680 mm × 2100 mm |
| Weight | 3.5 tons |
| Wafer Compatibility | 200 mm & 300 mm bare wafers |
| Load Port Support | FOUP, open cassette, ring cassettes (8″, 12″) |
| Alignment | Dual-wafer-size auto-alignment (200/300 mm bare |
| Automation Interface | SECS/GEM compliant, SEMI E84 standard |
| Vision System | Dual-optic 2D/3D module with real-time auto-focus |
| Inspection Modes | Normal/sawing inspection, bump inspection, edge/kerf measurement, 3D bump height/warpage/coplanarity/thickness/BLT metrology |
| Algorithm | Die-to-Die (D2D) registration using optimal die selection from adjacent four dies |
| Optional Module | IR imaging for subsurface crack and silicon bulk defect detection |
| Compliance | Fully aligned with SEMI standards |
| Brand | ATI |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Instrument |
| Model | WIS-1000 |
| Instrument Type | Optical Patterned Wafer Defect Inspection System |
| Target Applications | Semiconductor Front-End Process Monitoring |
| Process Node Support | Sub-28 nm FinFET and FD-SOI Technologies |
| Compatible Wafer Sizes | 200 mm and 300 mm |
| Throughput | Up to 120 wafers per hour (depending on inspection recipe and defect density) |
| Optical Resolution | ≤ 150 nm (at λ = 405 nm, high-NA dark-field imaging) |
| Defect Detection Sensitivity | ≥ 95% for ≥ 80 nm particles and ≥ 120 nm pattern bridging/bridging defects on metal and dielectric layers |
| Compliance | ISO 9001-certified manufacturing |
| Brand | Atometrics |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM Manufacturer |
| Regional Classification | Domestic (China) |
| Model | AM-7000 Series ER-230 |
| Pricing | Upon Request |
| Brand | Atometrics |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM Manufacturer |
| Regional Classification | Domestic (China) |
| Model | T100 |
| Pricing | Upon Request |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | NS200 |
| Price | USD 84,000 (FOB Shenzhen) |
| Measurement Principle | Contact-mode stylus profilometry with LVDC capacitive transduction |
| Vertical Resolution | Sub-ångström (≤0.1 Å) |
| Lateral Scan Range | 55 mm |
| X/Y Stage Travel | 150 mm × 150 mm (motorized) |
| R-θ Stage | 360° continuous motorized rotation |
| Max Sample Thickness | 50 mm |
| Wafer Compatibility | 150 mm (6″) and 200 mm (8″) |
| Vertical Measurement Range | Up to 1000 µm |
| Force Control | 1–50 mg adjustable, electromagnetic micro-force actuation |
| Probe Tip Radius | 2 µm diamond |
| Optical Navigation | 5 MP color camera with real-time probe trajectory overlay |
| SPC Module | Integrated statistical process control with trend charts, Cp/Cpk, histogram, and outlier detection |
| Environmental Requirements | 16–25 °C (ΔT < 2 °C/h), 30–40% RH (non-condensing), floor vibration ≤ 6.35 µm/s (1–100 Hz), ambient noise ≤ 80 dB, laminar airflow ≤ 0.508 m/s downward |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | WD4000 |
| Price | USD 420,000 (FOB Shenzhen) |
| Thickness Range | 150 µm – 2000 µm |
| TTV/Bow/Warp Measurement Accuracy | ±0.1 µm (typical, calibrated per ISO 21287) |
| Z-Axis Resolution (Interferometry) | ≤ 0.1 nm |
| Lateral Scan Area | 400 mm × 400 mm |
| Vertical Travel | 75 mm |
| Maximum Wafer Size | 300 mm (12″) |
| Surface Reflectivity Range | 0.05% – 100% |
| Roughness RMS Repeatability | ≤ 0.005 nm (ISO 25178-6 compliant) |
| Interferometric Objective Options | 2.5×, 5×, 10×, 20×, 50× |
| Spectral Confocal Thickness Sensor | Dual-beam, high-stability SLED source, 90 µm measurement range (n = 1.5), minimum detectable thickness: 0.4 µm |
| Infrared Interferometry Module | SLED source, 37–1850 µm range |
| Scan Modes | Full-map, cross (‘X’), star (‘+’), user-defined multi-point |
| Compliance | ISO 5725 (accuracy & precision), ISO 25178-2 (areal texture), ISO 10110-7 (optical surface form), SEMI D39 (wafer geometry), ASTM F39 (silicon wafer bow/warp) |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Model | WD4000 |
| Thickness Range | 150 µm – 2000 µm |
| 3D Surface Topography Resolution (Z) | ≤ 0.1 nm |
| Roughness RMS Repeatability | ±0.005 nm |
| Supported Wafer Sizes | 4″, 6″, 8″, 12″ |
| Optical Principle | Spectral Confocal Dual-Side Scanning + White-Light Interferometry (WLI) |
| Max XY Travel | 400 mm × 400 mm |
| Z Travel | 75 mm |
| Scan Modes | Full-map, Cross (‘+’), Custom Multi-point |
| Interferometric Objective Options | 2.5×, 5×, 10×, 20×, 50× |
| Reflectivity Range | 0.05% – 100% |
| Film Thickness Range (IR Interferometry) | 37 µm – 1850 µm (n ≈ 1.5) |
| Minimum Detectable Film Thickness | 0.4 µm |
| Vacuum Chuck | ESD-Safe Perforated Ceramic Vacuum Stage |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Model | WD4000 |
| Measurement Principles | Spectral Confocal Reflectometry (thickness), White-Light Interferometry (3D topography) |
| Wafer Compatibility | 4″–12″ |
| Max. Scan Area | 400 mm × 400 mm |
| Z-Axis Resolution | ≤ 0.1 nm |
| Thickness Range | 150 µm – 2000 µm |
| Surface Reflectivity Range | 0.05% – 100% |
| Roughness RMS Repeatability | ±0.005 nm |
| Motion Stage | Granite-based龙门 with AC servo direct-drive & 0.1 µm encoder resolution |
| Environmental Isolation | Active vibration damping for sub-nm stability |
| Brand | ZENO |
|---|---|
| Model | E100 |
| Type | Spectroscopic Ellipsometer |
| Form Factor | Benchtop |
| Measurement Principle | Null- and Rotating-Analyzer-Based Spectroscopic Ellipsometry (SE) |
| Wavelength Range | 240–1700 nm (configurable UV-VIS-NIR) |
| Spot Size | Standard 3 mm Ø |
| Substrate Compatibility | 4″ to 12″ wafers, irregular shapes, rigid/flexible substrates |
| Measured Parameters | Film thickness (sub-nm resolution), complex refractive index (n + ik), extinction coefficient (k), interfacial roughness, optical bandgap |
| Precision | ≤0.01 nm RMS repeatability on SiO₂/Si reference samples (t < 30 nm, n=30 measurements) |
| Compliance | ASTM F1599, ISO 15632, SEMI MF1530 |
| Software | ZENO-EllipSuite v4.x with GLP-compliant audit trail, user role management, and 21 CFR Part 11-ready data export |
| Automation Options | Motorized XYZ stage, auto-alignment module, wafer handler integration |
| Origin | Shanghai, China |
| Distribution | Authorized Global Distributor Network |
| Brand | Endress+Hauser Metrology |
|---|---|
| Country of Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | MX 203 |
| Pricing | Upon Request |
| Wafer Diameter Range | 50 mm – 450 mm (2″ – 18″) |
| Thickness Accuracy | ±0.5 µm |
| Thickness Resolution | 50 nm |
| Thickness Measurement Range | 100 µm – 1000 µm |
| Measurement Principle | Dual-Sided Capacitive Sensing |
| Automation Level | Manual Operation |
| Compatible Substrates | Si, SiC, GaN, GaAs, InP |
| Brand | Endress+Hauser Metrology |
|---|---|
| Origin | Germany |
| Model | MX608 |
| Wafer Diameter Support | 150 mm, 200 mm, 300 mm |
| Thickness Range | 500–800 µm |
| Max Warp | 100 µm |
| Resistivity Range | 0.001–200 Ω·cm |
| Thickness Accuracy | ±0.3 µm |
| TTV Accuracy | ±0.1 µm |
| Thickness Repeatability | ±0.05 µm |
| Resistivity Accuracy | ±1% (0.001–80 Ω·cm), ±5% (200 Ω·cm) |
| Resistivity Repeatability | ±0.2% (0.001–80 Ω·cm), ±2% (200 Ω·cm) |
| Edge Measurement Capability | up to 130 mm (150 mm wafers), up to 180 mm (200 mm wafers) |
| Single-Point Measurement Time | ~7 s |
| Full-Surface Scan (130/180 points) | ~10 s |
| Multi-Angle Radial Scan (18 scans @ 10° intervals) | ~3 min |
| Carrier Type Detection | P/N identification via Surface Photovoltage (SPV) |
| Brand | Filmetrics |
|---|---|
| Origin | USA |
| Model | R50 |
| Measurement Principle | Contact Four-Point Probe (4PP) & Non-Contact Eddy Current (EC) |
| Max Sample Diameter | 300 mm |
| Max Mapping Area | 200 mm × 200 mm |
| XY Stage Travel Options | 100 mm × 100 mm or 200 mm × 200 mm (R50-200) |
| Z-Travel | 100 mm |
| Tilt Stage Range | ±5° |
| Mapping Speed | Up to 1 point/sec |
| Software | RsMapper™ with Pattern Generator, GLP-Compliant Data Logging |
| Brand | KLA |
|---|---|
| Origin | USA |
| Manufacturer | KLA Corporation |
| Product Type | Imported Semiconductor Process Metrology Instrument |
| Automation Level | Fully Automated |
| Probe Configurations | Four-Point Probe (4PP) and Eddy Current (EC) |
| Maximum Sample Diameter | 200 mm (R54-200) or 300 mm (R54-300) |
| Maximum Sample Height | 15 mm |
| Sheet Resistance Range | 10⁻² to 10⁸ Ω/sq |
| Measurement Coordinate Modes | Rectangular, Linear, Polar, Custom Grid |
| XY Stage Precision | High-resolution motorized stage with ±100 mm travel (200 mm total range) |
| Enclosed Chamber | Yes, for light- and environment-sensitive samples |
| Software Platform | RSMapper™ v5.x with GLP-compliant audit trail, 21 CFR Part 11 optional modules |
| Compliance | ASTM F84, ISO 10777, SEMI MF67, USP <1054>, supports GMP/GLP documentation workflows |
| Brand | Other brands |
|---|---|
| Origin | Hong Kong |
| Manufacturer Type | General distributor |
| Domestic/Imported | Domestic |
| Model | FP NanoPrinter |
| Price Range | USD 140,000 – 700,000 |
| Key Features | DMD-based dynamic holographic patterning |
| Laser Safety Class | Class 4 |
| XY/Z Feature Size | 142 nm / 175 nm |
| Resolution (Diffraction-Limited) | 285 nm / 500 nm |
| Layer Spacing | ≥ 0.05 µm |
| Throughput | 100 mm³/hr |
| Parallel Foci | ≥ 100 |
| Surface Roughness | ≤ 20 nm |
| Operating Temp | 23 ± 1 ℃ |
| RH | < 50% (recommended < 35%) |
| Vibration Requirement | Active isolation required |
| Power Supply | 220 V, > 35 A |
| Brand | HAIDA INTERNATIONAL |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Direct Manufacturer |
| Product Category | Domestic (PRC-Made) |
| Model | HAIDA HDV-001 Membrane Mechanical Strength Tester for Battery Separators |
| Pricing | Upon Request |
| Brand | Jandel |
|---|---|
| Origin | United Kingdom |
| Model | Cartridge |
| Probe Spacing Options | 0.500 mm, 0.635 mm, 1.00 mm, 1.27 mm, 1.591 mm (±10 µm tolerance) |
| Tip Material | Tungsten Carbide (standard) |
| Tip Diameter | 0.4 mm (standard), 0.3 mm (for high-density spacing) |
| Tip Radius of Curvature | 12.5, 25, 40, 100, 150, 200, 300, or 500 µm |
| Flatness | ≥ ±0.025 mm |
| Tip Load Range | 10 g to 250 g |
| Insulation Resistance | ≥10¹³ Ω at 500 V (between adjacent probes) |
| Probe Arrangement | Linear or rectangular |
| Buffer Zone | 0.5 mm |
| Automation Level | Manual |
| Brand | k-Space |
|---|---|
| Origin | USA |
| Manufacturer Status | Authorized Distributor |
| Product Origin | Imported |
| Model | kSA 400 |
| Pricing | Upon Request |
| Brand | KLA |
|---|---|
| Origin | USA |
| Manufacturer | KLA Corporation |
| Product Type | Optical Patterned Defect Inspection System |
| Model | Candela® 6300 |
| Detection Sensitivity | Sub-0.1 Å surface roughness change |
| Spatial Bandwidth | 0.22–2000 µm |
| Measurement Modes | Radial & tangential topography profiling, roll-off analysis, texture uniformity, particle/scratch detection |
| Compliance | Designed for semiconductor and data storage manufacturing environments |
| Brand | KLA-Filmetrics |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported |
| Model | Candela® 8720 |
| Instrument Type | Optical Patterned Wafer Defect Inspection System |
| Primary Application | Automated wafer inspection with Statistical Process Control (SPC) integration |
| Wafer Diameter | 200 mm |
| Detection Principle | Multi-angle elastic and inelastic scattering imaging |
| Key Capabilities | Simultaneous dual-angle scatterometry, surface topography mapping, reflectance profiling, phase contrast imaging, and photoluminescence (PL) detection |
| Compliance | Designed for semiconductor fab environments compliant with SEMI E30 (SECS/GEM), ISO 9001, and industry-aligned GLP/GMP data integrity expectations |
| Brand | KLA |
|---|---|
| Origin | USA |
| Model | R54 |
| Automation Level | Semi-Automatic |
| Resistivity Measurement Range | 1 mΩ/□ to 200 Ω/□ |
| Resistivity Measurement Accuracy | < 0.02% |
| Z-Travel Range | 15 mm |
| XY Stage Type | Motorized |
| Max Sample Height | 15 mm |
| Max Sample Weight | 2.5 kg |
| 4PP Measurement Repeatability | < 0.02% |
| EC Measurement Repeatability | < 0.2% |
| Compatible Sample Sizes | Up to 300 mm Ø or A4 (210 × 297 mm) |
| Probe Configurations | Customizable rectangular, linear, polar, and user-defined mapping patterns |
| Dual-Mode Operation | Four-Point Probe (4PP) and Non-Contact Eddy Current (EC) |
| Brand | k-Space Associates |
|---|---|
| Origin | USA |
| Model | kSA MOS |
| Stress Measurement Range | 0.32 MPa – 7.8 GPa |
| Measurement Technology | Multi-Beam Optical Sensor (MOS) |
| Operating Temperature | Ambient to system process temperature (vacuum chamber compatible) |
| Compliance | Designed for UHV/MBE/MOCVD integration, vacuum-rated optical interface, ISO 9001-manufactured instrumentation |
| Brand | M&R |
|---|---|
| Origin | Taiwan |
| Model | AA-8N-LED |
| Light Source | UV LED |
| Maximum Substrate Size | ≤4-inch wafers (including irregular shapes) |
| Overlay Alignment Accuracy | ±1 µm |
| Optical Resolution | ≤1 µm |
| Configuration | Standalone benchtop system for contact-mode lithography and manual/semi-automated bond alignment |
| Brand | Makeway |
|---|---|
| Model | MKW-3800 |
| Origin | Shanghai, China |
| Measurement Principle | Non-contact structured light reflectometry |
| Sample Diameter | 2–8 inch wafers |
| Sampling Interval | down to 0.1 mm (full-field uniform sampling) |
| Measurement Time | <30 s (for 6-inch wafer, full aperture) |
| Warpage Range | 0.5–5000 µm |
| Warpage Repeatability | ±0.2 µm or ±1% |
| Warpage Accuracy | ±0.5 µm or ±1.5% |
| Stress Range | 1–10,000 MPa |
| Curvature Radius Range | 0.5–10,000 m |
| Curvature Repeatability | <1% (1σ @ 25 m radius) |
| Stress Repeatability | ±1.5 MPa or ±1% |
| Compatible Substrates | Si, GaAs, LiTaO₃, glass, sapphire, InP, SiC, GaN, bonded wafers, patterned wafers, square optical substrates |
| Compatible Films | Si, SiO₂, SiNₓ, Al₂O₃, TiO₂, photoresist, metal films, adhesives, nano-polymeric films, hybrid organic/inorganic films |
| Software | Stress Mapper (real-time acquisition, Stoney equation-based stress calculation, polynomial fitting, spatial filtering, ROI analysis, time-resolved & temperature-dependent stress profiling) |
| Brand | Makeway |
|---|---|
| Model | MKW-2800 |
| Measurement Principle | 3ω Method |
| Temperature Control Range | Ambient to 200 °C (typical for thin-film thermal characterization) |
| Electrical Excitation Frequency | 1–10 Hz (optimized for 3ω harmonic detection) |
| Thermal Conductivity Range | 0.1–500 W/(m·K) |
| Resolution | <±2% (relative, under controlled lab conditions) |
| Compliance | ASTM E1461, ISO 22007-4, USP <1031> (thermal property validation) |
| Software Interface | Windows-based with real-time data acquisition, harmonic phase analysis, and temperature-swept conductivity mapping |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Model | IR-M (Infrared Microscope) |
| Optical Magnification Options | 2.5×, 5×, 10× |
| Wafer Compatibility | 100 mm (4″), 150 mm (6″), 200 mm (8″) |
| Spatial Resolution | ≤3 µm (at 5× objective, transmission mode) |
| Detection Sensitivity | Defects ≥3 µm resolvable in Si wafers under IR transmission |
| Illumination Modes | Top-side visible illumination (reflected mode) + Through-wafer infrared illumination (transmission mode) |
| Imaging Sensor | IR-sensitive CMOS camera with USB 3.0 interface |
| Stage | Manual or motorized XY stage (Ø ≤200 mm wafer support) |
| Application Domain | Silicon IC & MEMS wafer-level defect inspection, SOI layer visualization, buried structure analysis |
| Brand | Netzsch |
|---|---|
| Origin | Germany |
| Model | DSC 214 Polyma |
| Temperature Range | −100 °C to 600 °C |
| Heating/Cooling Rate | up to 500 °C/min |
| Sensor Type | Corona® high-reproducibility heat-flux sensor |
| Crucible System | Concavus® concave-bottom crucibles with fixed annular contact geometry |
| Software Platform | Proteus® with Smart Mode, Expert Mode, TM-DSC, Beflat® baseline correction, Auto-Analysis, Identify™ polymer recognition database |
| Compliance | ISO 11357-1, ASTM E794, ASTM E1356, USP <1151>, GLP/GMP-ready audit trail (FDA 21 CFR Part 11 optional) |