Innolume GaAs-Based Single-Mode Laser Diodes
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model Series | GaAs |
| Core Component | Semiconductor Laser Diode Chips & Modules |
| Typical CW Output Power | 250–500 mW (wavelength-dependent) |
| Wavelength Range | 900–1340 nm |
| Beam Divergence (FAFF) | 20°–32° (full angle, fast axis) |
Overview
Innolume single-mode laser diodes are high-performance semiconductor light sources engineered for precision applications in fiber laser pumping, optical communications, LiDAR systems, biomedical instrumentation, and fundamental photonics research. Built upon Innolume’s proprietary InAs quantum dot (QD) technology integrated into a gallium arsenide (GaAs) material platform, these laser diodes deliver exceptional wavelength stability, narrow spectral linewidth, and high spatial coherence. Unlike conventional quantum well devices, the InAs QD active region enables superior temperature insensitivity, reduced threshold current, and enhanced reliability under continuous-wave (CW) operation. These diodes operate across an unusually broad near-infrared spectrum—from 900 nm to 1340 nm—enabling flexible integration into multi-wavelength pump architectures and tunable source platforms. Each device is fabricated using epitaxial growth and wafer-level processing compliant with ISO 9001-certified cleanroom protocols, ensuring batch-to-batch reproducibility and long-term operational integrity.
Key Features
- Monolithic GaAs-based semiconductor laser chips incorporating InAs quantum dot active layers
- Single transverse mode (TEM00) output with high beam quality (M² < 1.1 typical)
- Wavelength coverage spanning 900 nm to 1340 nm in discrete, factory-calibrated options
- Continuous-wave (CW) output power up to 500 mW at selected wavelengths (e.g., 1010–1124 nm); 250–300 mW at extended wavelengths (≥1130 nm)
- Fast-axis full-angle divergence (FAFF) of 20°–32°, optimized for efficient coupling into single-mode fibers and tapered amplifiers
- Hermetically sealed TO-can or butterfly packages with integrated thermistor and monitor photodiode (optional)
- Compliant with RoHS 2011/65/EU and REACH (EC) No. 1907/2006 directives
Sample Compatibility & Compliance
Innolume laser diodes are designed for direct integration into OEM modules—including seed sources for MOPA fiber lasers, gain media pump stages, and free-space optical test benches. Their low-noise, single-longitudinal-mode (SLM) emission supports applications requiring high signal-to-noise ratio (SNR), such as coherent detection, swept-source OCT, and atomic spectroscopy. Devices meet key industry compliance benchmarks: IEC 60825-1:2014 (laser safety classification Class 3B or 4 depending on configuration), EN 61326-1:2013 (EMC for laboratory equipment), and MIL-STD-883H (mechanical shock and thermal cycling qualification). Traceability documentation—including wafer lot IDs, spectral characterization reports, and aging test data—is provided per shipment to support GLP/GMP-aligned quality management systems.
Software & Data Management
While Innolume laser diodes operate as analog-driven components, they are fully compatible with standard laser driver platforms (e.g., ILX Lightwave LDC-3900, Wavelength Electronics QCL series) supporting analog modulation, TTL blanking, and temperature setpoint control via PID loops. For system-level validation, Innolume provides comprehensive datasheets with spectral power distribution (SPD), far-field intensity profiles, and L-I-V (light-current-voltage) curves measured at 25°C ambient. All performance data is traceable to NIST-traceable optical power meters (e.g., Thorlabs S142C) and calibrated OSA units (Yokogawa AQ6370D). Customers integrating these diodes into regulated environments (e.g., medical laser subsystems or telecom transceivers) may request audit-ready calibration certificates and 21 CFR Part 11-compliant electronic records upon order placement.
Applications
- Fiber laser seed sources for industrial and ultrafast amplifiers (e.g., Yb-doped, Er-doped, and Tm-doped systems)
- High-speed optical interconnects in datacom and telecom transceivers (100G–800G PAM4)
- Time-of-flight (ToF) and frequency-modulated continuous-wave (FMCW) LiDAR transmitters
- Biophotonics tools including flow cytometry excitation, confocal microscopy illumination, and photoacoustic imaging
- Gas sensing platforms targeting absorption lines of CH₄, CO₂, NH₃, and H₂O in the 1.1–1.3 µm band
- Atomic physics experiments requiring narrow-linewidth (<1 MHz) seeding of external cavity diode lasers (ECDLs)
FAQ
What is the typical spectral linewidth of Innolume GaAs-based laser diodes?
Free-running linewidths range from 1–5 MHz (FWHM), depending on operating current and heat-sink temperature. With external grating feedback, sub-100 kHz linewidths are achievable.
Are these laser diodes qualified for use in medical devices?
Yes—devices configured in hermetic butterfly packages with integrated monitoring photodiodes and thermistors comply with IEC 60601-2-22 requirements when embedded in certified host systems.
Do you provide wavelength binning and power sorting data?
All production wafers undergo full spectral and photometric screening; customers receive wafer maps and parametric yield reports prior to shipment.
Can these diodes be operated in pulsed mode?
Yes—pulse widths down to 10 ns are supported with appropriate driver circuitry; however, peak power must remain within absolute maximum ratings to avoid facet damage.
Is there a minimum order quantity (MOQ) for custom wavelength configurations?
Standard wavelengths are available off-the-shelf; non-standard wavelengths (±1 nm tolerance) require a minimum wafer run commitment of 100 chips.

