KRI Kaufman Ion Source KDC 40

Overview

The KRI Kaufman Ion Source KDC 40 is a compact, high-reliability direct-current (DC) magnetically confined ion source engineered for precision surface engineering and thin-film process integration in ultra-high vacuum (UHV) and high-vacuum environments. Based on the proven Kaufman-type discharge architecture—first developed by Dr. R. L. Kaufman at NASA’s Jet Propulsion Laboratory—the KDC 40 utilizes a thermionic cathode, cylindrical anode, and electrostatic multi-grid extraction system to generate a stable, collimated beam of inert or reactive ions. Its upgraded 4 cm diameter grid assembly improves beam uniformity and current density over legacy 3 cm designs, while the optional third-grid configuration enables enhanced angular control and reduced charge buildup on insulating substrates. The source operates with standard industrial feed gases (Ar, O₂, N₂, Xe) and supports both physical sputtering and chemically assisted processes without requiring RF or microwave excitation.

Key Features

• Optimized 4 cm aperture tri-grid extraction system with self-aligning third-grid option for improved beam focus and reduced divergence
• DC-powered magnetic confinement design ensuring stable plasma ignition and long filament lifetime (tungsten or LFN-1000 cathodes supported)
• Adjustable ion energy range from 100 eV to 1200 eV with fine resolution via independent anode and accelerator grid bias control
• Maximum continuous ion current exceeding 120 mA under argon at 800 eV—enabling high-rate pre-cleaning and ion-assisted deposition (IAD)
• Integrated thermionic neutralizer with Sidewinder or LFN-1000 filament options, maintaining space-charge compensation across full operating range
• Modular mechanical interface: Standard CF-63 (2.5″) or CF-100 (4″) conflat flange mounting; configurable tilt mount available for oblique-angle irradiation
• Multi-gas inlet manifold support (up to four independently controlled gas lines) for reactive ion etching (RIE), oxidation, nitridation, and hybrid process sequences

Sample Compatibility & Compliance

The KDC 40 is compatible with conductive, semiconductive, and dielectric substrates—including Si wafers, optical glasses (BK7, fused silica), metal foils (Al, Ti, Ni), and polymer films (PET, PI)—without requiring substrate biasing. Its low-energy ion capability (≥100 eV) minimizes lattice damage during surface activation, while higher energies (≥500 eV) support efficient sputter cleaning and atomic-layer etching. The source meets mechanical and electrical interface requirements for integration into ISO-KF, CF, and DN63 vacuum systems compliant with ISO 286-2 (geometric tolerances) and IEEE Std 1643 (vacuum system safety). While not certified as standalone medical or aerospace hardware, its construction and documentation align with GLP-aligned lab practices and support traceable process validation under ASTM F2625 (standard guide for ion beam processing of materials) and ISO 10074 (surface treatment by ion beams).

Software & Data Management

The KDC 40 operates via analog voltage inputs (0–10 V) for real-time control of discharge current, anode voltage, accelerator voltage, and neutralizer emission. When integrated with KRI’s KSC-1202 power supply controller—or third-party PLC/DAQ systems (e.g., National Instruments PXI, Beckhoff CX series)—it supports closed-loop operation with digital I/O feedback for interlock monitoring (vacuum status, cooling flow, overtemperature). Process recipes can be archived and recalled using vendor-supplied LabVIEW-based front panels or custom SCADA interfaces. All operational parameters—including grid voltages, emission current, and gas flow setpoints—are logged with timestamped metadata, enabling full audit trails required for ISO 9001 quality records and FDA 21 CFR Part 11–compliant environments when paired with electronic signature-capable software layers.

Applications

• Ion beam assisted deposition (IBAD) for enhanced adhesion and densification of optical coatings (TiO₂, SiO₂, Ta₂O₅) on lenses and laser mirrors
• In-situ substrate pre-cleaning prior to e-beam evaporation or sputtering—removing hydrocarbons and native oxides without particle generation
• Controlled surface activation of polymers and composites for improved paint or adhesive bonding strength
• Low-damage ion beam etching (IBE) of multilayer stacks (e.g., AlGaN/GaN HEMT structures) with sub-5 nm depth resolution
• Reactive ion beam sputtering (RIBS) using O₂/N₂ mixtures for stoichiometric oxide/nitride film growth (e.g., ITO, AlN)
• Ion beam mixing for interface engineering in metal–dielectric heterostructures used in MEMS and photonic devices

FAQ

What vacuum level is required for stable KDC 40 operation?
Stable operation requires a base pressure ≤1×10⁻⁷ Torr (≤1.3×10⁻⁵ Pa) with ≤5×10⁻⁶ Torr during gas flow; differential pumping may be needed for high-throughput reactive processes.
Can the KDC 40 be used with oxygen without filament oxidation?
Yes—when operated below 300 eV and with optimized gas flow sequencing, tungsten filaments exhibit acceptable lifetime; LFN-1000 lanthanum hexaboride cathodes are recommended for extended O₂ duty cycles.
Is remote computer control supported out of the box?
Analog control is standard; digital communication (RS-232, Ethernet/IP) requires the optional KSC-1202 controller or integration via third-party DAQ hardware.
What is the typical beam half-angle divergence?
Measured divergence is ≤±3.5° full angle under nominal 800 eV / 100 mA conditions, verified via Faraday cup mapping per ASTM E1316 Annex A4.
Does KRI provide installation and commissioning support?
KRI offers remote technical guidance and application-specific startup protocols; on-site support is coordinated through authorized regional partners under service agreement terms.