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Plassys SSDR 400 Microwave Plasma Chemical Vapor Deposition System

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Brand Axic
Origin France
Manufacturer Type Authorized Distributor
Origin Category Imported
Model SSDR400
Heating Method Hot-Wall
Application Field Semiconductor & Advanced Materials
Deposition Rate 1 µm/h (typical for diamond)
Base Vacuum 1×10⁻⁶ mbar
Operating Pressure 2–200 mbar
Chamber Internal Diameter 6 inch (Ø152 mm)
Substrate Stage Ø158 mm with Z-axis motion
Microwave Frequency 915 MHz
Max Microwave Power 36 kW
Process Duration Capability Up to 500 h (continuous)

Overview

The Plassys SSDR 400 is a high-performance, industrial-grade Microwave Plasma Chemical Vapor Deposition (MPCVD) system engineered for the scalable and reproducible synthesis of high-purity and ultra-high-purity synthetic diamond films and gem-quality single-crystal diamonds. Unlike conventional thermal CVD reactors, the SSDR 400 employs a 915 MHz microwave cavity coupled with a high-power (up to 36 kW) magnetron source to generate a stable, spatially uniform, and high-energy-density plasma zone above the substrate. This configuration enables efficient dissociation of hydrocarbon precursors (e.g., CH₄/H₂ mixtures) at relatively low gas-phase temperatures while maintaining precise control over radical fluxes—critical for defect-suppressed diamond nucleation and epitaxial growth. Designed specifically for semiconductor-grade diamond applications—including electronic heat spreaders, radiation-hardened sensors, quantum NV-center platforms, and optical windows—the SSDR 400 integrates hot-wall heating architecture to ensure radial and axial thermal homogeneity across the full Ø158 mm substrate stage.

Key Features

  • 915 MHz microwave excitation with fully integrated 36 kW RF generator and impedance-matching network for stable plasma ignition and long-term operation
  • Hot-wall heated vacuum chamber (6-inch internal diameter) constructed from high-purity stainless steel with water-cooled outer jacket and double-layer insulation
  • Motorized Z-axis stage positioning (±10 mm travel, ±5 µm repeatability) enabling dynamic optimization of plasma–substrate coupling during growth
  • Base pressure <1×10⁻⁶ mbar achieved via turbomolecular pumping backed by dry scroll pump; compatible with residual gas analyzers (RGA) for in-situ process diagnostics
  • Operational pressure range: 2–200 mbar, supporting both low-pressure diamond nucleation and high-pressure single-crystal growth regimes
  • Integrated thermocouple-based temperature monitoring (up to 1200 °C) with closed-loop PID control on the substrate holder surface
  • Modular gas delivery system with mass flow controllers (MFCs) for CH₄, H₂, N₂, O₂, and Ar, supporting multi-step recipes and dopant incorporation (e.g., B, P, Si)

Sample Compatibility & Compliance

The SSDR 400 accommodates substrates up to Ø158 mm, including silicon, iridium, molybdenum, and conductive diamond-seeded plates. Its mechanical and thermal design complies with ISO 27423 (vacuum equipment safety), EN 61000-6-3 (EMC emissions), and EN 61000-6-4 (industrial immunity). The system supports GLP-compliant operation when configured with audit-trail-enabled software and calibrated sensor logs. All wetted materials meet ASTM F519 standards for ultra-high-purity semiconductor processing environments. Optional integration with ISO Class 5 cleanroom-compatible load-lock modules is available for contamination-sensitive diamond electronics fabrication.

Software & Data Management

The SSDR 400 is operated via Plassys’ proprietary M-CONTROL™ platform—a deterministic real-time control system running on a dedicated industrial PC. It provides synchronized logging of >120 process parameters (microwave forward/reflected power, chamber pressure, gas flows, stage temperature, cooling water flow/temperature) at 10 Hz sampling rate. Data export adheres to ASTM E1447 and ISO/IEC 17025 traceability requirements, with optional 21 CFR Part 11 compliance packages including electronic signatures, user role management, and immutable audit trails. Recipe management supports version-controlled process templates, automated ramp/soak sequences, and interlock-driven safety protocols.

Applications

  • Growth of electronic-grade polycrystalline diamond films for high-power RF devices and thermal interface materials
  • Single-crystal diamond synthesis for quantum sensing (NV⁻ centers), high-energy particle detectors, and UV-transparent optics
  • Research-scale development of boron-doped diamond electrodes for electrochemical wastewater treatment and biosensing
  • Deposition of nanocrystalline diamond coatings on cutting tools and MEMS components requiring extreme wear resistance
  • Process qualification and transfer from R&D to pilot-line production under IATF 16949 or ISO 9001 frameworks

FAQ

What substrates are compatible with the SSDR 400?

Standard configurations support silicon, Mo, Ir, and diamond-on-diamond heteroepitaxy; custom holders for SiC or sapphire are available upon request.
Can the system be upgraded for in-situ optical monitoring?

Yes—quartz viewport integration (with AR coating for 200–1100 nm) and fiber-coupled spectrometer ports are factory-installable options.
Is remote diagnostics supported?

The system includes Ethernet-based remote access with TLS-encrypted VNC and SNMP trap reporting for predictive maintenance alerts.
What level of operator training is provided?

Plassys offers a 3-day on-site commissioning and operational training program covering safety protocols, recipe development, plasma optimization, and failure mode analysis.
Does the SSDR 400 meet semiconductor fab facility requirements?

Yes—it meets SEMI S2/S8 safety guidelines, has CE/UKCA marking, and can be supplied with SECS/GEM interface for integration into factory automation systems.

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