Thin Film Growth Equipment
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| [Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | APD |
| Vacuum Chamber Dimensions | 400 × 400 × 300 mm (L×W×H) |
| Pumping System | 450 L/s Turbomolecular Pump |
| Plasma Source | Up to 3 Configurable Arc Cathodes |
| Operating Pressure Range | High Vacuum to Low-Pressure Reactive Gases (N₂, O₂, H₂, Ar) |
| Target Geometry | Cylindrical or Tubular, Ø10 mm × 17 mm |
| Target Resistivity | < 0.01 Ω·cm |
| Energy Storage Capacitance | 360 µF × 5 (Optional Expansion) |
| Pulse Frequency | 1–5 Hz |
| Discharge Voltage | 70–400 V (Max 150 V at 1800 µF) |
| Human-Machine Interface | Integrated Touchscreen Control Panel |
| Powder Collection Module (APD-P) | Ø95 mm × 30 mm Vessel, 1–50 rpm Rotation, Yield: 13–20 cm³/h (Density- and Size-Dependent) |
| Thin-Film Configuration (APD-S) | Uniform Deposition on 2-inch Substrates] |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL-3000Plus |
| Substrate Size | 4-inch (100 mm) |
| Process Temperature Range | 350–800 °C |
| Number of Precursor Lines | 6 |
| Vacuum Base Pressure | ≤5 Pa |
| Film Thickness Uniformity | ≤3% @ 100 mm |
| System Dimensions (W × H × D) | 835 × 1644 × 700 mm |
| Weight | 160 kg |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL1000 Series |
| Substrate Size | 4-inch (φ100 mm) |
| Process Temperature | Up to 350 °C |
| Precursor Channels | 2 |
| Uniformity | ≤3% (1σ, across 4-inch wafer) |
| Vacuum Base Pressure | ≤5 Pa |
| Dimensions (W×H×D) | 582 × 450 × 410 mm |
| Weight | 50 kg |
| Optional Accessories | Powder deposition stage (0–45° tilt, 5 cm³ capacity), ozone generator, N₂ purge module, glovebox integration kit, precursor heaters (up to 200 °C), dry vacuum pump, exhaust abatement unit |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Size | Ø100 mm (4-inch) |
| Process Temperature Range | 350–800 °C |
| Precursor Channels | 6 |
| Uniformity | ≤3% (at Ø100 mm) |
| Dimensions (W × H × D) | 1418 × 1728 × 840 mm |
| Weight | 200 kg |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Compatibility | Up to φ100 mm (4-inch) |
| Maximum Precursor Channels | 6 |
| Uniformity | ≤3% @ 100 mm |
| Process Temperature Range | Ambient to 800 °C (with optional heater) |
| Precursor Temperature Control | Up to 200 °C |
| Vacuum System | Dry Pump Compatible |
| Exhaust Treatment | Optional Scrubber Integration |
| Software | Touchscreen GUI with ≥30 Programmable Recipes |
| System Architecture | Integrated Mainframe and Control Enclosure |
| Brand | Ahkemi |
|---|---|
| Origin | Anhui, China |
| Model | TFE-1200-50-I-220 |
| Maximum Operating Temperature | 1150 °C (short-term), 1100 °C (rated) |
| Temperature Control Accuracy | ±1 °C |
| Heating Zone Length | 220 mm |
| Uniform Temperature Zone Length | 80 mm |
| Tube Dimensions | Φ30/50/60 × 1200 mm |
| Furnace Chamber Diameter × Height | Φ80 × 220 mm |
| RF Power Range | 5–500 W |
| RF Frequency | 13.56 MHz |
| Gas Delivery | 3-channel MFC-controlled (0–500 sccm per channel, customizable) |
| Vacuum System | Dual-stage rotary vane pump (optional diffusion or turbomolecular pump upgrade) |
| Rated Heating Power | 3 kW |
| Recommended Ramp Rate | ≤10 °C/min |
| External Dimensions | 1250 × 510 × 810 mm |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |
| Brand | Angstrom |
|---|---|
| Model | customized-23 |
| Chamber Diameter | 200 mm (quartz) |
| Maximum Substrate Diameter | 150 mm |
| Furnace | Triple-zone resistive heating |
| Uniform Temperature Zone | 150 mm |
| Max Temperature | 1000 °C |
| Pressure Control Range | 50–500 mTorr (downstream, VAT throttle butterfly valve) |
| Vacuum Pump | Ebara ESA25-D dry pump (8 CFM) |
| Application Domain | Semiconductor thin-film fabrication, MEMS, optoelectronics, graphene & CNT research |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Lines | 4–10 channels |
| Uniformity | <1.5% (RMS, Al₂O₃ on 4″ Si wafer) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Channels | 4–10 |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Uniformity | ≤1.5% (typical for AL₂O₃ on 4″ Si wafers) |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Amod |
| Base Plate Size | 500 mm × 500 mm |
| Max. Source Capacity | 8 |
| Vacuum Capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Deposition Methods | DC/RF/Pulsed DC/HIPIMS Sputtering, Thermal Evaporation, E-beam Evaporation, Reactive Sputtering, Plasma & Ion Beam Surface Treatment |
| Substrate Handling Options | Heated/Cooled Stages, Variable-Angle Rotation, Planetary Motion, Dome & Masking Fixtures, Substrate Biasing |
| Control System | Aeres™ Software with Recipe Management, Real-time Rate Monitoring, and Torque-Sensing Crucible Indexing |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Box-Type PVD Coater |
| Substrate Range | 100 mm – 1200 mm |
| PVD Process Compatibility | Thermal Evaporation, Electron Beam Evaporation, Sputtering (DC/RF/Magnetron), Pulsed Laser Deposition (PLD) |
| Vacuum Capability | Optional Ultra-High Vacuum (UHV) Configuration (≤1×10⁻⁹ Torr base pressure) |
| Application Domain | Microelectronics, Thin-Film Optics, MEMS, Quantum Devices, R&D Prototyping |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | COVAP |
| Vacuum Pumping | Turbo-molecular pump system |
| Substrate Size Range | Up to 1200 mm (customizable) |
| Deposition Technologies | DC/RF/MF/Pulsed DC sputtering, thermal evaporation (boat/wire/crucible), electron beam evaporation, reactive sputtering, ion-assisted deposition |
| Plasma & Ion Beam Sources | Integrated glow discharge plasma cleaning, broad-beam ion sources for substrate pre-treatment and film densification |
| Film Thickness Monitoring | Isolated quartz crystal microbalance (QCM) sensors with cross-source interference mitigation |
| Automation | Recipe-driven multi-layer deposition control (sequential or co-deposition), programmable substrate rotation/tilt/heating |
| Integration Readiness | Glovebox-compatible design, modular chamber architecture |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | Angstrom |
|---|---|
| Origin | Canada |
| Model | EvoVac |
| Chamber Dimensions | 500 mm × 700 mm substrate stage |
| Vacuum capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Source options | RF sputtering, DC sputtering, Pulsed DC sputtering, HIPIMS, reactive sputtering |
| Cathode configurations | circular, linear, and cylindrical |
| Application domain | microelectronics |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Nexdep |
| Substrate Size | 6-inch (150 mm) |
| Chamber Dimensions | 400 × 400 × 500 mm (L×W×H) |
| Base Pressure | <5 × 10⁻⁷ Torr |
| Vacuum Gauging | Inficon MPG400 (3.75 × 10⁻⁹–760 Torr) |
| Roughing Pump | Oil-sealed rotary vane pump, ≥9 cfm |
| High-Vacuum Pump | Turbomolecular pump, ≥685 L/s |
| Evaporation Source | Resistive-heated metal source, 2.5 kW max power, SCR-controlled |
| Thickness Monitor | Water-cooled quartz crystal microbalance (QCM) probe with rigid mounting |
| Sample Stage | Motorized rotation (10–30 rpm), tilt-free horizontal design, shutter-integrated |
| Chamber Sealing | Dual O-ring sealed front sliding door and rear hinged door with integrated anti-coating viewport |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Model | Angstrom Dep II |
| Substrate Size | 4", 6", 8", or 12" wafers |
| Process Temperature Range | 25–400 °C (optional extended range available) |
| Precursor Channels | 4 standard (upgradable to 6) |
| Uniformity | < 1% (1σ, across full wafer) |
| Footprint | 950 mm × 700 mm (W × D) |
| Cleanroom Compatibility | ISO Class 5 (Class 100) compliant |
| Deposition Modes | Thermal ALD, Plasma-Enhanced ALD (PE-ALD), and Powder ALD capable |
| Weight | Configurable (typical system: ~350 kg) |
| Brand | Anric |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT |
| Substrate Size | 4–6 inch |
| Process Temperature Range | RT to 350 °C |
| Precursor Channels | 5 |
| Weight | 50–70 kg |
| Dimensions (W × H × D) | 50 cm × 75 cm × 75 cm |
| Thickness Uniformity | ±1% |
| Brand | Anric |
|---|---|
| Model | AT |
| Type | Desktop Atomic Layer Deposition (ALD) System |
| Origin | USA |
| Chamber Temperature Range | RT–350 °C |
| Precursor Source Temperature Range | RT–150 °C |
| Process Pressure Range | 0.1–1.5 Torr |
| Maximum Precursor Sources | 5 |
| Substrate Compatibility | Up to 4″ wafers (expandable to 6″) |
| Cycle Time | 6–10 cycles per minute |
| Control Interface | Touchscreen PLC |
| Chamber Architecture | Compact, R&D-Optimized |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT200M |
| Pricing | Upon Request |
| Footprint | 14 in × 15 in × 14.5 in (35.5 cm × 38.1 cm × 36.5 cm) |
| Chamber Volume | ~15 in³ (38.1 cm³) |
| Substrate Capacity | Up to four 2-inch wafers (square or circular) |
| Precursor Ports | Standard 2-port (1 precursor + 1 reactant) |
| Precursor Temp Range | RT to 180 °C ±2 °C (heated jacket) |
| Chamber Temp Range | RT to 300 °C ±1 °C (optional chuck heating to 450 °C+) |
| Plasma Source Option | 13.56 MHz, 80 W hollow cathode plasma (AT200M Plus) |
| Control Interface | 5-inch PLC-driven touchscreen HMI (Windows Ethernet remote access enabled) |
| Materials | Semiconductor-grade stainless steel chamber with metal-sealed fittings, heated manifolds, ultra-fast ALD valves with integrated inert gas purge (UHP N₂ >99.9995%) |
| Compliance | Cleanroom-compatible design |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT410 |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT610 |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT650/850P |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT650/850T |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT810 |
| Pricing | Upon Request |