Thin Film Growth Equipment
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| Brand | Microphase |
|---|---|
| Origin | Japan |
| Model | MPCVD-50 |
| Heating Method | Hot-Wall |
| Base Vacuum | 10 Pa |
| Operating Pressure Range | Adjustable from atmospheric to low vacuum (10–10⁵ Pa) |
| Maximum Temperature | 1200 °C |
| Quartz Tube Dimensions | Ø50 mm / Ø70–110 mm × 1000 mm |
| Substrate Size Range | 60 mm × 60 mm to 120 mm × 120 mm |
| Precursor Gases | H₂, N₂, CH₄, C₂H₅OH (ethanol) |
| Deposited Materials | Vertically aligned CNT arrays, CNT powders, freestanding CNT films, and patterned CNT structures |
| Gas Control | Triple-channel mass flow controllers (MFCs) for inert, hydrocarbon, and reducing gases |
| Ethanol Delivery | Precision syringe pump with gravimetric calibration |
| Compliance | Designed for ISO/IEC 17025-compliant lab environments |
| Brand | Microphase |
|---|---|
| Origin | Japan |
| Model | MPCVD-Graphene |
| Heating Method | Hot-Wall |
| Deposition Gases | C₂H₂, C₂H₄, or CH₄ |
| Deposited Materials | Graphene Films, Carbon Nanotubes |
| Base Vacuum | Adjustable |
| Operating Pressure | MFC-Controlled |
| Quartz Tube Dimensions | OD 50 mm × ID 46 mm × L 1200 mm |
| Heating Zone | Ø60 mm × L260 mm |
| Max Temperature | 1200 °C |
| Usable Temp Range | 400–1100 °C |
| Temperature Control | Programmable PID |
| Gas Channels | 3 (hydrocarbon, H₂, Ar) |
| Vacuum Pump | Rotary Vane, 20 L/min |
| Sample Temperature Monitoring | Direct Thermocouple |
| Cooling Mechanism | Manual 300 mm Sliding Furnace |
| Overall Dimensions | W1400 × H1000 × D500 mm |
| Brand | Moorefield |
|---|---|
| Origin | United Kingdom |
| Heating Method | Cold-Wall Design |
| Base Pressure | 5×10⁻⁷ mbar |
| Substrate Dimensions | 20 × 40 mm² |
| Maximum Temperature | 1100 °C |
| Growth Time | <30 min |
| Process Gases | Ar, H₂, CH₄ |
| Mass Flow Controllers (MFCs) | Integrated for Precise Gas Delivery |
| Plasma Option | Optional RF Source (150 W, 13.56 MHz) for oCVD-WPG Variant |
| Compliance | Compatible with ISO Class 5 Cleanroom Environments |
| Safety Features | Exhaust Dilution Module, Vacuum Interlock, Thermal Shutdown |
| Brand | Moorfield |
|---|---|
| Origin | UK |
| Model | MiniLab |
| Vacuum Base Pressure | 5×10⁻⁷ mbar |
| Maximum Substrate Diameter | 11 inches |
| Deposition Techniques | Thermal Evaporation, Low-Temperature Organic Evaporation, Magnetron Sputtering, Electron Beam Evaporation |
| Chamber Configurations | Front-Loading Box, Top-Hinged Bell Jar, Glovebox-Compatible Dual-Door, Tall-Aspect-Ratio Vertical |
| Compliance | ISO 9001–Certified Manufacturing, GLP-Ready Architecture, FDA 21 CFR Part 11–Compatible Software Options Available |
| Brand | Moorfield |
|---|---|
| Origin | UK |
| Model | oPVD S10A, oPVD S10A-WA, oPVD T15A |
| Vacuum Base Pressure | <5×10⁻⁷ mbar |
| Substrate Size | up to 8 inches (S10A-WA), up to 4 inches (S10A & T15A) |
| Substrate Heating | up to 500 °C |
| Target Compatibility | 2-inch water-cooled magnetron sputtering targets (S10A/S10A-WA) |
| Gas Control | up to 3 MFC-controlled process gases (Ar, O₂, N₂) |
| Deposition Modes | DC/RF magnetron sputtering, reactive sputtering, co-sputtering, resistive/low-temperature organic evaporation |
| Film Uniformity | high across full substrate area |
| Cleanroom-Compatible Design | yes |
| Software | integrated touchscreen HMI with programmable recipes, audit-trail-capable control logic |
| Brand | MVSystems |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MVS |
| Pricing | Available Upon Request |
| Brand | Nano-Master |
|---|---|
| Origin | USA |
| Manufacturer | Nano-Master, Inc. |
| Type | Magnetron Sputter Deposition System |
| Substrate Size | 6-inch (152 mm) |
| Maximum Substrate Temperature | 700 °C |
| Thickness Uniformity | <1% (1σ, across 6″ wafer) |
| Base Pressure | ≤1 × 10⁻⁷ Torr |
| Pumping Speed | 260 L/s Turbo Molecular Pump (optional) |
| Power Supplies | 1 kW DC + 300–600 W RF (13.56 MHz) |
| Magnetron Configuration | Up to 3 off-axis planar magnetrons |
| Chamber | 14″ cubic aluminum vacuum chamber with viewport |
| Control Interface | LabVIEW-based PC control with multi-level password protection and full interlock safety architecture |
| Brand | NBM |
|---|---|
| Origin | USA |
| Model | Micro PLD |
| Substrate Heating Temperature | 1200 °C |
| Base Vacuum | 1×10⁻⁶ Torr |
| Substrate Diameter | 2 inch |
| Target Positions | 4 |
| Substrate Rotation Speed | 20 rpm |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 180 PED |
| Quotation | Upon Request |
| Vacuum Chamber | 18" spherical chamber with 8" CF viewport, 6.75" CF PED source port, three 6" CF ports, two additional 2.75" and 1.33" CF ports |
| Electron Gun Energy | 8–20 keV |
| Pulse Energy | 100–800 mJ |
| Pulse Width | 100 ns |
| Max Repetition Rate | 10 Hz at 15 kV, 5 Hz at 20 kV |
| Beam Cross-Section (Min) | 8 × 10⁻² cm² |
| Peak Power Density | 1.3 × 10⁸ W/cm² |
| Z-Axis Alignment Range | 50 mm |
| XY Alignment Range | ±20 mm |
| Spark Plug Lifetime | ~3 × 10⁷ pulses |
| Substrate Heater | Ø2" max / 10×10 mm² min |
| Substrate Rotation | 1–30 RPM (360° continuous) |
| Target Carousel | 6 × 1" or 3 × 2" targets |
| Target Grid Scanning | Programmable raster ablation pattern |
| Target Height Adjustment | Motorized |
| Target Shutters | Individual shutters per target to prevent cross-contamination |
| Process Gas Compatibility | O₂, N₂, Ar |
| Pulse Energy Stability | ±10% |
| Base Pressure | ≤8 × 10⁻⁸ Torr (with dry pump + turbomolecular pump) |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Ion-Assisted PLD System |
| Pricing | Upon Request |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Large-Area PLD Systems |
| Substrate Diameter | 4" (100 mm), 6" (150 mm), 8" (200 mm) |
| Chamber Type | 18-inch-diameter spherical or cylindrical vacuum chamber |
| Max. Substrate Temperature | 850 °C (for 4″), 750 °C (for 6″), 700 °C (for 8″) |
| Target Mount | 4 × 2-inch rotary target assembly |
| Thickness Uniformity | ±5% or better across full wafer |
| Process Gases | O₂, N₂, Ar with mass flow controllers (MFCs) |
| Load Lock | Integrated |
| Automation Platform | Windows 7 + LabVIEW 2013 |
| Laser Scanning | Programmable beam rastering with inverse-velocity dwell-time compensation |
| Oxygen-Compatible High-Temperature Operation | Yes |
| Brand | Neocera |
|---|---|
| Origin | Finland |
| Model | PED-120 |
| Vacuum Chamber | 12" Ø |
| Base Pressure | <1×10⁻⁶ Torr |
| Substrate Heater | 2" diameter, 950 °C max, ±1 °C stability |
| Target Capacity | six 1" or three 2" targets |
| Target-to-Substrate Distance | 4" |
| Gas Flow Control | 100 sccm MFC (O₂-compatible) |
| Turbo Pump | 260 L/s with cryo-trap |
| Roughing Pump | 4 m³/hr oil-free rotary vane |
| Electron Source | PEBS-20, 8–20 kV, 0.1–0.8 J/pulse, ~100 ns pulse width, ≤15 Hz rep rate, beam spot ≥6×10⁻² cm², energy density up to 1.3×10⁸ W/cm² |
| Z-axis travel | 50 mm, XY-axis travel: ±20 mm |
| Operating Lifetime | ≥10⁷ pulses |
| Max PEBS Housing Temp | 85 °C |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Pioneer 120 Advanced PLD System |
| Substrate Heating | Up to 850°C, Radiant Heater, O₂-Compatible |
| Substrate Size | 10 mm × 10 mm to 2-inch diameter |
| Vacuum Base Pressure | ≤5×10⁻⁹ Torr |
| Chamber Diameter | 12 inches |
| Target Capacity | 6×1″ or 3×2″ targets |
| Turbo Pump Speed | 260 L/s (software-controlled) |
| In-situ Diagnostics | RHEED-compatible |
| Load Lock | Optional |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 120 PLD System |
| Substrate Heater Type | Conductive (electrical) heating stage |
| Max Substrate Temperature | 950 °C |
| Heater Compatibility | O₂-compatible up to 1 atm (760 Torr) |
| Target Changer | Motorized, programmable multi-target rotator with rastering and position indexing |
| Vacuum System | Dry-pump stack — turbomolecular pump backed by diaphragm or scroll pump |
| Deposition Chamber Ports | 8" CF for pump, 8" CF for heater, 8" CF for target assembly |
| Laser Source | KrF excimer laser (248 nm) |
| Optical Path | 45° turning mirror, plano-convex lens (f ≈ 50 cm) |
| Control Software | Windows 7 + LabVIEW 2013 (integrated real-time control of heater, target rotation, pressure regulation, pump sequencing, and laser triggering) |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 Laser MBE/PLD System |
| Substrate Heating | 1000 °C (laser heater), 850 °C (radiant heater) |
| Substrate Size | 1 cm × 1 cm (laser-heated stage), 2″ diameter (radiant-heated stage) |
| Vacuum Chamber Diameter | 18″ |
| RHEED Gun Voltage | 30 keV |
| RHEED Operating Pressure | ≤500 mTorr (O₂) |
| Gas Flow Control | O₂/N₂ up to 100 SCCM |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Target Mounting Options | 6 × 1″ or 3 × 2″ rotating target holder |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 MAPLE PLD System |
| Substrate Heating | Up to 500 °C with programmable controller |
| Substrate Size | Max. 2" diameter or multiple 1 cm × 1 cm samples |
| Substrate Rotation | 20 RPM |
| Vacuum Chamber Diameter | 18" |
| Target Stage | LN₂-cooled, single-target standard (multi-target optional) |
| Gas Flow Control | 50–100 SCCM MFC |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 PLD System |
| Vacuum Base Pressure | ≤5×10⁻⁹ Torr |
| Chamber Diameter | 18 in |
| Max Substrate Size | 6 in |
| Max Target Capacity | 6×1″ or 3×2″ |
| Substrate Heater | Radiant, O₂-compatible up to 1 atm (760 Torr) |
| Max Substrate Temperature | 850 °C (upgradable to 1000 °C) |
| Turbo Pump Speed | 400 L/s (software-controlled) |
| In-situ Diagnostics Support | RHEED, LAXS, IES |
| Load-Lock Compatible | Yes |
| Multi-Source Integration Options | PED, RF/DC Sputtering, DC Ion Gun |
| UHV Cluster Integration Ready | XPS, ARPES, MBE |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PLD |
| Pricing | Available Upon Request |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Region of Manufacture | Domestic (China) |
| Model | OTF-1200X-4-NW |
| Quotation | Upon Request |
| Main Tube | 100 mm OD × 94 mm ID × 750 mm L (Fused Quartz) |
| Max Operating Temp (Main Zone) | 1100 °C (<2 hr), 1000 °C continuous |
| Preheat Zone | 30 mm OD × 150 mm L (Stainless Steel), RT–600 °C continuous |
| Heating Zones | Main: 440 mm (100 mm isothermal) |
| Preheat | 150 mm |
| Max Ramp Rate | 20 °C/min (both zones) |
| Power Supply | 220 V AC, 50/60 Hz, single-phase |
| Max Power | 3.6 kW |
| Cooling | Water-cooled KF25 flange with integrated seal cooling |
| Gas Inlets | Four 1/8" Swagelok ports on left flange |
| Vacuum Compatibility | KF25 interface for turbomolecular or rotary vane pump |
| Control System | Dual independent PID controllers, 30-segment programmable ramp-soak profiles, K-type thermocouples, ±1 °C accuracy |
| Optional | PC-based temperature control software (USB/RS485) |
| Dimensions (closed) | 1580 × 458 × 585 mm (62" × 18" × 23") |
| (fully extended) | 2040 × 458 × 585 mm (80" × 18" × 23") |
| Weight | 110 kg |
| Warranty | 12 months parts & labor (excludes consumables: quartz tube, O-rings, heating elements) |
| Safety Certification | UL-listed electrical components (>24 V) |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | ALD OpAL |
| Substrate Size | Up to 200 mm |
| Process Temperature | Up to 200 °C |
| Precursor Sources | Up to 4 (liquid or solid) |
| Plasma-Enhanced ALD Capability | Optional, field-upgradable |
| Chamber Design | Direct-load, open-frame thermal ALD platform |
| Safety Integration | Compatible with N₂-purged gloveboxes and exhaust hoods |
| Service Support | Lifetime process support, including new recipe development and material-specific optimization guidance |
| Brand | Picosun |
|---|---|
| Origin | Finland |
| Model | P-300B |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ±1.5% (1σ, across 8″ wafer or batch load) |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | R-Series |
| Price Range | USD 135,000 – 270,000 (FOB Helsinki) |
| Substrate Size | 50–200 mm (2″–8″, 8″ available on request) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 2–6 (gas, vaporized liquid, or solid-source compatible) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 70 × 105 × 92.5 cm |
| Uniformity | < ±1% across 200 mm wafers (typical, SiO₂ on Si) |
| Brand | Picosun |
|---|---|
| Origin | Finland |
| Model | R-Series |
| Substrate Size | 200 mm (8-inch) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 6 |
| Weight | 350 kg |
| Dimensions (W × H × D) | 146 cm × 146 cm × 84 cm |
| Thickness Uniformity | ±1% |
| Reactor Materials | 316 Stainless Steel, Titanium, Nickel, Aluminum, Quartz |
| Precursor States | Gas, Liquid, Solid |
| Load Lock | Picoloader™ Manual Transfer System with Pre-Vacuum Chamber and Gate Valve |
| Vacuum Pump Capacity | 30–80 m³/h |
| Carrier Gas | ≥99.999% N₂ or Ar, min. 2 slm |
| Power Supply | 100–240 V, 50/60 Hz, 1- or 3-phase, 3.7 kW |
| Cooling | Air-cooled (no external water required) |
| Exhaust | Dedicated for pump and precursor cabinets |
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | Imported Semiconductor CVD System |
| Model | PECVD Series |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication, MEMS, III-V & Wide-Bandgap Devices (GaAs, SiC, CPV), LED, SOI, TSV |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Pressure | 1×10⁻⁶ mbar |
| Operating Pressure Range | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm, Z-axis motorized translation |
| Plasma Source | 915 MHz, up to 36 kW microwave generator |
| Process Duration Capability | Up to 500 h continuous operation |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis motion |
| Max. Continuous Process Duration | ≥3 weeks |
| Temperature Control | Precision ±1°C over full operating range |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | Qiyue Technology |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MINI-ALD4 |
| Substrate Size | Up to 100 mm (4-inch) wafers |
| Chamber Architecture | Dual-chamber (reaction + load-lock) |
| Heating System | Radiant heating with high temperature uniformity |
| Gas Delivery | Optimized laminar flow path with precursor bottle heating, heated transfer lines, and adjustable pulsing sequence |
| Optional Modules | Plasma source, powder ALD module, ozone generator |
| Film Compatibility | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), nitrides (e.g., TiN, TaN), pure metals (e.g., Pt, Ru), and doped compounds |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |