Thin Film Growth Equipment
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| Brand | Appsilon |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | MPCVD |
| Heating Method | Microwave Plasma Excitation |
| Application Domain | Semiconductor & Advanced Materials Research |
| Deposition Rate | Configurable per process recipe (typical range: 0.1–10 µm/h for diamond) |
| Process Gases | H₂, CH₄, N₂, O₂, Ar (gas mixing and mass flow control standard) |
| Deposited Films | Single-crystal & polycrystalline diamond, doped diamond (B/N/Si), diamond-like carbon (DLC), SiC, AlN |
| Base Vacuum | ≤5 × 10⁻⁷ mbar (with turbomolecular pumping system) |
| Operating Pressure Range | 10–200 mbar (microwave-coupled plasma stable across full range) |
| Chamber Internal Dimensions | Ø200 mm × 300 mm (standard configuration |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible With | In-situ metrology modules, powder deposition kits, load-lock, QCM thickness monitoring, ozone generator |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible Add-ons | In-situ ellipsometry, powder deposition module, load lock, QCM thickness monitor, ozone generator, heated sample stage (500 °C) |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | Up to 200 mm (8-inch) wafers |
| Process Temperature | 300°C aluminum alloy hot-wall chamber with convective temperature control |
| Precursor Channels | 8 independent precursor lines with CF-40 vacuum flanges |
| Chamber Dimensions (W × H × D) | 78 × 56 × 28 cm |
| Thickness Uniformity | <1% across 200 mm substrate |
| Thermal Uniformity | 99.9% |
| Maximum Sample Thickness | 32 mm |
| Plasma Option | Integrated 13.56 MHz ICP plasma source (300 W, air-cooled) |
| Mass Flow Controllers | 4 MFCs (3 for plasma gases, 1 for carrier gas) |
| Compliance | CF-40 standard vacuum interface, glovebox-compatible side-mount configuration |
| Brand | ATLANT3D |
|---|---|
| Origin | Denmark |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | NANOFABRICATOR™ LITE |
| Substrate Size | Up to 4-inch wafers |
| Process Temperature Range | 50 °C – 300 °C |
| Precursor Channels | 2 |
| Dimensions (W × H × D) | 1400 mm × 800 mm × (depth not specified) |
| Thickness Uniformity | Capable of controlled thickness gradients across substrate |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Heating Method | Hot-Wall |
| Deposition Rate | 1 nm/s (typical, process-dependent) |
| Base Vacuum | ≤1×10⁻⁶ Torr |
| Operating Pressure Range | 2–200 mTorr |
| Chamber Internal Diameter | 6-inch (152 mm) |
| Substrate Compatibility | Up to 8-inch wafers |
| Application Domain | Semiconductor Thin-Film Fabrication |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Genesis ALD |
| Substrate Width | Up to 420 mm |
| Process Temperature | Up to 250 °C |
| Precursor Channels | Configurable (standard ≥4) |
| ALD Film Thickness Range | Up to 100 nm |
| Dynamic Deposition Rate (Al₂O₃) | 10 nm·m/min |
| Uniformity | ≤±1.5% (3σ, across full web width) |
| System Footprint | Customizable per integration requirements |
| Weight | Site-specific (typically 1,200–2,500 kg) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Model | BTF-1200C-CVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5×10⁻¹ Pa |
| Operating Pressure Range | 1.01325×10⁵ to 1.33×10⁻² Pa |
| Maximum Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Tube Diameter Options | Φ25/50/60/80/100 mm × 1000 mm |
| Heating Zone Length | 440 mm |
| Uniform Temperature Zone | 200 mm |
| Control Accuracy | ±1 °C |
| Programmable Stages | 30-segment PID with Auto-Tuning |
| Mass Flow Controllers | Triple-channel, N₂-calibrated (200/500/1000 sccm), Accuracy ±1.5% F.S., Repeatability ±0.2% F.S., Response Time (Gas): 1–4 s |
| Vacuum Pump | Rotary Vane, 10 m³/h, Ultimate Vacuum 5×10⁻¹ Pa, KF25 Inlet/Outlet, Oil Capacity 1.1 L, Noise ≤50 dB(A) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | BTF-ALD-100 |
| Precursor Configuration | 2 heated metal precursor lines (up to 200 °C) + 1 H₂O precursor line |
| Sample Capacity | Up to 4-inch wafers (100 mm), fully compatible with ≤4″ substrates |
| Uniformity | < ±1% non-uniformity over 4″ Al₂O₃ film after 300 ALD cycles |
| Base Pressure | ≤5 × 10⁻⁵ Torr (with dual-stage rotary vane pump, ≥16 m³/h) |
| Temperature Control | Substrate heating up to 300 °C (±0.5 °C) |
| Vacuum Gauge | MKS digital capacitance manometer (10⁻⁵–10⁵ Torr) |
| Sealing | Perfluoroelastomer (FFKM) O-rings, leak rate < 5 × 10⁻⁷ Pa·L/s |
| MFC Accuracy | ±1% FS for two analog mass flow controllers |
| Power Supply | 380 V AC, 50–60 Hz, 5 kW |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | Micro PECVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5 × 10⁻¹ Pa |
| Operating Pressure Range | 1.01325 × 10⁵ Pa to 1.33 × 10⁻² Pa |
| RF Power Output | 0–150 W |
| RF Interface | 50 Ω, N-type female |
| Power Stability | ≤5 W |
| Harmonic Content | ≤−50 dBc |
| Max. Heating Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Effective Chamber Dimensions | Φ25 mm / Φ50 mm (Customizable Tube Diameter) |
| Chamber Material | Alumina + High-Temperature Ceramic Fiber |
| Thermocouple Type | K-type |
| Temperature Control Accuracy | ±1 °C |
| Control Mode | 30-Stage Programmable PID with Auto-Tuning |
| Heating Zone Length | 230 mm |
| Heating Element | Resistance Wire |
| Power Supply | Single-phase, 220 V, 50/60 Hz |
| Total System Power | 1 kW |
| Pumping Speed | 10 m³/h |
| Ultimate Vacuum (with Pump) | 5 × 10⁻¹ Pa |
| Vacuum Gauge Range | −0.1 to 0.15 MPa (0.01 MPa/div) |
| Mass Flow Controllers | Triple-channel, Stainless Steel Dual-Ferrule Fittings |
| Standard N₂ Flow Ranges | 200 / 500 / 1000 sccm (Customizable) |
| MFC Accuracy | ±1.5% FS |
| Linearity | ±1% FS |
| Repeatability | ±0.2% FS |
| Response Time (Gas) | 1–4 s |
| (Electrical) | 10 s |
| Working Pressure Drop | 0.1–0.5 MPa |
| Max. Inlet Pressure | 3 MPa |
| Cooling | Forced Air |
| Ambient Temp. Range | 5–45 °C |
| Relative Humidity | ≤85% RH |
| Noise Level | ≤50 dB(A) |
| Vacuum Interface | KF25 (Inlet & Exhaust) |
| Vacuum Connection | Bellows + Manual Gate Valve |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Combinatorial PLD System |
| System Type | Turnkey Pulsed Laser Deposition Platform with Continuous Composition Spread (CCS-PLD) Capability |
| Substrate Compatibility | 2-inch wafers (4-inch and 6-inch available on request) |
| Operating Environment | Up to 800 °C, up to 500 mTorr O₂ partial pressure |
| Deposition Mode | Standard PLD + CCS-PLD (Continuous Composition Spread) |
| Target Configuration | Multi-target carousel for binary/ternary/quaternary combinatorial synthesis |
| Film Architecture Support | Epitaxial thin films, multilayer heterostructures, superlattices |
| Oxygen Compatibility | Fully compatible with reactive oxygen ambient for metal oxide epitaxy |
| Post-deposition Annealing | Not required due to in-situ compositional grading and kinetic control |
| Maskless Operation | Enabled by angular deposition gradient and laser fluence modulation |
| Layer Resolution | Sub-monolayer precision per pulse cycle |
| Compliance | Designed for GLP-compliant thin-film R&D environments |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2060 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | SiF₄, CF₄, SF₆, NF₃, CO₂ |
| Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% of reading |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing | 316L stainless steel, CF-40 flange compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | ≤200 mTorr (vacuum-compatible) |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2061 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | WF₆, CF₄, SF₆, NF₃, CO₂ |
| Measurement Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output Interface | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing Material | 316L Stainless Steel |
| Process Connection | CF-35 or ISO-KF40 Flange Compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | Up to 200 mTorr (absolute) |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-CVD1200-50 |
| Heating Method | Resistive Tube Furnace (Dual Independent Zones) |
| Maximum Operating Temperature | 1100 °C |
| Vacuum Level | ≤1.0 × 10⁻³ Pa (with Molecular Pumping System) |
| Tube Dimensions | Ø50 mm × 1000 mm (quartz), optional diameters up to Ø100 mm |
| Heating Zone Configuration | 2 × 200 mm independent zones |
| Temperature Uniformity | ±5 °C over 100 mm zone length |
| Temperature Control | 50-segment programmable PID |
| Gas Channels | 3 (N₂, H₂, Ar configurable) |
| Mass Flow Accuracy | ±2.0% FS |
| Gas Inlet/Outlet Interface | 1/4″ VCR + KF16/KF25/KF40 vacuum flanges |
| Pressure Measurement Range | 10⁵ Pa to 1 × 10⁻⁵ Pa (composite gauge) |
| Power Supply | AC 220 V, 50/60 Hz |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-MSV325-II |
| Instrument Category | DC Magnetron Sputtering System |
| Application Field | Microelectronics |
| Substrate Diameter | 100 mm |
| Maximum Substrate Temperature | 500 °C |
| Base Pressure | ≤1.0 × 10⁻⁵ Pa |
| Power Supply | Dual 500 W DC |
| Target Configuration | Two Independent 1" or 2" Magnetron Sources |
| Vacuum Chamber | Ø325 mm × 500 mm, SUS304 Stainless Steel |
| Sample Stage | Ø150 mm, Heated (up to 600 °C, ±1 °C stability), Rotatable (0–20 rpm) |
| Gas Control | Standard 1-channel MFC (Ar, 200 SCCM), Optional up to 4-channel MFC |
| Vacuum Pumping | Turbo-molecular pump system (600 L/s nominal speed), Integrated solenoid-valve gas ballast for venting without pump shutdown |
| Optional In-situ Monitoring | Quartz Crystal Thickness Monitor (0.10 Å resolution) |
| Dimensions (W×D×H) | 540 × 540 × 1000 mm |
| Weight | 145 kg |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Equipment Type | DC Magnetron Sputtering Coater |
| Application Field | Microelectronics |
| Substrate Diameter | 100 mm |
| Maximum Substrate Temperature | 500 °C |
| Base Vacuum | 1.0 × 10⁻⁴ Pa |
| Chamber Material | High-Purity Fused Quartz |
| Chamber Dimensions | Ø180 mm × 200 mm |
| Observation Window | Full-360° Transparent Quartz Viewport |
| Target Size | Ø50 mm (2-inch), Thickness ≤ 3 mm |
| DC Power Supply | 300 W, Adjustable |
| Pumping Speed | Turbo Molecular Pump — 600 L/s |
| Vacuum Gauge | Composite Gauge (10⁻⁵–10⁵ Pa) |
| Sample Stage | Rotating & Heated |
| Interface | Intuitive Modular Control Panel |
| Overall Dimensions | 550 mm × 350 mm × 1200 mm |
| Total Power Consumption | 2 kW |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-PECVD100-1200 |
| RF Power Supply | 13.56 MHz ±0.005%, 0–300 W output, max reflected power 100 W, reflected power <3 W at full power, stability ±0.1% |
| Tube Material | High-purity quartz |
| Tube OD | 100 mm |
| Furnace Length | 440 mm |
| Heating Zone | Dual-zone (2 × 200 mm) |
| Max Continuous Operating Temperature | 1100 °C |
| Temperature Control Accuracy | ±1 °C |
| Temperature Program | 30-segment programmable PID via LCD touchscreen |
| Vacuum Seal | 304 stainless steel flange |
| Base Pressure | 0.1 Pa (via dual-stage rotary vane pump, 1.1 L/s) |
| Working Pressure Range | –0.15 MPa to +0.15 MPa |
| Gas Channels | 6 independent MFC-controlled lines (H₂, CH₄, C₂H₄, N₂, NH₃, Ar) |
| MFC Ranges | A–C: 0–200 SCCM |
| D–F | 0–500 SCCM |
| MFC Accuracy | ±1.5% F.S. |
| Gas Mixing Tank Volume | 1 L |
| Vacuum Interface | KF16 |
| Gas Fitting | 1/4" VCR-style compression fittings |
| Cooling | Motorized sliding furnace rail for rapid thermal quenching |
| Power Input | AC 220 V, 50 Hz |
| Brand | Forge Nano |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PROMETHEUS |
| Quotation | Upon Request |
| Substrate Capacity | 5–5000 g powder |
| Process Temperature | Up to 200 °C |
| Precursor Channels | 2–8 |
| Weight | >200 kg |
| Footprint | Floor-Standing |
| Uniformity | Conformal atomic-layer coating across entire powder surface |
| Brand | Korea Vacuum |
|---|---|
| Origin | South Korea |
| Model | PECVD/RIE |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication |
| Gas Channels | 8 (4 for PECVD, 4 for RIE) |
| Deposited Films | SiOₓ, SiNₓ |
| Base Pressure | 1×10⁻⁷ Torr |
| Operating Pressure Range (PECVD) | 1×10⁻³ Torr |
| Operating Pressure Range (RIE) | 0.02–500 mTorr |
| Maximum Substrate Size | 8-inch (200 mm) |
| RF Source Power | 600 W, 13.56 MHz |
| RF Bias Power | 300 W, 13.56 MHz |
| Platen Temperature | Up to 400 °C |
| Pumping System | 200 L/sec corrosion-resistant turbomolecular pump (Pfeiffer TPH261PC) + BOC Edwards RV12 roughing pump |
| Gas Distribution | Showerhead-type for both PECVD and RIE |
| Substrate Handling | Manual loading with pneumatic top-hinged lid |
| Vacuum Gauges | Baratron capacitance manometer (RIE), BOC Edwards wide-range gauge (PECVD & RIE) |
| MFC Count | 4 (PECVD), 3 (RIE) |
| Cooling | Water-cooled platen and electrodes |
| Control Interface | LabVIEW-based PC control with automated pressure regulation and process sequencing |
| Brand | Truth Instruments Company Limited |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (PRC) |
| Model | MBE-400 |
| Quotation | Upon Request |
| Substrate Heating | 2-inch Wafer Compatibility |
| Base Pressure | ≤1×10⁻¹⁰ mbar |
| Substrate Temperature Control | Room Temperature to 800 °C |
| Effusion Cell Sources | 6–10 Knudsen Cells |
| Brand | Nano-Master |
|---|---|
| Origin | USA |
| Manufacturer | Nano-Master, Inc. |
| Type | Magnetron Sputter Deposition System |
| Substrate Size | 6-inch (152 mm) |
| Maximum Substrate Temperature | 700 °C |
| Thickness Uniformity | <1% (1σ, across 6″ wafer) |
| Base Pressure | ≤1 × 10⁻⁷ Torr |
| Pumping Speed | 260 L/s Turbo Molecular Pump (optional) |
| Power Supplies | 1 kW DC + 300–600 W RF (13.56 MHz) |
| Magnetron Configuration | Up to 3 off-axis planar magnetrons |
| Chamber | 14″ cubic aluminum vacuum chamber with viewport |
| Control Interface | LabVIEW-based PC control with multi-level password protection and full interlock safety architecture |
| Brand | NBM |
|---|---|
| Origin | USA |
| Model | Micro PLD |
| Substrate Heating Temperature | 1200 °C |
| Base Vacuum | 1×10⁻⁶ Torr |
| Substrate Diameter | 2 inch |
| Target Positions | 4 |
| Substrate Rotation Speed | 20 rpm |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 180 PED |
| Quotation | Upon Request |
| Vacuum Chamber | 18" spherical chamber with 8" CF viewport, 6.75" CF PED source port, three 6" CF ports, two additional 2.75" and 1.33" CF ports |
| Electron Gun Energy | 8–20 keV |
| Pulse Energy | 100–800 mJ |
| Pulse Width | 100 ns |
| Max Repetition Rate | 10 Hz at 15 kV, 5 Hz at 20 kV |
| Beam Cross-Section (Min) | 8 × 10⁻² cm² |
| Peak Power Density | 1.3 × 10⁸ W/cm² |
| Z-Axis Alignment Range | 50 mm |
| XY Alignment Range | ±20 mm |
| Spark Plug Lifetime | ~3 × 10⁷ pulses |
| Substrate Heater | Ø2" max / 10×10 mm² min |
| Substrate Rotation | 1–30 RPM (360° continuous) |
| Target Carousel | 6 × 1" or 3 × 2" targets |
| Target Grid Scanning | Programmable raster ablation pattern |
| Target Height Adjustment | Motorized |
| Target Shutters | Individual shutters per target to prevent cross-contamination |
| Process Gas Compatibility | O₂, N₂, Ar |
| Pulse Energy Stability | ±10% |
| Base Pressure | ≤8 × 10⁻⁸ Torr (with dry pump + turbomolecular pump) |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Ion-Assisted PLD System |
| Pricing | Upon Request |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Large-Area PLD Systems |
| Substrate Diameter | 4" (100 mm), 6" (150 mm), 8" (200 mm) |
| Chamber Type | 18-inch-diameter spherical or cylindrical vacuum chamber |
| Max. Substrate Temperature | 850 °C (for 4″), 750 °C (for 6″), 700 °C (for 8″) |
| Target Mount | 4 × 2-inch rotary target assembly |
| Thickness Uniformity | ±5% or better across full wafer |
| Process Gases | O₂, N₂, Ar with mass flow controllers (MFCs) |
| Load Lock | Integrated |
| Automation Platform | Windows 7 + LabVIEW 2013 |
| Laser Scanning | Programmable beam rastering with inverse-velocity dwell-time compensation |
| Oxygen-Compatible High-Temperature Operation | Yes |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Pioneer 120 Advanced PLD System |
| Substrate Heating | Up to 850°C, Radiant Heater, O₂-Compatible |
| Substrate Size | 10 mm × 10 mm to 2-inch diameter |
| Vacuum Base Pressure | ≤5×10⁻⁹ Torr |
| Chamber Diameter | 12 inches |
| Target Capacity | 6×1″ or 3×2″ targets |
| Turbo Pump Speed | 260 L/s (software-controlled) |
| In-situ Diagnostics | RHEED-compatible |
| Load Lock | Optional |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 120 PLD System |
| Substrate Heater Type | Conductive (electrical) heating stage |
| Max Substrate Temperature | 950 °C |
| Heater Compatibility | O₂-compatible up to 1 atm (760 Torr) |
| Target Changer | Motorized, programmable multi-target rotator with rastering and position indexing |
| Vacuum System | Dry-pump stack — turbomolecular pump backed by diaphragm or scroll pump |
| Deposition Chamber Ports | 8" CF for pump, 8" CF for heater, 8" CF for target assembly |
| Laser Source | KrF excimer laser (248 nm) |
| Optical Path | 45° turning mirror, plano-convex lens (f ≈ 50 cm) |
| Control Software | Windows 7 + LabVIEW 2013 (integrated real-time control of heater, target rotation, pressure regulation, pump sequencing, and laser triggering) |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 Laser MBE/PLD System |
| Substrate Heating | 1000 °C (laser heater), 850 °C (radiant heater) |
| Substrate Size | 1 cm × 1 cm (laser-heated stage), 2″ diameter (radiant-heated stage) |
| Vacuum Chamber Diameter | 18″ |
| RHEED Gun Voltage | 30 keV |
| RHEED Operating Pressure | ≤500 mTorr (O₂) |
| Gas Flow Control | O₂/N₂ up to 100 SCCM |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Target Mounting Options | 6 × 1″ or 3 × 2″ rotating target holder |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 MAPLE PLD System |
| Substrate Heating | Up to 500 °C with programmable controller |
| Substrate Size | Max. 2" diameter or multiple 1 cm × 1 cm samples |
| Substrate Rotation | 20 RPM |
| Vacuum Chamber Diameter | 18" |
| Target Stage | LN₂-cooled, single-target standard (multi-target optional) |
| Gas Flow Control | 50–100 SCCM MFC |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 PLD System |
| Vacuum Base Pressure | ≤5×10⁻⁹ Torr |
| Chamber Diameter | 18 in |
| Max Substrate Size | 6 in |
| Max Target Capacity | 6×1″ or 3×2″ |
| Substrate Heater | Radiant, O₂-compatible up to 1 atm (760 Torr) |
| Max Substrate Temperature | 850 °C (upgradable to 1000 °C) |
| Turbo Pump Speed | 400 L/s (software-controlled) |
| In-situ Diagnostics Support | RHEED, LAXS, IES |
| Load-Lock Compatible | Yes |
| Multi-Source Integration Options | PED, RF/DC Sputtering, DC Ion Gun |
| UHV Cluster Integration Ready | XPS, ARPES, MBE |