X-ray Detection Devices
Filter
Showing 1–30 of 32 results
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | AdvaPIX TPX3 |
| Sensor Material | CdTe (1 mm) or Si + 6LiF neutron converter layer |
| Pixel Pitch | 55 µm |
| Spatial Resolution | 15 µm (CdTe, sub-pixel), 2.5 µm (Si + 6LiF, σ PSF) |
| Frame Rate | Up to 40 M hits/s per module |
| Readout Chip | Timepix3 (CERN-developed) |
| Interface | USB 3.0 |
| Field of View | 14 × 14 mm |
| Max Effective Resolution | 6.5 MPix |
| Applications | Energy-resolved radiography, neutron imaging, particle tracking, time-of-flight imaging, Compton camera reconstruction |
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | MiniPIX EDU |
| Sensor Chip | Timepix |
| Pixel Size | 55 × 55 µm |
| Sensor Resolution | 256 × 256 pixels |
| Dynamic Range per Frame | 11082 counts |
| Dark Current | Negligible |
| Interface | USB 2.0 |
| Max Frame Rate | 55 fps |
| Dimensions | 88.9 × 21 × 10 mm |
| Weight | 30 g |
| Operating Modes | Event (count), ToT (energy deposition), ToA (time-of-arrival) |
| OS Compatibility | Windows, macOS, Linux |
| Software | RadView (educational radiation visualization suite) |
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | MiniPIX TPX |
| Detector Chip | Timepix (256 × 256 pixels) |
| Pixel Size | 55 µm |
| Sensor Material | Silicon |
| Sensor Thickness | 300 µm |
| Readout Interface | USB 2.0 |
| Frame Rate | up to 30 fps (1 ms exposure) |
| Operating Systems | Windows, macOS, Linux |
| Software | PIXET Lite (included), optional PIXET Pro or Pixelman |
| Radiation Types Detected | X-rays, neutrons, alpha particles, electrons, ions |
| Energy-resolved Imaging | Yes |
| Spatial Resolution | 55 µm |
| Dynamic Range | Effectively unlimited (zero dark current, photon-counting operation) |
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | MiniPIX TPX3 |
| Sensor Material | Si or CdTe |
| Sensor Thickness | 100 µm, 300 µm, 500 µm (Si) |
| Sensitive Area | 14 mm × 14 mm |
| Time Resolution | 1.6 ns |
| Readout Speed | 2.35 million hits/s |
| Frame Rate | 16 fps |
| Pixel Array | 256 × 256 |
| Pixel Pitch | 55 µm |
| Energy Resolution | 0.5–1 keV (Si), 1.1–3.6 keV (CdTe) |
| Minimum Detectable Energy | 3 keV (Si), 5 keV (CdTe) |
| Readout Chip | Timepix3 |
| Operating Modes | Time-over-Threshold (ToT), Time-of-Arrival (ToA) |
| Connectivity | µUSB 2.0 |
| Weight | 30 g |
| Dimensions | 80 mm × 21 mm × 14 mm |
| Software | Pixet Pro |
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | ADVAPIX TPX3F, MINIPIX TPX3F |
| Sensor Material | Si (100/300/500 µm), CdTe (1 mm) |
| Pixel Size | 55 × 55 µm |
| Array | 256 × 256 pixels |
| Dark Noise | None |
| Time Resolution | 1.6 ns |
| Event Rate (MAX) | 40 × 10⁶ hits/s (ADVAPIX TPX3F), 2.35 × 10⁶ hits/s (MINIPIX TPX3F) |
| Frame Rate | 30 fps (ADVAPIX), 16 fps (MINIPIX) |
| Readout Interface | USB 3.0 (ADVAPIX), USB 2.0 (MINIPIX) |
| Operating Modes | Frame-based (Event+iToT, iToT, ToA), Pixel/Event-driven (ToT+ToA, ToA-only, ToT-only) |
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | WidePIX 2(1)x10-MPX3 |
| Sensor Material | Si or CdTe |
| Sensor Thickness | 300 µm (Si), 1 mm (CdTe) |
| Active Area | 28 (14) × 140.8 mm |
| Pixel Count | 512 (256) × 2560 |
| Pixel Size | 55 µm |
| Spatial Resolution | 9 lp/mm |
| Frame Rate | 170 fps (1×10 configuration), 80 fps (2×10 configuration) |
| Readout Chip | Medipix3 RX |
| Energy Thresholds | 1 or 2 programmable thresholds per pixel |
| Minimum Detectable Energy | 4 keV (Si), 5 keV (CdTe) |
| ADC Resolution | 12-bit or 24-bit (configurable) |
| TDI Support | Hardware-based, enabled in 1×10 mode at 1.5 m/s scan speed |
| Interface | Dual Ethernet RJ-45 |
| Dimensions | 210 × 190 × 42 mm (L × W × H) |
| Edgeless Tiling | Yes |
| Brand | Advacam |
|---|---|
| Origin | Czech Republic |
| Model | WidePIX 5×5 |
| Detector Architecture | Tiled 5×5 array of Timepix3 hybrid pixel detectors |
| Sensor Material | Edgeless Si or CdTe |
| Total Active Area | ~14.1 × 14.1 cm² |
| Pixel Count | 1280 × 1280 (1.63 MP) |
| Pixel Pitch | 55 µm |
| Energy Threshold Range | Adjustable from ~3 keV (Si) or ~10 keV (CdTe) |
| Counting Mode | Per-pixel digital photon counting with time-over-threshold (ToT) energy estimation |
| Frame Rate | Up to 100 fps (full frame, depending on readout configuration) |
| Readout Interface | USB 3.0 or PCIe (optional) |
| Compliance | CE, RoHS, compatible with ISO 17025-accredited lab environments |
| Brand | Aisida |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | XG6000 |
| Pricing | Upon Request |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | Fast SDD |
| Detector Type | Silicon Drift Detector (SDD) |
| Energy Resolution (FWHM) | ≤125 eV at Mn Kα (5.9 keV) |
| Peak Shaping Time | 0.2–1.0 µs (adjustable) |
| Maximum Input Count Rate | ≥1.2 Mcps |
| Output Count Rate Linearity | >99.5% up to 1.2 Mcps |
| Operating Temperature | −20 °C to −35 °C (Peltier-cooled) |
| Active Area | 50 mm² (standard) |
| Thickness | 450 µm |
| Compliance | RoHS, CE |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | Fast SDD |
| Energy Resolution (55Fe) | ≤121 eV FWHM |
| Maximum Count Rate | >1 Mcps |
| Peak-to-Background Ratio | 20,000:1 |
| Operating Temperature | <80 K (achieved with thermoelectric cooling at +30 °C ambient) |
| Package | TO-8 vacuum-sealed |
| Detector Type | Silicon Drift Detector (SDD) |
| Brand | AMPTEK |
|---|---|
| Origin | USA |
| Model | FASTSDD |
| Active Area Options | 25 mm² (collimated to 17 mm²) or 70 mm² (collimated to 50 mm²) |
| Energy Resolution | ≤122 eV at 5.9 keV |
| Maximum Count Rate | >1,000,000 cps |
| Peak-to-Background Ratio | 26,000:1 |
| Preamplifier Rise Time | <35 ns |
| Window Options | Beryllium (0.5 mil / 12.5 µm) or Silicon Nitride (C-series / Si₃N₄) |
| Detector Thickness | 500 µm |
| Package | TO-8 |
| Cooling Delta-T | >85 K |
| Noise Performance | Optimized for low electronic noise and high charge collection efficiency |
| Brand | AMPTEK |
|---|---|
| Origin | USA |
| Model | X-123 FAST SDD C-Series Window |
| Detector Type | Silicon Drift Detector (SDD) with Si₃N₄/Al Thin-Film Window |
| Application Context | Low-Energy X-ray Detection (down to ~100 eV), Vacuum-Compatible & Ambient-Pressure Configurations |
| Compliance | ASTM E1598, ISO 21434 (X-ray instrumentation framework), Compatible with IEC 61000-4 Electromagnetic Immunity Standards |
| Software Interface | USB 2.0 / Ethernet |
| Brand | AMPTEK |
|---|---|
| Origin | USA |
| Model | X-123FAST SDD (70 mm²) |
| Resolution | 123 eV FWHM @ 5.9 keV |
| Max Count Rate | >1,000,000 cps |
| Peak-to-Background Ratio | 26,000:1 |
| Window Options | 0.5-mil Be or Si₃N₄ (C2) |
| Cooling ΔT | >85 K |
| Preamplifier Output Pulse Width | <60 ns |
| Active Si Thickness | 500 µm |
| Collimated Effective Area | 50 mm² |
| Total Sensitive Area | 70 mm² |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XR-100CR |
| Detector Type | Si-PIN |
| Active Area | 6–25 mm² |
| Thickness | 300 or 500 µm |
| Be Window | 12.5 or 25 µm |
| Energy Resolution | 145–230 eV FWHM (@ 5.9 keV, ⁵⁵Fe) |
| Cooling | Two-stage thermoelectric (TEC), operating temp ≈ −55 °C |
| Power Consumption | <1 W |
| Housing | TO-8 hermetic package |
| Compliance | UL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TUV Certified (CU 72072412 01) |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported |
| Model | XR-100CR |
| Pricing | Upon Request |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XR-100FastSDD-70 |
| Active Area | 70 mm² (effective to 50 mm²) |
| Energy Resolution | 123 eV FWHM @ 5.9 keV |
| Max Count Rate | >2,000,000 cps |
| Peak-to-Background Ratio | >26,000:1 |
| Window Options | Be (12.5 µm) or Si₃N₄ (C₂) |
| Detector Thickness | 500 µm |
| Cooling ΔT | >85 K |
| Preamplifier Rise Time | <60 ns |
| Package | TO-8 |
| Certifications | UL 61010-1:2009, CAN/CSA C22.2 No. 61010-1, TUV CU 72101153 01 |
| Brand | Amptek |
|---|---|
| Model | XR-100SDD |
| Detector Type | Silicon Drift Detector (SDD) |
| Active Area | 25 mm² |
| Silicon Thickness | 500 µm |
| Energy Resolution @ 5.9 keV (⁵⁵Fe) | 125–140 eV FWHM |
| Max Count Rate | 500,000 cps |
| Peak-to-Background Ratio | 8200:1 |
| Be Window Thickness | 12.5 µm |
| Operating Temperature | 0°C to +50°C |
| Power Consumption | <1 W |
| Weight | 125 g |
| Dimensions | 7.6 × 4.4 × 2.9 cm |
| Warranty | 1 year |
| Typical Lifetime | 5–10 years |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XR-100SDD |
| Detector Type | Silicon Drift Detector (SDD) |
| Active Area | 25 mm² |
| Thickness | 500 µm |
| Energy Resolution | 125 eV FWHM @ 5.9 keV (11.2 µs peaking time) |
| Max Count Rate | 500,000 cps |
| Peak-to-Background Ratio | 20,000:1 (5.9 keV / 1 keV) |
| Be Window Thickness | 12.5 µm (0.5 mil) |
| Operating Temperature | ~250 K (−23 °C) |
| Cooling | Two-stage thermoelectric (Peltier), no liquid nitrogen required |
| Encapsulation | TO-8 metal can with vacuum-compatible Be window |
| Power Consumption | <1 W |
| Certifications | UL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TÜV Certificate #CU 72072412 02 |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XR-100SDD |
| Detector Type | Silicon Drift Detector (SDD) |
| Active Area | 25 mm² |
| Thickness | 500 µm |
| Energy Resolution | 125 eV FWHM @ 5.9 keV (11.2 µs peaking time) |
| Max Count Rate | 500,000 cps |
| Peak-to-Background Ratio | 20,000:1 (5.9 keV / 1 keV) |
| Be Window Thickness | 12.5 µm (0.5 mil) |
| Cooling Method | Two-stage thermoelectric (Peltier), no liquid nitrogen required |
| Operating Temperature | ~250 K (−23 °C) |
| Housing | TO-8 metal can |
| Compliance | UL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TUV Certified (CU 72072412 02) |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XRA-700 |
| Detector Channels | 7 |
| Cooling | Thermoelectric (Peltier) |
| Power Supply | Integrated regulated DC supply |
| Preamp | Low-noise charge-sensitive preamplifier per channel |
| Energy Range | 1 keV – 40 keV (dependent on detector configuration) |
| Compliance | RoHS, CE |
| Brand | Amsterdam Scientific Instruments (ASI) |
|---|---|
| Origin | Netherlands |
| Model | Cheetah M3/T3 Ultra (512 × 1024) |
| Sensor Technology | Medipix3RX / Timepix3 hybrid pixel architecture |
| Pixel Size | 55 µm |
| Radiation Tolerance | >1 GGy (electron beam, Giga-eV equivalent) |
| Readout | SPIDR3 or SPIDR3 Turbo (event-driven or frame-based) |
| Data Interface | Gigabit Ethernet (TCP/UDP) to Linux (Ubuntu) workstation |
| Mounting Options | Bottom-mount static or side-insert retractable |
| Compliance | Designed for GLP/GMP-adjacent TEM environments |
| Software Integration | SerialEM, Instamatic, PantaRhei, LiberTEM via RESTful Serval API |
| Brand | Amsterdam Scientific Instruments (ASI) |
|---|---|
| Origin | Netherlands |
| Model | LynX T3 or M3 |
| Pixel Pitch | 55 µm |
| Sensor Options | Si, GaAs, CdTe |
| Readout Speed | Up to >500 MHz (LynX T3), 1800 fps (LynX 1800), 120 fps (LynX 120) |
| Energy Thresholds | 1–8 adjustable thresholds |
| Frame Buffer | On-chip, configurable |
| Compliance | Designed for GLP/GMP-aligned workflows, compatible with ISO/IEC 17025 traceable calibration protocols |
| Software Interface | Native support for EPICS, TANGO, and HDF5-based data streaming |
| Brand | Aolong |
|---|---|
| Origin | Japan |
| Distributor Type | Authorized Distributor |
| Origin Category | Imported |
| Pricing | Upon Request |
| Brand | DECTRIS |
|---|---|
| Origin | Switzerland |
| Model | EIGER2 R |
| Detector Module Count | 1 / 2 / 4 |
| Active Area (W×H) | 77.2×38.6 mm² / 77.1×79.7 mm² / 155.1×162.2 mm² |
| Pixel Size | 75×75 µm² |
| Point Spread Function | 1 pixel |
| Energy Thresholds | 2 |
| Threshold Range | 3.5–30 keV |
| Maximum Count Rate | 6.9×10⁸ cps/mm² |
| Counter Depth | 2×16 bit per threshold |
| Frame Rate | 50 / 100 / 20 Hz |
| Readout Mode | Simultaneous read/write, zero dead time |
| Image Bit Depth | 32 bit |
| Vacuum Compatibility | Optional |
| Cooling | Air / Water / Water |
| Dimensions (W×H×D) | 100×140×93 mm³ / 114×133×240 mm³ / 235×235×372 mm³ |
| Weight | 1.8 / 4.7 / 15 kg |
| Brand | Dexela |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | CMOS X-ray Camera |
| Pricing | Upon Request |
| Effective Area | 114.9 × 64.6 mm |
| Resolution | 1536 × 864 pixels |
| Pixel Size | 74.8 µm (1×1), 149.6 µm (2×2), 299.2 µm (4×4) |
| Frame Rate | Up to 65 fps at full resolution (Camera Link) |
| MTF @ 6 lp/mm | >20% (with 150 µm high-resolution CsI scintillator, no binning) |
| DQE | ~0.7 at 0.5 lp/mm (28 kV, W/Al filtration) |
| Binning Modes | 1×1, 1×2, 2×2, 1×4, 2×4, 4×4 |
| Dynamic Range | 6400:1 (low-noise mode), 2400:1 (high-dynamic-range mode) |
| ADC Resolution | 14-bit |
| Interface | Camera Link or Gigabit Ethernet |
| Max. X-ray Energy | Standard ≤220 kV |
| Scintillator Options | Gd₂O₂S (Gadox) or columnar CsI, thickness customizable per application |
| Dimensions | 241 × 150 × 42 mm |
| Weight | 1.9 kg |
| Brand | Moxtek |
|---|---|
| Origin | USA |
| Model | Monoblock |
| Tube Type | Metal-Ceramic |
| Target Materials | Ag, W, Pd, Rh |
| Operating Voltage Range | 10–50 kV |
| Current Range | 0–0.2 mA |
| Max Output Power | 10 W |
| Focal Spot Size | 400 µm |
| Stability | < 1.0% RSD |
| Beryllium Window Thickness | 0.25 mm |
| Max Input Power | 20 W |
| Operating Temperature | −10 °C to +50 °C |
| Storage Temperature | −40 °C to +60 °C |
| Weight | 500 g |
| Compliance | RoHS, CE (per IEC 61010-1), FDA 21 CFR Part 1020.40 (X-ray equipment) |
| Brand | Moxtek |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | TUB00046 |
| Voltage Range | ±4–40 kV |
| Current Range | 0–100 µA |
| Max Power Output | 4 W |
| Anode Target Options | Tungsten (W), Rhodium (Rh), Copper (Cu) |
| Focal Spot Size | 300 µm |
| HV Cable Length Options | 1–11.5 inches |
| Warranty | 12 months |
| Brand | Moxtek |
|---|---|
| Origin | USA |
| Model | XPIN-BT |
| Active Area | 6 mm² or 13 mm² |
| Silicon Thickness | 625 µm |
| Beryllium Window Thickness | 8 µm or 25 µm |
| Collimator Materials | Tungsten / Cobalt / Titanium / Aluminum |
| Energy Resolution (FWHM) | < 170 eV (6 mm²), < 230 eV (13 mm²) |
| Peak-to-Background Ratio | 3600:1 @ 1 keV (6 mm², typical), 3000:1 @ 1 keV (13 mm², typical) |
| Brand | Semicircle-Instrument |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | OEM/ODM Producer |
| Model | DPAE-VSDD-Pro |
| Detection Area | 20 mm² / 30 mm² / 50 mm² (selectable) |
| Thickness | 450 µm |
| Energy Resolution | 125–140 eV FWHM @ 5.9 keV (⁵⁵Fe) |
| Peak Time | 1 µs (max cooling) |
| Count Rate Capability | up to 2,000 kcps |
| Peak-to-Background Ratio | 15,000:1 |
| Window Options | 1 µm graphene or 8 µm beryllium |
| Ultimate Vacuum | 10⁻⁷ Torr |
| Operating Temperature Range | 0–50 °C |
| Storage Conditions | –10–30 °C, 10–90% RH (non-condensing) |
| Power Supply | 4.5–9 VDC |
| Gain Stability | <20 ppm/°C |
| Interface Options | USB 2.0, RS-232, Ethernet |
| Cooling | Peltier-based, cryogen-free |
| Warranty | 12 months |
| Expected Service Life | 5–10 years under standard lab use |
| Brand | Semicircle-Instrument |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | OEM Manufacturer |
| Model | TUB0011-CS1B/2B |
| Max Anode Voltage | 50 kV |
| Max Anode Current | 1 mA |
| Max Power | 50 W |
| Focal Spot Size | 1.0 × 1.0 mm (CS1B) / 0.1 × 0.1 mm (CS2B) |
| Filament Current | ≈1.7 A @ 50 kV/1 mA |
| Filament Voltage | ≈2.0 V |
| X-ray Exit Angle | 17° |
| Anode Target Materials | W, Rh, Mo, Ag, Cu (customizable) |
| Beryllium Window Thickness | 125 µm or 200 µm (selectable) |
| Electrical Configuration | Anode at positive high voltage, cathode grounded |
| Cooling Method | Forced-air cooling (>150 CFM), max housing temperature ≤55 °C |
| Weight | 2.5 kg |