RuoTarg Ru Sputtering Target
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Classification | Domestic (China) |
| Model | Ru Target |
| Pricing | Available Upon Request |
| Standard Dimensions | Ø18×2.0 mm, Ø25×10 mm, Ø50.8×2.0 mm, Ø60×3.0 mm |
| Purity | 99.95% (3N5) |
| Packaging | Class 1000 Cleanroom / Class 100 Clean Bag |
Overview
The RuoTarg Ru Sputtering Target is a high-purity elemental ruthenium (Ru) thin-film deposition material engineered for physical vapor deposition (PVD), specifically magnetron sputtering processes. Ruthenium targets are widely employed in advanced semiconductor metallization, hard mask development, microelectromechanical systems (MEMS), and high-performance resistive memory (ReRAM) applications due to Ru’s exceptional thermal stability, low electrical resistivity (~7.1 µΩ·cm), high melting point (2334 °C), and excellent corrosion resistance. This target is fabricated via vacuum hot pressing or powder metallurgy techniques under inert atmosphere control to minimize oxygen and carbon contamination—critical for maintaining stoichiometric integrity and film uniformity in sub-10 nm device architectures.
Key Features
- High-purity ruthenium (99.95%, 3N5) certified by ICP-MS and GDMS analysis, with trace impurities (e.g., Fe, Ni, Cr, O, C) rigorously controlled below 50 ppm each.
- Consistent grain structure and density (>98% theoretical density) achieved through optimized sintering profiles, ensuring stable arcing behavior and long-term plasma stability during DC or RF sputtering.
- Dimensional tolerances maintained within ±0.05 mm for diameter and ±0.1 mm for thickness, supporting precise mounting in standard 2–6 inch sputter cathodes (e.g., AJA, Kurt J. Lesker, ULVAC configurations).
- Surface finish Ra ≤ 0.8 µm on the sputtering face, minimizing particle generation and improving deposition rate reproducibility across wafer batches.
- Backside bonded to high-conductivity OFHC copper backing plates (optional) for enhanced thermal dissipation and reduced target warping during high-power operation (≥5 kW).
Sample Compatibility & Compliance
This Ru target is compatible with both planar and rotatable magnetron sputtering systems operating under medium-to-high vacuum conditions (base pressure ≤5×10⁻⁷ Torr). It supports reactive sputtering in Ar/O₂ or Ar/N₂ mixtures for RuO₂ or RuN thin-film synthesis. All targets undergo post-sintering annealing in ultra-high-purity argon (99.999%) to relieve residual stress and stabilize crystallographic orientation (predominantly hexagonal close-packed, hcp). Manufacturing adheres to ISO 9001:2015 quality management protocols; material certificates include full traceability to raw powder lot numbers and batch-specific analytical reports. While not classified as a finished instrument, the target complies with SEMI F57 standards for sputter target dimensional verification and SEMI F63 for metallic target purity reporting.
Software & Data Management
As a passive consumable component, the Ru target does not integrate software or embedded firmware. However, its performance metrics—including sputter rate, film thickness uniformity (±3.5% over 150 mm wafers), and target utilization efficiency—are fully trackable within industry-standard thin-film process monitoring platforms such as Applied Materials EnCore™, Veeco Synosis®, or custom LabVIEW-based deposition loggers. Users may import certified material data sheets (MDS) into enterprise quality management systems (QMS) for audit readiness under ISO/IEC 17025 or FDA 21 CFR Part 11-compliant environments where electronic records of consumables are required for GLP/GMP traceability.
Applications
- Semiconductor front-end-of-line (FEOL) integration: Ru as a diffusion barrier and liner for Cu interconnects in 5 nm and beyond logic nodes.
- Phase-change memory (PCM) and conductive-bridge RAM (CBRAM): Ru electrodes enabling low-voltage switching and improved endurance (>10⁶ cycles).
- Electrocatalytic electrode fabrication: Ru-based thin films for proton exchange membrane (PEM) water electrolysis anodes.
- Optical coatings: Ru layers in multilayer EUV mask absorbers and extreme ultraviolet (EUV) lithography optics.
- Research-grade thin-film studies: In situ XRD and TEM sample preparation requiring stoichiometric, low-defect Ru films with controlled (002) texture.
FAQ
What is the typical sputter yield of this Ru target under 300 W DC power in pure Ar at 3 mTorr?
Sputter yield is system-dependent; however, literature values for polycrystalline Ru under these conditions range from 0.8–1.2 atoms/ion (Ar⁺), corresponding to ~0.18–0.25 nm/s at 300 W on a 2-inch target.
Can this target be used in RF sputtering for insulating RuO₂ deposition?
Yes—RF sputtering (13.56 MHz) in Ar/O₂ (90/10) enables stoichiometric RuO₂ growth with resistivity tunable between 100–500 µΩ·cm depending on O₂ flow ratio and substrate temperature.
Is backside bonding to copper available as a factory option?
Yes—OFHC copper backing plates with indium or eutectic solder bonding are offered with thermal interface resistance < 0.15 K·cm²/W and flatness tolerance < 30 µm over the bonded area.
Do you provide target lifecycle modeling or erosion profile simulation data?
Upon request, finite-element-based erosion simulations (using commercial tools such as COMSOL Multiphysics®) can be supplied for specific cathode geometries and power distributions.
Are there RoHS or REACH declarations available for this material?
Yes—full substance declaration per EU Regulation (EC) No 1907/2006 (REACH) and Directive 2011/65/EU (RoHS 2) is included in the Certificate of Conformance shipped with each order.
