AlN Single Crystal Wafers (Imported, -Oriented, 9.9 mm × 9.9 mm × 0.5 mm)
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AlN Single Crystal |
| Price | Upon Request |
| Orientation | <0001> ±1° |
| Dimensions | 9.9 × 9.9 × 0.5 ± 0.05 mm |
| Absorption Coefficient | < 80 cm⁻¹ |
| Etch Pit Density (EPD) | < 1 × 10⁵ cm⁻² |
| Usable Area | > 80 % |
| Edge Exclusion | 1.0 mm |
| Surface Roughness (Al-face) | CMP-polished, RMS < 0.8 nm |
| Surface Roughness (N-face) | Optically polished, RMS < 3 nm |
| Dislocation Density | < 1 × 10⁵ cm⁻² |
| XRD Rocking Curve FWHM (002) | < 0.3° |
| XRD Rocking Curve FWHM (102) | < 0.5° |
| Packaging | Vacuum-sealed in Class 100 cleanbag inside Class 1000 cleanroom environment |
Overview
Aluminum nitride (AlN) single crystal wafers are high-purity, wide-bandgap semiconductor substrates engineered for demanding applications in optoelectronics, high-frequency acoustic devices, deep-ultraviolet (DUV) light-emitting diodes (LEDs), laser diodes (LDs), and high-power/high-temperature electronics. This imported AlN wafer is grown via physical vapor transport (PVT) under controlled nitrogen-rich conditions, yielding low-defect, stoichiometric bulk crystals with exceptional thermal conductivity (~320 W/m·K), high electrical resistivity (>10¹¹ Ω·cm), and a direct bandgap of ~6.2 eV. Its -oriented basal plane ensures optimal epitaxial alignment for heterostructure growth—particularly for AlGaN-based DUV emitters and surface acoustic wave (SAW) resonators requiring precise lattice matching and minimal interfacial strain.
Key Features
- High Structural Quality: Low dislocation density (<1 × 10⁵ cm⁻²) and etch pit density (EPD), confirmed by chemical etching and high-resolution X-ray diffraction (HR-XRD).
- Precision Crystallographic Orientation: ±1° c-axis alignment ensures reproducible nucleation and reduced defect propagation during subsequent epitaxy (e.g., MOCVD or MBE of AlGaN layers).
- Optimized Surface Finish: Dual-face polishing protocol: aluminum-polar face chemically-mechanically polished (CMP) to RMS roughness < 0.8 nm; nitrogen-polar face optically polished to RMS < 3 nm—enabling uniform thin-film deposition and low interface scattering.
- Narrow XRD Rocking Curves: Full width at half maximum (FWHM) of < 0.3° for the (002) reflection and < 0.5° for the (102) reflection confirm superior crystalline homogeneity and low mosaic spread across the usable area.
- Controlled Optical Absorption: Absorption coefficient < 80 cm⁻¹ at 250 nm supports efficient photon extraction in DUV optoelectronic devices.
- Strict Cleanroom Handling: Packaged under vacuum in Class 100 cleanbags within ISO Class 6 (1000-class) cleanroom environments to prevent particulate contamination and surface oxidation.
Sample Compatibility & Compliance
These AlN wafers comply with industry-standard substrate specifications for research and pilot-scale epitaxial development. They are compatible with standard III-nitride MOCVD and molecular beam epitaxy (MBE) platforms, including those equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. The wafers meet requirements for ASTM F274–21 (Standard Specification for Aluminum Nitride Substrates) and align with material qualification practices referenced in JEDEC JESD22-A108 (Reliability Testing for Compound Semiconductors). While not certified to ISO 9001 or IATF 16949 at the wafer level, full traceability—including growth batch ID, orientation verification report, and surface metrology data—is provided upon request for GLP-compliant R&D documentation.
Software & Data Management
No embedded firmware or proprietary software is associated with these passive substrate wafers. However, structural characterization data—including XRD θ–2θ scans, rocking curves, AFM topography maps, and EPD histograms—are supplied in standardized formats (CSV, TIFF, .xrdml) compatible with common analysis suites such as PANalytical HighScore Plus, Bruker DIFFRAC.EVA, and Gwyddion. All measurement reports include instrument calibration metadata and uncertainty statements per ISO/IEC 17025 guidelines where applicable. For integration into automated fabrication workflows, wafer IDs can be encoded in SEMI-compliant 2D data matrix barcodes upon custom order.
Applications
- Epitaxial template for AlGaN-based deep-ultraviolet LEDs (210–280 nm) and laser diodes
- Substrate for high-frequency SAW and BAW filters operating above 3 GHz
- Platform for high-temperature, radiation-hardened power electronic devices
- Thermal spreader or heat sink layer in hybrid packaging of GaN HEMTs
- Reference material for crystal growth modeling and defect kinetics studies
- Baseline substrate for comparative evaluation of heteroepitaxial stress relaxation techniques
FAQ
What is the typical lead time for custom-sized AlN wafers?
Standard 9.9 mm × 9.9 mm × 0.5 mm wafers ship within 5–7 business days after order confirmation. Custom dimensions or orientations require minimum batch quantities and may extend lead time to 8–12 weeks.
Can you provide certificates of analysis (CoA) for each wafer lot?
Yes—each shipment includes a CoA listing orientation verification method, EPD measurement protocol, XRD FWHM values, surface roughness metrics, and cleanroom packaging validation.
Is the nitrogen-polar face suitable for direct metalorganic chemical vapor deposition (MOCVD)?
The optically polished N-face is compatible with standard MOCVD precursors but requires in-situ annealing and surface nitridation prior to nucleation; process optimization is recommended for specific reactor configurations.
Do these wafers meet FDA or USP requirements for biomedical device substrates?
While AlN itself is biocompatible and inert, these wafers are supplied as research-grade substrates—not sterilized or validated for implantable use. Regulatory compliance must be established independently per ISO 10993 or USP for end-application use cases.
