合肥科晶
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Showing all 17 results
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | General Distributor |
| Origin Category | Imported |
| Model | AL2O3+Ga2O3-β Thin Film |
| Price | Upon Request |
| Growth Method | Spin Coating + Annealing |
| Ga2O3-β Crystallographic Orientation | Textured along (201) |
| Ga2O3-β Thickness | ~400 nm |
| Al2O3 Substrate Dimensions | 10 × 10 × 0.5 mm |
| Al2O3 Substrate Surface | Single-side polished |
| Al2O3 Crystal Orientation | c-plane (<0001>) |
| Packaging | Vacuum-sealed in Class 100 cleanroom bag, stored and shipped from Class 1000 cleanroom environment |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AlN Single Crystal |
| Price | Upon Request |
| Orientation | <0001> ±1° |
| Dimensions | 9.9 × 9.9 × 0.5 ± 0.05 mm |
| Absorption Coefficient | < 80 cm⁻¹ |
| Etch Pit Density (EPD) | < 1 × 10⁵ cm⁻² |
| Usable Area | > 80 % |
| Edge Exclusion | 1.0 mm |
| Surface Roughness (Al-face) | CMP-polished, RMS < 0.8 nm |
| Surface Roughness (N-face) | Optically polished, RMS < 3 nm |
| Dislocation Density | < 1 × 10⁵ cm⁻² |
| XRD Rocking Curve FWHM (002) | < 0.3° |
| XRD Rocking Curve FWHM (102) | < 0.5° |
| Packaging | Vacuum-sealed in Class 100 cleanbag inside Class 1000 cleanroom environment |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Si-on-Cu Thin Film Wafer |
| Price | Upon Request |
| Substrate Diameter | 4 inch (100 mm) or 10×10 mm square |
| Cu Film Thickness | 400 nm |
| Cu Crystallography | Highly Oriented Polycrystalline, Preferential <111> Texture |
| Si Substrate | P-type, Boron-doped, <100> orientation, Single-side polished, Resistivity: 1–20 Ω·cm |
| Surface Roughness | As-grown, Not Specified |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual cassette packaging |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Diamond-on-Insulator (DOI) High-Resistivity Diamond Thin-Film Wafers |
| Price | Upon Request |
| Substrate Diameter | 4" (101.6 mm) |
| Substrate Thickness | 0.5 mm |
| Silicon Crystal Orientation | <100> ± 0.5° |
| Insulating Layer | SiO₂ |
| SiO₂ Thickness | 2 µm |
| Oxide Layer | 1 µm |
| Resistivity | 1 × 10³ – 1 × 10⁴ Ω·cm |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual wafer cassette |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | General Distributor |
| Origin Category | Imported |
| Model | Diamond-on-Silicon (High-Resistivity DOS) Wafer |
| Price | Upon Request |
| Diameter | 4" (101.6 mm) |
| Substrate Thickness | 0.5 mm |
| Silicon Crystal Orientation | <100> ± 0.5° |
| Diamond Film Thickness | ~2 µm (nominal) |
| Resistivity | 1×10³ – 1×10⁴ Ω·cm |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual cassette packaging |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | General Distributor |
| Origin Category | Imported |
| Model | Ga2O3-ß Single Crystal |
| Price | Upon Request |
| Crystal Structure | Monoclinic |
| Lattice Constants | a = 12.23 Å, b = 3.04 Å, c = 5.80 Å, β = 103.7° |
| Orientation | <201> ±0.7° |
| Dimensions | Ø50.8 × 0.65 mm |
| Surface Finish | Single-side polished |
| Packaging | Vacuum-sealed in Class 100 cleanroom bag inside Class 1000 cleanroom environment or individual wafer cassette |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | GaSe (Imported Material) |
| Price | Upon Request |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | General Distributor |
| Origin Category | Imported |
| Model | Graphene Film |
| Price | Upon Request |
| Dimensions | Ø100 mm |
| Growth Method | CVD |
| Thickness | 1–10 monolayers |
| Ni Layer Thickness | 300 nm |
| SiO₂ Layer Thickness | 500 nm |
| Si Substrate Thickness | 500 µm |
| Useful Area | ~90% |
| Packaging | Vacuum-sealed in Class 100 cleanroom bag inside Class 1000 cleanroom environment, or individual wafer cassette |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | InP-on-InGaAs Semi-Insulating EPI Wafer |
| Price | Upon Request |
| Diameter | 2 inch |
| Crystal Orientation | <100> |
| Substrate Doping | Fe-doped |
| Resistivity | >1×10⁷ Ω·cm |
| EPD | <1×10⁴ cm⁻² |
| Epilayer Type | N-type InGaAs (Si-doped) |
| Lattice Matching | Fully matched to InP |
| Carrier Concentration (Nc) | >2×10¹⁸ cm⁻³ |
| Thickness | 0.5 µm (±20%) |
| Growth Method | MOCVD |
| Surface Finish | Double-side polished |
| Brand | 合肥科晶 |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestically Manufactured |
| Model | MgAl2O4 |
| Pricing | Upon Request |
| Crystal Structure | Cubic, Lattice Constant a = 8.085 Å |
| Growth Method | Czochralski (CZ) |
| Melting Point | 2130 °C |
| Density | 3.64 g/cm³ |
| Mohs Hardness | 8 |
| Thermal Expansion Coefficient | 7.45 × 10⁻⁶ /°C |
| Acoustic Velocity | 6500 m/s |
| [100] Shear Wave Propagation Loss (9 GHz) | 6.5 dB/µs |
| Color & Appearance | White, Transparent |
| Standard Orientations | <100>, <110>, <111> |
| Orientation Tolerance | ±0.5° |
| Standard Dimensions | 2" dia × 0.5 mm, 10 × 10 × 0.5 mm, 10 × 5 × 0.5 mm |
| Polishing | Single-side or double-side polished |
| Surface Roughness (Ra) | <5 Å |
| Packaging | Class 1000 cleanroom environment |
| Brand | 合肥科晶 |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model | OTF-1200X-S2-50SL |
| Price Range | USD 7,000–14,000 |
| Instrument Type | Horizontal Tube Furnace |
| Max Temperature | 1200°C |
| Temperature Control Accuracy | ±1°C |
| Total Power | 2.5 kW |
| Max Ramp Rate (via sliding) | 100°C/min |
| Heating Element | Molybdenum-Doped Fe-Cr-Al Alloy |
| Tube Dimensions | Quartz, OD 50 mm × ID 44 mm × L 1400 mm |
| Chamber Dimensions (per zone) | 200 mm heating length, 60 mm uniformity zone (±1°C @ 400–1200°C) |
| Vacuum Level | 1×10⁻² Torr (mechanical pump) |
| Sliding Rail Length | 1200 mm |
| Net Weight | ~80 kg |
| Certifications | CE, UL/MET/CSA compliant components (>24 V), TÜV/UL61010 or CSA certification available upon request |
| Brand | 合肥科晶 |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestically Manufactured |
| Model | OTF-1200X-VHP4 |
| Price Range | ¥50,000–¥100,000 |
| Instrument Type | Tubular Furnace |
| Max Operating Temperature | 1100 °C |
| Temperature Control Accuracy | ±1 °C |
| Max Power | 2.2 kW |
| Heating Rate | Not Specified |
| Heating Method | Resistive (Silicon Carbide Heating Elements) |
| Internal Chamber Dimensions | Ø100 mm × 1200 mm (Quartz Tube), Heating Zone Length:300 mm |
| Maximum Applied Pressure | 6 ton-force (10 MPa gauge) |
| Vacuum Level | 1×10⁻⁵ Torr (with turbomolecular pump), 1×10⁻² Torr (with rotary vane pump) |
| Cooling | Water-cooled KF-25 flanges |
| Programmability | 30-segment PID temperature ramping |
| Input Voltage | 208–240 VAC, 50/60 Hz |
| Net Weight | 365 kg |
| Overall Dimensions | 1050 mm (L) × 750 mm (W) × 1750 mm (H) |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Si-on-Ge Epitaxial Thin Film |
| Price | Upon Request |
| Si Substrate | N-type, P-doped, Ø4″ × 0.5–0.55 mm, <100> orientation, 2 SEMI-standard flats, 0° off-axis, resistivity 1–10 Ω·cm, particle count <50 per wafer (≥0.20 µm) |
| Ge Epilayer | 0.5 µm ±3%, <100> orientation, N-type or P-type doping (1–5)×10¹⁹ cm⁻³ |
| Surface RMS Roughness | <2 nm |
| Available Formats | Ø4″ wafers or 10×10 mm diced chips |
| Packaging | Vacuum-sealed Class 100 cleanroom bags in Class 1000 cleanroom environment, or individual cassette packaging |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Si/SiO2/Ta/Cu Thin-Film Stack |
| Price | Upon Request |
| Cu Orientation | <111> |
| Cu Thickness | 100–400 nm (highly oriented polycrystalline) |
| Ta Thickness | 20–50 nm (diffusion barrier) |
| Si Substrate | <100> p-type, B-doped |
| SiO₂ Thickness | 300 nm |
| Si Resistivity | 1–20 Ω·cm |
| Wafer Diameter | 100 mm (4 inch) |
| Wafer Thickness | 525 µm |
| Surface Roughness | As-grown (≤0.3 nm RMS typical) |
| Packaging | Vacuum-sealed Class 100 clean bag in Class 1000 cleanroom or individual cassette |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | General Distributor |
| Origin Category | Imported |
| Model | Si镀Ni薄膜 |
| Price | Upon Request |
| Silicon Substrate | P-type, B-doped, <100±0.5° orientation, Ø4" ±0.5 mm × 0.525 ±0.025 mm, single-side polished, resistivity 1–20 Ω·cm |
| Ni Film Thickness | 100 nm |
| Ni Crystallographic Orientation | <111>-oriented polycrystalline |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual wafer cassette |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Al₂O₃+Si Thin-Film (SOS) |
| Price | Upon Request |
| Si Orientation | <100> |
| Doping Type | Intrinsic (Undoped) |
| Si Thickness | 0.6 µm ± 0.06 µm |
| Si Resistivity | > 100 Ω·cm |
| Sapphire Substrate | R-plane Al₂O₃ with single flat |
| Sapphire Diameter | 100 mm |
| Sapphire Thickness | 0.53 mm |
| Surface Flatness | ≤ 10 µm |
| Parallelism | ≤ 20 µm |
| Surface Finish | Single-side polished |
| Projected C-axis Orientation | 45° ± 2° |
| Customization | Optional Si deposition on C-plane Al₂O₃ |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags inside Class 1000 cleanroom environment or individual wafer cassettes |
| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | VGF-GaAs-2INCH-N-TE |
| Price | Upon Request |
| Growth Method | Vertical Gradient Freeze (VGF) |
| Crystal Orientation | <100> ±0.5°, 2° off toward <101> |
| Diameter × Thickness | 2 inch (50.8 mm) × 0.5 mm |
| Surface Finish | Single-side polished (SSP) |
| Doping Type | N-type, Tellurium (Te) |
| Carrier Concentration | (1.5–26) × 10¹⁷ cm⁻³ |
| Electron Mobility | 2700–3600 cm²/V·s |
| Resistivity | 9 × 10⁻⁴ – 1.1 × 10⁻² Ω·cm |
| Etch Pit Density (EPD) | < 8 × 10³ cm⁻² |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual wafer cassettes |