Kaufman & Robinson, Inc. (KRI)
Filter
Showing all 7 results
| Brand | Kaufman & Robinson, Inc. (KRI) |
|---|---|
| Origin | USA |
| Model | EH 3000 HC |
| Discharge Voltage/Current | 50–300 V / up to 20 A |
| Beam Divergence (HWHM) | >45° |
| Cooling | Water-cooled |
| Compatible Gases | Ar, Xe, Kr, O₂, N₂ |
| Dimensions | Ø9.7" × H6" |
| Application | IBAD for high-density, uniform optical thin-film deposition |
| Brand | Kaufman & Robinson, Inc. (KRI) |
|---|---|
| Origin | USA |
| Model | eHL400-2 / eHL400-3 / eHL400-4 / eHL400-5 |
| Anode Configuration | Standard or Grooved |
| Cathode/Neutralizer | Filamentless |
| Beam Divergence (HWHM) | >45° |
| Operating Gases | Ar, Xe, Kr, O₂, N₂, and organic precursors |
| Discharge Voltage/Current | 50–300 eV / up to 5 A |
| Module Dimensions (per eH400 unit) | Ø94 mm × H76 mm |
| Total Source Length | Up to 1000 mm (modular assembly) |
| Orientation | Vertical or Horizontal |
| Power Supply | eH Plasma Power Pack (eHL-30010A), DC magnetic confinement, 40–200 VDC |
| Mounting | Movable base or quick-connect flange |
| Compliance | Designed for integration into UHV and HV vacuum systems per ISO 3529-3, ASTM F1180, and SEMI E10 standards |
| Brand | Kaufman & Robinson, Inc. (KRi) |
|---|---|
| Origin | USA |
| Model | EH200 |
| Type | End-Hall Ion Source |
| Application | Ion Beam Etching (IBE), Pre-deposition Substrate Cleaning, Ion-Assisted Deposition (IBAD), Ion Beam Sputtering (IBS), Direct Ion Plating (DIP) |
| Operating Gas | Argon (Ar), Oxygen (O₂), Nitrogen (N₂), or mixtures |
| Typical Beam Voltage | 50–1,200 V |
| Typical Beam Current | 0.1–4.0 A |
| Nominal Beam Power | Up to 3.5 kW |
| Ion Beam Diameter (at 10 cm) | ~80–120 mm |
| Cooling | Conduction-cooled (water-cooled optional) |
| Interface | CF-63 or CF-100 flange mount |
| Control | Analog 0–10 V / 4–20 mA or RS-232/RS-485 (with optional digital controller) |
| Compliance | CE-marked |
| Brand | Kaufman & Robinson, Inc. (KRI) |
|---|---|
| Origin | USA |
| Model | Gridless eH Series |
| Anode Voltage Range | 50–300 V (varies by model) |
| Beam Current | 5–20 A |
| Beam Divergence Angle | >45° |
| Gas Flow Rate | 2–100 sccm (model-dependent) |
| Physical Dimensions | 3.0″–9.7″ diameter, 3.0″–6.0″ height |
| Cooling | Optional water cooling (standard on eH2000 and above) |
| Neutralizer Options | Filament (F) or Hollow Cathode (HC) |
| Brand | Kaufman & Robinson, Inc. (KRI) |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | KRI Ion Beam Source Series |
| Pricing | Upon Request |
| Brand | Kaufman & Robinson, Inc. (KRI) |
|---|---|
| Origin | USA |
| Model | RFICP 325 |
| Type | RF Inductively Coupled Plasma Ion Source |
| Grid Configuration | E22 Gridded |
| Beam Coverage | Up to 1650 mm substrate holder diameter |
| Application | Ion Beam Assisted Deposition (IBAD) and Pre-deposition Substrate Cleaning |
| Brand | Kaufman & Robinson, Inc. (KRI) |
|---|---|
| Origin | USA |
| Model | RFICP 40 |
| Discharge Chamber Anode | RF-coupled |
| Ion Beam Current | >100 mA |
| Ion Kinetic Energy | 100–1200 eV |
| Grid Diameter | 4 cm |
| Beam Modes | Focused, Parallel, Divergent |
| Process Gas Flow | 3–10 sccm |
| Compatible Gases | Ar, Kr, Xe, O₂, N₂, H₂ |
| Operating Pressure | < 0.5 mTorr |
| Dimensions (L × Ø) | 12.7 cm × 13.5 cm |
| Neutralizer | LFN-2000 |