KRI eH Linear Hall Effect Ion Source – Model eHL400 Series

Overview

The KRI eH Linear Hall Effect Ion Source is a high-reliability, modular ion beam generator engineered for precision surface modification in industrial thin-film deposition and in-situ process control environments. Based on the proven eH400 Hall-effect discharge module architecture, the eH Linear configuration scales ion beam uniformity across extended substrates—up to 1 meter in length—by aligning multiple eH400 units in parallel. Unlike conventional axial or point-source ion sources, this linear geometry enables homogeneous ion flux distribution without mechanical scanning, making it ideal for continuous web coating, inline sputtering, cylindrical substrate rotation systems, and large-area IBAD (Ion Beam Assisted Deposition). The source operates via magnetically confined plasma generation: electrons are trapped in crossed electric and magnetic fields (E×B drift), sustaining high-density plasma at low pressure (1×10⁻⁴ to 5×10⁻³ Torr) while minimizing cathode erosion and thermal load. Its filamentless neutralizer eliminates thermionic emission degradation, supporting long-term stable operation under reactive gas chemistries including O₂ and N₂.

Key Features

• Modular linear architecture with scalable length (2–5 eH400 modules standard; custom configurations available)
• Filamentless hollow-cathode neutralizer ensuring >10,000 hours of maintenance-free operation
• DC magnetic confinement design enabling stable plasma ignition and sustained beam current at low discharge voltages (50–300 eV)
• Wide process gas compatibility: inert (Ar, Xe, Kr), reactive (O₂, N₂), and organic vapor precursors
• Grooved or standard anode options for optimized ion extraction efficiency and angular distribution control
• Compact module footprint (Ø94 mm × 76 mm height) with standardized flange interfaces (CF, ISO-K, or custom)
• Integrated power management via the eHL-30010A Plasma Power Pack, supporting remote analog/digital I/O (0–10 V, RS-485) for PLC synchronization

Sample Compatibility & Compliance

The eH Linear source is compatible with substrates ranging from flexible polymer webs (PET, PI) to rotating metal cylinders (diameter ≥50 mm) and flat glass or silicon wafers up to 300 mm. It integrates seamlessly into vacuum chambers rated for ≤1×10⁻⁷ Torr base pressure and supports bake-out temperatures up to 150 °C. All electrical and vacuum interfaces comply with SEMI E10 (Specification for Definition and Measurement of Equipment Reliability and Maintainability) and ISO 3529-3 (Vacuum technology — Vocabulary — Part 3: Vacuum gauges). Gas delivery paths meet ASTM F1180 (Standard Practice for Use of Mass Flow Controllers in Vacuum Systems). For regulated manufacturing environments, the system supports audit-ready operational logs when paired with compliant SCADA software meeting FDA 21 CFR Part 11 requirements for electronic records and signatures.

Software & Data Management

Operation is managed through the KRI eH Control Suite—a Windows-based application supporting real-time monitoring of beam voltage, current, neutralizer bias, gas flow rates, and chamber pressure. All parameters are timestamped and exportable in CSV or HDF5 format for traceability. The suite includes preconfigured recipes for common processes (e.g., “Ar cleaning @ 150 eV”, “O₂ oxidation @ 80 eV”) and allows closed-loop feedback integration with external vacuum gauges or optical emission spectrometers. Optional API access enables integration into MES platforms (e.g., Siemens Opcenter, Rockwell FactoryTalk) for automated lot-level reporting and GLP/GMP-compliant audit trails.

Applications

• Ion Beam Assisted Deposition (IBAD) of YBCO superconducting tapes and TiN barrier layers
• In-line web coating of anti-reflective and barrier films on flexible electronics substrates
• Cylindrical magnetron sputtering enhancement for automotive sensor housings and medical implants
• Pre-deposition ion cleaning of optical coatings (e.g., MgF₂, SiO₂) to reduce interface defects
• Low-energy ion etching for maskless patterning of 2D materials (MoS₂, graphene)
• Surface functionalization of biomedical polymers using nitrogen or oxygen ion beams

FAQ

What vacuum level is required for stable operation of the eH Linear source?
Stable operation requires a base pressure ≤5×10⁻⁵ Torr, with process pressure maintained between 1×10⁻⁴ and 5×10⁻³ Torr during gas flow.
Can the eH Linear source operate with reactive gases such as O₂ without compromising lifetime?
Yes—the filamentless neutralizer and water-cooled anode structure prevent oxidation-induced failure; lifetime exceeds 8,000 hours under continuous O₂ operation at ≤200 eV.
Is beam uniformity validated across the full 1-meter length?
Yes—KRI provides Faraday cup mapping reports per order, demonstrating ±5% flux variation over 95% of the active length at nominal operating conditions.
Does the eHL-30010A power supply support analog setpoint control?
Yes—it accepts 0–10 V analog inputs for beam voltage, current, and neutralizer bias, with 12-bit resolution and <0.1% linearity error.
What flange options are available for chamber integration?
Standard configurations include DN100 CF, ISO-K 160, and custom water-cooled conflat designs; all comply with ISO 1609 (Vacuum technology — Flanges).