OSI Optoelectronics
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| Brand | OSI Optoelectronics |
|---|---|
| Origin | USA |
| Detector Material | Germanium (Ge) |
| Spectral Range | 800–1800 nm |
| Cooling Options | Uncooled, Thermoelectric (TE), Liquid Nitrogen (LN₂) |
| Active Area Options | 0.25–13 mm² |
| Package Types | TO-8, TO-5, and Custom Mounts |
| Compliance | RoHS-compliant, CE-marked for lab instrumentation use |
| Key Performance Parameters | Shunt Resistance (1–2400 kΩ), Dark Current (0.03–100 µA), NEP (0.02–200 pW/Hz¹ᐟ²), Capacitance (0.03–12 nF), Cutoff Frequency (0.1–400 MHz), Reverse Bias Voltage (up to 400 V) |
| Brand | OSI Optoelectronics |
|---|---|
| Origin | USA |
| Product Type | Imported Spectroscopy Detector |
| Model Designation | SI-Series (including PIN, UV-Enhanced, Soft X-ray, Position-Sensitive, and APD variants) |
| Packaging | Ceramic or Plastic TO-18/TO-5 |
| Spectral Range | 350–1100 nm (standard Si), 6 eV–17.6 keV (soft X-ray), 254 nm (UV-enhanced), 820 nm peak (APD) |
| Response Time | 10 ns (photoconductive mode, biased), 0.4 ns (APD @850 nm, G=100) |
| Dark Current | ≤0.01 nA (standard PIN), <1 pA (low-noise variants) |
| Responsivity | 0.65 A/W (typ. @633 nm), 0.14 A/W @254 nm (UV-enhanced), 42 A/W @850 nm (APD, G=100) |
| Quantum Efficiency | >90% (UV-enhanced, back-illuminated), ~100% internal QE (inverted channel), high QE across soft X-ray band |
| Compliance | RoHS-compliant packaging |