Plasma-Therm
Filter
Showing all 3 results
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | PECVD / HDPCVD / RIE / ICP / DSE |
| Wafer Size Support | 2″ to 12″ |
| Automation Levels | Manual / Semi-Automatic / Full Cassette-to-Cassette Automation |
| Installed Base | >1,600 Systems Worldwide |
| Uniformity (PECVD) | ≤3% (1σ, across wafer) |
| Chamber Heating | Fully Ceramic-Encapsulated Uniform Thermal Control |
| Endpoint Detection | Real-Time Optical Emission Spectroscopy (OES) with Sub-Second Response |
| Gas Switching Speed | <500 ms (Patented Rapid Valve Architecture) |
| Pressure Control Resolution | ±0.01 mTorr (Patented Closed-Loop Digital Manifold) |
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | Imported Semiconductor CVD System |
| Model | PECVD Series |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication, MEMS, III-V & Wide-Bandgap Devices (GaAs, SiC, CPV), LED, SOI, TSV |
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Model | Takachi |
| Etch Principle | Inductively Coupled Plasma (ICP) |
| Etch Rate | SiO₂ ≥ 1500 Å/min |
| Selectivity | SiO₂ to Photoresist = 1.0–1.5:1 |
| Si₃N₄ to Photoresist = 1.0–1.2 | 1 |
| Uniformity | ≤ ±2% |
| Application Scope | Dielectrics (SiO₂, Si₃N₄, metal oxides), Polymers (photoresists, polyimides, BCB, SU-8), Semiconductors (Si, Ge, III–V compounds including GaAs, AlGaAs, GaN, InP), SiC |