Veeco
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| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Fiji G2 Plasma ALD |
| Substrate Size | Up to 200 mm |
| Process Temperature | 500°C for 200 mm wafers |
| Precursor Channels | Standard 4, upgradeable to 6 |
| Dimensions (W × H × D) | 1845 × 715 × 1920 mm |
| Uniformity (1σ) | Thermal Al₂O₃ – 1.5% |
| Power Supply | 220–240 VAC, 4200 W per reactor (excl. pumps) |
| Cycle Time | <2 s per cycle (Al₂O₃ at 200°C) |
| Precursor Source Capacity | 50 cc stainless steel ampoules (max. 25 mL fill) |
| Carrier/Plasma Gases | 100 sccm Ar (precursor), 500 sccm Ar (plasma), 100 sccm N₂, 100 sccm H₂, 100 sccm O₂ (all MFC-controlled) |
| Valve Response Time | ≤10 ms |
| Independent Precursor Heating | Up to 200°C |
| Maximum Sample Height | 57 mm |
| In-situ Options | QCM, spectroscopic ellipsometry, RGA port, optical emission spectroscopy (OES), ozone generator, LVPD, integrated glovebox, substrate biasing |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Firebird Batch Thermal ALD System |
| Substrate Compatibility | Seamless wafer size conversion up to 300 mm |
| Process Type | Thermal atomic layer deposition (ALD) |
| Throughput | Up to 40,000 wafers per month |
| Film Types | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), encapsulation layers, optical coatings |
| Chamber Architecture | Modular batch reactor with integrated thermal management |
| Compliance | Designed for semiconductor high-volume manufacturing (HVM) environments |
| Automation Level | Fully automated, recipe-driven operation |
| System Integration | Compatible with factory automation standards (SECS/GEM) |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | GEN10 |
| Configuration | Cluster-tool architecture with up to three material-specific growth chambers |
| Vacuum Integration | Ultra-high vacuum (UHV) integrated chamber system |
| Automation | Robotic wafer transfer for unattended operation |
| Application Scope | Research-grade III–V, II–VI, and elemental semiconductor epitaxy |
| Compliance Framework | Designed for GLP-compliant process documentation and ASTM F1529-22 compatible thin-film metrology workflows |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Phoenix G2 ALD System |
| Substrate Capacity | Up to 370 mm × 470 mm (Gen 2.5 Panels) |
| 100 mm wafers | 240–360 pcs/batch |
| 150 mm wafers | 80–160 pcs/batch |
| 200 mm wafers | 80–100 pcs/batch |
| 300 mm wafers | up to 40 pcs/batch |
| Process Temperature Range | Up to 285 °C |
| Precursor Lines | Standard 4-channel MFC-controlled delivery |
| Dimensions (W × H × D) | 900 mm × 1370 mm × 1700 mm |
| Uniformity | <1.5% (Al₂O₃ on single wafer), <1.0% (Al₂O₃ across full batch) |
| Power Requirement | 208 VAC, 3-phase, 8500 W (including vacuum pump) |
| Gas Control | N₂ or Ar carrier/purge with mass flow controllers (MFCs) |
| Optional In-situ Tools | Ozone generator, LVPD (low-voltage plasma source), integrated glovebox, semi-automated load/unload, SECS/GEM interface |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Savannah G2 ALD |
| Substrate Size | S100: up to 100 mm |
| S200 | up to 200 mm |
| S300 | up to 300 mm |
| Process Temperature | S100: RT–400 °C |
| S200/S300 | RT–350 °C |
| Precursor Ports | configurable up to 6 |
| Dimensions (W × H × D) | S100/S200: 585 × 560 × 980 mm |
| S300 | 686 × 560 × 980 mm |
| Uniformity (Al₂O₃) | <1% (1σ) |
| Cycle Time | <2 s per cycle (Al₂O₃ at 200 °C) |
| Power Supply | 115/220 VAC, 1900 W (S100/S200), 2000 W (S300) |
| Precursor Vessels | 50 mL heated stainless-steel ampoules (heatable to 200 °C) |
| Carrier/Exhaust Gas | N₂, 100 SCCM |
| Valve Response Time | 10 ms |
| Compatible Precursor States | solid, liquid, or gaseous |
| In-situ Options | QCM, spectroscopic ellipsometry, RGA, LVPD, ozone generator, SAMs module, plasma enhancement, glovebox integration |