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| Origin | Sichuan, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (China) |
| Model | URE-2000 Series |
| Price Range | USD 42,000 – 70,000 |
| Scanning Throughput | 2 µm feature resolution |
| Resolution | 0.8 µm (with 2 µm positive photoresist) |
| Detection System Type | UV Optical Detection |
| Excitation Wavelength | 365 nm (i-line) |
| Emission Wavelength | 365 nm |
| Exposure Area | Up to 200 mm × 200 mm (URE-2000/A8) |
| Exposure Time Range | 0.1 s – 9999.9 s (programmable timer) |
| Mercury Lamp Power | 1000 W (DC, Osram Ultra-High-Pressure Hg Lamp) |
| Illumination Uniformity | ≤2.5% (Ø100 mm), ≤5% (Ø200 mm) |
| Alignment Accuracy | ±0.8 µm (single-side), ±2 µm (double-side, 0.8 mm wafer thickness) |
| Maximum Resist Thickness | 500 µm (SU-8, user-provided conditions) |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SI500 ICP-RIE Plasma Etching System |
| Price Range | USD 68,000 – 136,000 (FOB Hamburg) |
| Temperature Control Range | −120 °C to +150 °C |
| Plasma Source | Inductively Coupled Plasma (ICP) with Separate Bias RF (13.56 MHz) |
| Etch Chemistry Compatibility | Fluorine-based (SF₆, CF₄, CHF₃), Chlorine-based (Cl₂, BCl₃), Oxygen, Argon, and mixed gas chemistries |
| Chamber Material | Anodized aluminum with quartz or ceramic liner options |
| Maximum Wafer Size | 200 mm (8-inch) |
| Vacuum System | Turbo-molecular pump with backing pump (base pressure <5×10⁻⁷ mbar) |
| Process Control | Fully computerized via SENTECH EtchControl™ v4.x with recipe management, real-time parameter logging, and audit trail support |
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