Semiconductor Instruments
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| Brand | Acculogic |
|---|---|
| Origin | Canada |
| Model | SCORPION iCT7000 |
| Maximum Test Points | 8192 |
| Board Size Capacity | 350 mm × 400 mm |
| Fixture Change Time | < 60 s |
| Operating System | Windows-based |
| Embedded Network Analyzer | Yes |
| Software Compatibility | Flying Probe Tester (FPT) software formats |
| Power Integration | Up to 4 external high-performance programmable power supplies |
| Compliance | Designed for IPC-A-610, IPC-J-STD-001, and ISO 9001-aligned manufacturing environments |
| Interface Protocol | SMEMA-compatible (via optional iTH7000 handler integration) |
| Brand | Acona |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Domestic |
| Model | Acona 7000 AD |
| Price Range | USD $1,400 – $98,000 |
| Brand | Acona |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Domestic |
| Model | Acona A7000 APS |
| Price Range | USD 1,400 – 140,000 |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Model | 6110 |
| Spindle Power | 2.2 kW |
| Max Spindle Speed | 60,000 rpm |
| Spindle Torque | 0.42 N·m |
| θ-Axis Drive | Direct-Drive (DD) Motor |
| Machine Width | 490 mm |
| Control Interface | 17-inch LCD Touchscreen GUI |
| Standard Features | Auto-Calibration, Auto-Cutting, Blade-Trace Inspection |
| Optional Features | Fragment Shape Recognition, One-Touch Position Verification |
| Sample Compatibility | Si, SiC, GaAs, Glass, Ceramic, Solar Wafers |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Region of Manufacture | Domestic (China) |
| Model | 7234 |
| Pricing | Upon Request |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Model | 7920 |
| Blade Diameter Range | 2"–3" |
| Maximum Spindle Speed | 60,000 rpm |
| Spindle Power | 1.2 kW per axis |
| Workpiece Capacity | Ø12" or 12" × 10" |
| X-Axis | Pneumatic Linear Slide |
| Y-Axis Resolution | 0.1 µm |
| Z1/Z2-Axis Resolution | 0.2 µm |
| Z1/Z2 Travel | 30 mm |
| Z1/Z2 Repeatability | ±1.0 µm |
| θ-Axis Repeatability | ±4 arc-sec |
| θ-Axis Travel | 350° |
| Cumulative Positioning Accuracy | ±1.5 µm |
| Step Positioning Accuracy | ±1.0 µm |
| Electrical Supply | 200–240 VAC, 50–60 Hz, Single-Phase |
| Dimensions (W×D×H) | 875 × 975 × 1450 mm |
| Weight | 900 kg |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Regional Classification | Domestic (China) |
| Model | 8230 |
| Pricing | Available Upon Request |
| Brand | ADT |
|---|---|
| Model | WCS-977 |
| Type | Wet Process Wafer Cleaning Equipment |
| Chamber Capacity | 6-inch and 8-inch wafers |
| Dimensions (W×D×H) | 410 × 625 × 980 mm |
| Power Supply | 230 VAC, 50 Hz, 5 A |
| CDA Pressure | 0.5–0.6 MPa |
| CDA Consumption | ≤3 m³/h |
| DI Water Pressure | 0.2–0.3 MPa |
| DI Water Consumption | ≤100 L/h |
| Rotation Speed Range | 500–3000 rpm |
| Vacuum Source | Integrated vacuum generator |
| CO₂ Injection | Membrane contactor-based ultra-pure CO₂ dissolution into DI water |
| Control System | Programmable Logic Controller (PLC) with recipe storage and real-time process monitoring |
| Safety | Interlocked access door, status indicator lights, emergency stop circuit |
| Construction | Internal 316L stainless steel chamber, exterior powder-coated steel housing |
| Compliance | Designed for Class 100 cleanroom integration, compatible with SEMI S2/S8 safety guidelines |
| [Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | APD |
| Vacuum Chamber Dimensions | 400 × 400 × 300 mm (L×W×H) |
| Pumping System | 450 L/s Turbomolecular Pump |
| Plasma Source | Up to 3 Configurable Arc Cathodes |
| Operating Pressure Range | High Vacuum to Low-Pressure Reactive Gases (N₂, O₂, H₂, Ar) |
| Target Geometry | Cylindrical or Tubular, Ø10 mm × 17 mm |
| Target Resistivity | < 0.01 Ω·cm |
| Energy Storage Capacitance | 360 µF × 5 (Optional Expansion) |
| Pulse Frequency | 1–5 Hz |
| Discharge Voltage | 70–400 V (Max 150 V at 1800 µF) |
| Human-Machine Interface | Integrated Touchscreen Control Panel |
| Powder Collection Module (APD-P) | Ø95 mm × 30 mm Vessel, 1–50 rpm Rotation, Yield: 13–20 cm³/h (Density- and Size-Dependent) |
| Thin-Film Configuration (APD-S) | Uniform Deposition on 2-inch Substrates] |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | CAS-AYII |
| Instrument Type | Non-Vacuum Rapid Thermal Annealing System |
| Sample Dimensions | 70 mm (W) × 220 mm (L) × 0.5–2.0 mm (T) |
| Temperature Range | 50 °C to 1000 °C (max. 1150 °C) |
| Max. Heating Rate | 30 °C/s |
| Max. Cooling Rate | −70 °C/s (from 1000 °C to 400 °C) |
| Annealing Temperature Accuracy | High |
| Annealing Temperature Uniformity | High |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | HT-RTA59HD |
| Instrument Type | High-Vacuum Rapid Thermal Annealer (RTA) |
| Sample Size | 15 mm × 15 mm × 1 mm |
| Temperature Range | Ambient to 1800 °C |
| Max Heating Rate | ≥1500 °C/s (typical for 15 mm × 15 mm SiC wafer) |
| Cooling Method | Optional integrated water-quench (CAS-59AQ variant) |
| Heating Source | High-power focused infrared halogen lamps |
| Atmosphere Options | Vacuum (≤10⁻⁴ Pa), inert gas (N₂, Ar), or oxidizing (O₂) |
| Thermocouple Compatibility | JIS B standard sheathed thermocouples (W–Re optional) |
| Chamber Liner Material | High-purity alumina or graphite |
| Control Interface | USB-connected PC-based temperature programming and real-time thermal monitoring |
| Brand | Advance Riko |
|---|---|
| Origin | Japan |
| Model | HT-RTA59HD |
| Instrument Type | Non-vacuum Rapid Thermal Annealer |
| Sample Dimensions | 15 mm × 15 mm × 1 mm |
| Temperature Range | Ambient to 1800 °C |
| Maximum Heating Rate | 1800 °C in ≤10 s (for 15 mm × 15 mm sample) |
| Cooling Rate | 180 °C/s |
| Temperature Accuracy | High |
| Temperature Uniformity | High |
| Heating Method | High-intensity infrared lamp array with optimized reflective cavity |
| Sample Holder Material | Alumina or high-purity graphite |
| Thermocouple Compatibility | JIS B standard φ0.3 mm (W-Re optional) |
| Interface | USB-connected PC control and real-time temperature monitoring |
| Optional Quench Configuration | CAS-59AQ water-quench module |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | Mila-5000 Series |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Vacuum Level (Mila-5000UHV) | ≤1×10⁻⁵ Pa |
| Max Heating Rate | Up to 50 °C/s |
| Cooling Method | Integrated Water-Cooled Chamber |
| Atmosphere Options | Vacuum, Inert Gas (N₂, Ar), Ambient Air, Controlled Flow Gas |
| Sample Environment | O-Ring Sealed Quartz Tube |
| Real-Time Monitoring | Top-Mount Optical Viewport + Optional USB Camera Integration |
| Temperature Control | Built-in Programmable PID Controller with Dual Display (Setpoint vs. Actual) |
| Interface | USB 2.0 for PC-Based Program Configuration and Data Logging |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | MILA-5000 |
| Instrument Type | General-Purpose Vacuum Rapid Thermal Annealer |
| Sample Size | 2-inch wafer |
| Temperature Range | 0–1200 °C |
| Max. Heating Rate | 150 K/s |
| Max. Cooling Rate | 200 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across sample surface |
| Atmosphere Options | Vacuum (down to 10⁻⁵ Pa for MILA-5000UHV variant), N₂, Ar, O₂, forming gas, ambient air |
| Heating Source | High-intensity infrared gold-coated halogen lamps |
| Cooling Method | Integrated water-cooled chamber base and forced convection |
| Control Interface | USB-connected PC software + front-panel programmable controller |
| Real-time Monitoring | Top-mounted quartz viewport with optional high-speed camera integration |
| Electrical Measurement Compatibility | Built-in 4-point probe interface for in-situ resistivity monitoring |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | MILA-5000 |
| Instrument Type | General-Purpose Vacuum Rapid Thermal Annealer |
| Sample Diameter | 2-inch (50.8 mm) |
| Temperature Range | 0–1200 °C |
| Maximum Heating Rate | 150 K/s |
| Maximum Cooling Rate | 200 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | MILA-5000 Series |
| Instrument Type | High-Vacuum Rapid Thermal Annealer |
| Sample Size | 2-inch wafer |
| Temperature Range | Ambient to 1200 °C |
| Max. Heating Rate | 50 °C/s |
| Cooling Rate | 30 °C/s |
| Temperature Accuracy | ±2.0 °C |
| Temperature Uniformity | ±2.0 °C |
| Base Vacuum (MILA-5000UHV) | 1×10⁻⁵ Pa |
| Atmosphere Options | Vacuum, N₂, Ar, O₂, forming gas, ambient air |
| Heating Source | Gold-coated infrared halogen lamps |
| Cooling Method | Integrated water-cooled chamber base |
| Control Interface | USB-connected PC software + front-panel touchscreen |
| Real-time Monitoring | Top quartz viewport + optional integrated CCD camera system |
| Optional Integration | Four-point probe resistivity measurement module |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | Mila-5050 |
| Sample Diameter | 50 mm (2 inch) |
| Temperature Range | 25–1200 °C |
| Max. Heating Rate | 50 °C/s |
| Cooling Rate | 20 °C/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across sample zone at 1000 °C |
| Vacuum Capability | Standard configuration supports low-vacuum rapid thermal processing |
| Control Interface | USB-connected PID temperature controller with real-time monitoring and programmable ramp/soak profiles |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | RHL-P Series |
| Sample Size | 1.2-inch (30.5 mm) wafers |
| Temperature Range | RT to 1350 °C |
| Max. Heating Rate | 50 °C/s |
| Max. Cooling Rate | 30 °C/s |
| Temperature Accuracy | ±3 °C |
| Temperature Uniformity | ±3 °C |
| Chamber Dimensions (varies by model) | Ø20 mm × 80 mm to Ø50 mm × 80 mm |
| Cooling Requirement | External recirculating water chiller (required) |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | RTP-6 |
| Instrument Type | Standard Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 6-inch wafer |
| Temperature Range | RT to 1000 °C |
| Maximum Ramp Rate | 80 °C/s |
| Annealing Temperature Accuracy | ±0.5 °C |
| Temperature Uniformity | ±10 °C |
| Cooling | Water-cooled chamber (forced convection cooling enabled via optional chiller) |
| Heating Zones | 9 independently controlled zones |
| Atmosphere Control | Vacuum + continuous gas flow (N₂, O₂, forming gas, Ar, etc.) |
| Optional Accessories | Quartz shielding plate, pyrometer (for non-contact temperature monitoring), vacuum pump, recirculating water chiller |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Cross-Plane Thermal Conductivity) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (total thickness, including substrate) |
| Substrate Options | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ISO/IEC 17025-aligned methodology, compatible with GLP documentation workflows |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Frequency-Doubled Resistive Heating + Surface Thermal Reflectance Detection) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (T, including substrate) |
| Substrate Materials | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ASTM E1461 (modified), ISO 22007-2 (principle-aligned), GLP-ready data traceability |
| Brand | AdvR |
|---|---|
| Model | PPKTP |
| Substrate Material | KTP (KTiOPO₄) |
| Poling Period Range | 3.5–22 µm (customizable) |
| Operating Wavelength Range | 350–5000 nm |
| Nonlinear Interaction Types | Type-0, Type-I, Type-II phase matching |
| Primary Applications | SHG, SFG, DFG, SPDC |
| Waveguide Configuration | Ti-indiffused or proton-exchanged ridge/strip waveguides |
| Input/Output Options | Fiber-pigtailed (SMF-28, PM fiber), free-space collimated input/output |
| Max. Continuous Pump Power | ≤500 mW (standard), ≤2 W (high-power variant) |
| Conversion Efficiency | Up to 300 %/W (internal, 1560 nm → 780 nm) |
| Operating Temperature Range | 20–80 °C (thermally stabilized options available) |
| Compliance | RoHS-compliant packaging, ISO 9001-certified manufacturing process |
| Customization | Period, length, AR coating (R < 0.2% @ specified λ), polarization handling, thermal tuning design |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL-3000Plus |
| Substrate Size | 4-inch (100 mm) |
| Process Temperature Range | 350–800 °C |
| Number of Precursor Lines | 6 |
| Vacuum Base Pressure | ≤5 Pa |
| Film Thickness Uniformity | ≤3% @ 100 mm |
| System Dimensions (W × H × D) | 835 × 1644 × 700 mm |
| Weight | 160 kg |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL1000 Series |
| Substrate Size | 4-inch (φ100 mm) |
| Process Temperature | Up to 350 °C |
| Precursor Channels | 2 |
| Uniformity | ≤3% (1σ, across 4-inch wafer) |
| Vacuum Base Pressure | ≤5 Pa |
| Dimensions (W×H×D) | 582 × 450 × 410 mm |
| Weight | 50 kg |
| Optional Accessories | Powder deposition stage (0–45° tilt, 5 cm³ capacity), ozone generator, N₂ purge module, glovebox integration kit, precursor heaters (up to 200 °C), dry vacuum pump, exhaust abatement unit |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Size | Ø100 mm (4-inch) |
| Process Temperature Range | 350–800 °C |
| Precursor Channels | 6 |
| Uniformity | ≤3% (at Ø100 mm) |
| Dimensions (W × H × D) | 1418 × 1728 × 840 mm |
| Weight | 200 kg |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Compatibility | Up to φ100 mm (4-inch) |
| Maximum Precursor Channels | 6 |
| Uniformity | ≤3% @ 100 mm |
| Process Temperature Range | Ambient to 800 °C (with optional heater) |
| Precursor Temperature Control | Up to 200 °C |
| Vacuum System | Dry Pump Compatible |
| Exhaust Treatment | Optional Scrubber Integration |
| Software | Touchscreen GUI with ≥30 Programmable Recipes |
| System Architecture | Integrated Mainframe and Control Enclosure |
| Brand | Ahkemi |
|---|---|
| Origin | Anhui, China |
| Model | TFE-1200-50-I-220 |
| Maximum Operating Temperature | 1150 °C (short-term), 1100 °C (rated) |
| Temperature Control Accuracy | ±1 °C |
| Heating Zone Length | 220 mm |
| Uniform Temperature Zone Length | 80 mm |
| Tube Dimensions | Φ30/50/60 × 1200 mm |
| Furnace Chamber Diameter × Height | Φ80 × 220 mm |
| RF Power Range | 5–500 W |
| RF Frequency | 13.56 MHz |
| Gas Delivery | 3-channel MFC-controlled (0–500 sccm per channel, customizable) |
| Vacuum System | Dual-stage rotary vane pump (optional diffusion or turbomolecular pump upgrade) |
| Rated Heating Power | 3 kW |
| Recommended Ramp Rate | ≤10 °C/min |
| External Dimensions | 1250 × 510 × 810 mm |
| Brand | Aisida |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | TDR-200 Series |
| Pricing | Available Upon Request |
| Impedance Range | 20–150 Ω |
| Measurement Accuracy | ±1% at 50 Ω |
| Measurement Length | 0.09–2.0 m |
| Horizontal Resolution | 0.2 mm |
| Vertical Resolution | 0.05 Ω |
| Test Method | Time-Domain Reflectometry (TDR) |
| Standards Compliance | IPC-TM-650 2.5.1, IPC-2141A |
| Channel Options | 2-, 4-, or 8-channel configurations |
| Interface | Windows-based GUI with integrated test file editor |
| Brand | aixACCT Systems GmbH |
|---|---|
| Model | ESPY31 |
| Origin | Germany |
| Core Principle | Direct quasi-static force–charge transduction under controlled mechanical loading |
| Measurement Standards | Traceable to PTB (Physikalisch-Technische Bundesanstalt) calibration protocols |
| Key Specifications | d₃₁/d₃₂ range: 0.05–2000 pC/N |
| Force resolution | 0.1 mN (static/dynamic) |
| Current resolution | 100 fA |
| Charge accuracy | sub-pC |
| Repeatability (PVDF) | < 0.03 pC/N (1σ) |
| Reproducibility (PVDF) | < 0.1 pC/N |
| Frequency range | 0.1–500 Hz |
| Static preload | 0.1–5 N |
| Dynamic load | 0–1000 mN |
| Sample dimensions | 4.5 mm × 2 mm, thickness 10 µm–1 mm |
| Environmental operation | −20 °C to +80 °C, 10–85 % RH |
| Compliance | ASTM D790, ISO 6722, IEC 62047-23, USP <1051>, GLP-compliant data audit trail |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 1000 |
| Voltage Range | ±12 V (expandable to ±10 kV) |
| Frequency Range | 0.01 Hz – 1 kHz |
| Fatigue Test Frequency | up to 50 kHz |
| Minimum Pulse Width | 20 µs |
| Output Impedance | 50 Ω |
| Max Capacitive Load | 100 nF |
| Output Current | ±50 mA |
| Current Amplification Range | 1 nA – 1 A |