Semiconductor Instruments
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| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 1000 |
| Voltage Range | ±12 V (expandable to ±10 kV) |
| Frequency Range | 0.01 Hz – 1 kHz |
| Fatigue Test Frequency | up to 50 kHz |
| Minimum Pulse Width | 20 µs |
| Output Impedance | 50 Ω |
| Max Capacitive Load | 100 nF |
| Output Current | ±50 mA |
| Current Amplification Range | 1 nA – 1 A |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 2000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Hysteresis Frequency | 0.001 Hz – 5 kHz |
| Minimum Pulse Width | 2 µs |
| Minimum Rise Time | 1 µs |
| Current Measurement Range | 1 pA – 1 A |
| Maximum Load Capacitance | 1 µF |
| Peak Output Current | ±1 A |
| Module Options | FE (Ferroelectric), MR (Magnetoresistive), RX (Relaxation Current), DR (Dielectric Retention) |
| Channel Capacity | 256-channel automated testing |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 2000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Hysteresis Frequency | 0.001 Hz – 5 kHz |
| Minimum Pulse Width | 2 µs |
| Rise Time | ≤1 µs |
| Current Measurement Range | 1 pA – 1 A |
| Max Capacitive Load | 1 µF |
| Peak Output Current | ±1 A |
| Module Options | FE (Ferroelectric), MR (Magnetoresistive), RX (Relaxation Current), DR (Dielectric Retention) |
| Channel Count | 256-channel automated testing capability |
| Operating System | Windows 7 embedded |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 3000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Hysteresis Frequency | up to 1 MHz (High-Speed FE Module) |
| Minimum Pulse Width | 50 ns |
| Minimum Rise Time | 10 ns |
| Maximum Fatigue Frequency | 16 MHz |
| Current Amplification Range | 1 pA to 1 A |
| Max Load Capacitance | 1 nF |
| Peak Output Current | ±1 A |
| Software Platform | aixPlorer v5.x (Windows 7/10 compatible) |
| Compliance | ASTM D991, IEC 62047-18, ISO/IEC 17025-ready architecture |
| Modularity | FE, MR, RX, DR modules |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 3000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Hysteresis Frequency | up to 1 MHz (high-speed FE module) |
| Minimum Pulse Width | 50 ns |
| Minimum Rise Time | 10 ns |
| Fatigue Test Frequency | up to 16 MHz |
| Current Measurement Range | 1 pA – 1 A |
| Maximum Load Capacitance | 1 nF |
| Output Current Peak | ±1 A |
| Software Platform | aixPlorer v7.x (Windows 7-based) |
| Compliance | GLP/GMP-ready architecture, ASTM E2941-22 compatible, supports 21 CFR Part 11 audit trails (with optional software license) |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 3000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Dynamic Hysteresis Frequency | up to 1 MHz (High-Speed FE Module) |
| Minimum Pulse Width | 50 ns |
| Minimum Rise Time | 10 ns |
| Maximum Fatigue Frequency | 16 MHz |
| Current Amplification Range | 1 pA – 1 A |
| Max Capacitive Load | 1 nF |
| Output Current Peak | ±1 A |
| Software Platform | aixPlorer v7.x (Windows 7-based) |
| Compliance | ASTM D991, IEC 62047-18, ISO/IEC 17025-ready architecture |
| Channel Count | 256-channel automated testing capability |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 3000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Hysteresis Frequency | up to 1 MHz (High-Speed FE Module) |
| Minimum Pulse Width | 50 ns |
| Minimum Rise Time | 10 ns |
| Maximum Fatigue Frequency | 16 MHz |
| Current Amplification Range | 1 pA to 1 A |
| Max Load Capacitance | 1 nF |
| Peak Output Current | ±1 A |
| Software Platform | aixPlorer v5.x (Windows 7/10 compatible) |
| Compliance | ASTM D991, IEC 62047-18, ISO/IEC 17025-ready architecture |
| Modularity | FE, MR, RX, DR modules |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |
| Brand | Aiyao Instruments |
|---|---|
| Origin | Taiwan |
| Model | XW-A300 |
| Measurement Principles | Spectral Interferometry (IR), White-Light Interferometry (WLI), Optical Reflectometry |
| Sample Compatibility | 4″–12″ wafers |
| Probe Configuration | Single or Dual (top/bottom) |
| Compliance | SEMI S2/S8 |
| Motion Platform | Air-bearing vibration-isolated stage |
| Software | WaferSpect™ with full mapping, statistical analysis, and GLP-compliant audit trail |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Type | Imported Chemical Reagent |
| Product Line | AR-N (Negative Tone), AR-P (Positive Tone), CAR (Chemical Amplified Resist), E-Beam Resists |
| Compliance | ISO 9001-certified manufacturing, compatible with standard cleanroom protocols (Class 100/ISO 5) |
| Packaging Options | 30 mL, 100 mL, 250 mL, 1 L, 2.5 L |
| Storage | Light-sensitive, refrigerated (2–8 °C), nitrogen-purged sealed containers |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Semiconductor Process Chemicals |
| Model Range | AR Series |
| Pricing | Upon Request |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AR-N 4400 |
| Pricing | Available Upon Request |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AR-N 4600 (Atlas 46) |
| Pricing | Available Upon Request |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Model | AR-N7700 |
| Type | Chemically Amplified Negative Tone Resist |
| Exposure Modalities | Electron Beam (e-beam), Deep Ultraviolet (248 nm) |
| UV Transparency Range | 248–265 nm & 290–330 nm |
| Etch Resistance | High (Compatible with CF₄, CHF₃, O₂-based Plasma Etching) |
| Packaging | 100 mL amber glass bottles under nitrogen purge |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | AR-P 610 Series |
| Pricing | Upon Request |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Model | AR-P 6200 |
| Product Type | Positive-tone e-beam resist |
| Key Variants | AR-P 6200.09 (standard), AR-P 6200.13 (thick-film), AR-P 6200.18 (ultra-thick), AR-P 6200.04 (low-temperature optimized) |
| Developer Compatibility | AR 600-546, AR 600-548, AR 600-55, AR 600-50/2 |
| Acceleration Voltage Range | 1–100 kV |
| Film Thickness Range | 50 nm – 1.5 µm |
| Sensitivity (AR-P 6200.09, 30 kV, AR 600-546) | ~55 µC/cm² (D₀), ~220 pC/cm² (10 nm trenches) |
| Contrast (γ) | 14.2 |
| Resolution | ≤6 nm (at 6 °C, optimized process) |
| Plasma Etch Resistance | High (CF₄ + O₂), superior to PMMA (AR-P 679.03) and ZEP 520A |
| Post-Exposure Bake (PEB) | Not required |
| Lift-off Capability | ≤20 nm metal lines, defined undercut tunable via dose |
| Two-Layer Compatibility | Validated with AR-P 617 series (e.g., AR-P 617.06) |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Product Type | Conductive Spin-Coatable Anticharging Coating for E-beam Lithography & SEM/FIB Imaging |
| Model | AR-PC 5090.02, AR-PC 5091.02 |
| Film Thickness | ~40 nm at 4000 rpm |
| Developer | Deionized Water |
| UV/E-beam Insensitivity | Yes |
| Compatibility | AR-PC 5090.02 — PMMA, CSAR 62, HSQ |
| Solubility Post-Exposure | Aqueous |
| Brand | Allresist |
|---|---|
| Origin | UK |
| Model | PMMA Electra 92 (AR-PC 50) |
| Formulation | Aqueous/isopropanol solution of polyaniline derivative |
| Application | Charge-dissipative topcoat for non-novolac e-beam resists |
| Removal | Post-exposure aqueous rinse |
| Compliance | Compatible with standard e-beam lithography workflows (JEOL, Raith, Zeiss systems) |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Model | SX AR-PC 5000/41 |
| Type | Acid-Resistant, Non-Photosensitive Protective Resist |
| Compatibility | KOH (40% w/w), HF (50% w/w) |
| Processing | Spin-Coatable |
| Regulatory Status | Import Product for Semiconductor Fabrication |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | AL8 |
| Plasma Source | 2.45 GHz microwave, 600 W |
| Chamber Volume | 18 L (250 × 250 × 290 mm, aluminum) |
| External Dimensions | 530 × 600 × 550 mm |
| Gas Delivery | 1 standard mass flow-controlled line (MKS digital controller) |
| Vacuum Door | Hinged with UV- and microwave-shielded viewport |
| Control Interface | 7" GUI touchscreen, Windows CE OS |
| Optional | Dry pump system, tri-color status tower light, up to 4 gas lines, ECR-enhanced plasma source, motorized rotating stage (Ø200 mm, variable speed) |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | AL8 |
| Plasma Source | 2.45 GHz microwave, 600 W |
| Chamber Volume | 18 L (250 × 250 × 290 mm, aluminum) |
| External Dimensions | 530 × 600 × 550 mm |
| Gas Delivery | 1 standard mass flow-controlled line (MKS digital controller) |
| Vacuum Door | Hinged with UV- and microwave-shielded viewport |
| Control Interface | 7" GUI touchscreen, Windows CE OS |
| Optional | Dry pump system, tri-color status tower light, up to 4 gas lines, motorized φ200 mm rotating stage, ECR enhancement module |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | AL76 |
| Plasma Source | 2.45 GHz microwave, 1200 W |
| Chamber Volume | 76 L (400 × 400 × 490 mm, aluminum) |
| External Dimensions | 1050 × 800 × 2020 mm (incl. signal tower) |
| Gas Inlets | 3 standard mass flow-controlled lines (MKS digital controllers) |
| Door Type | Dual-mode hinged/drawer with UV- and microwave-shielded viewport |
| Control Interface | 10.4" resistive touchscreen, Windows CE OS |
| Optional | Dry pump package, tri-color signal tower, up to 4 gas lines, φ350 mm motorized rotating stage, ECR enhancement module |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | AL76 |
| Plasma Source | 2.45 GHz microwave, 1200 W |
| Chamber Volume | 76 L (400 × 400 × 490 mm, aluminum) |
| External Dimensions | 1050 × 800 × 2020 mm (incl. tri-color status tower) |
| Gas Inlets | 3 standard mass flow-controlled lines (MKS digital controllers) |
| Optional | 4th gas line, ECR enhancement, φ350 mm adjustable-speed rotating stage, dry pump package, UV/microwave-shielded viewport, hinged + drawer-type vacuum door |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q150, Q235, Q240, Q310 |
| Type | Microwave-excited Capacitively Coupled Plasma (CCP) Resist Stripping System |
| Application Domain | Semiconductor Front-End-of-Line (FEOL) & Back-End-of-Line (BEOL) Process Cleaning |
| Compliance | CE-marked, SEMI S2-0216 Certified, ISO 9001:2015 Manufactured |
| Footprint Options | Benchtop (Q150), Semi-automated Loadlock (Q235/Q240), Full-automated Cluster Tool Integration Capable (Q310) |