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| Brand | TESCAN |
|---|---|
| Origin | Czech Republic |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported High-Energy Ion Implanter |
| Model | Quiin |
| Product Type | Dual-Beam FIB-SEM with Integrated Quantum-Scale Ion Implantation Capability |
| Application Domain | IC Fabrication, Quantum Device Engineering, Advanced Materials Modification |
| Electron Source | Schottky Field-Emission Gun (e-CLIPSE), Lifetime ≥ 2 years |
| Electron Beam Landing Energy | 500 eV – 30 keV |
| Electron Probe Current | ~pA to >100 nA |
| FIB Sources | iVeloce (ECR plasma source, Xe/O₂/Ar/He/N₂), Veloce (Liquid Metal Ion Source, Ga⁺/Ge⁺/Au⁺/Au₃⁺/Si⁺/Au clusters) |
| Ion Beam Energy Range | 3–30 keV |
| Minimum Measurable Ion Current | 20 fA |
| Maximum Probe Current | 1 µA (iVeloce), 50 nA (Veloce) |
| FIB Resolution | 5 nm @ 30 keV (Veloce), 40 nm @ 30 keV (iVeloce) |
| SEM Resolution | 4 nm @ 25 keV |
| Working Distance | 12 mm |
| Beam Intersection Angle | 55° |
| In-situ Heating Stage (FurnaSEM 1000) | Max Temp = 950°C, Ramp Rate = 0.01–3 °C/s, Area = 50 × 30 mm |
| GIS | Energis system with 3 precursor reservoirs (e.g., Pt, W, C, SiOₓ, H₂O, XeF₂) |
| Software Platform | Pegasus GUI & API |
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