SrRuO3 Sputtering Target
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (China) |
| Model | SrRuO3 Target |
| Pricing | Available Upon Request |
| Standard Dimensions | Ø25.4 × 6.35 mm |
| Purity | >99.9% (3N) |
| Relative Density | >80% TD |
Overview
The SrRuO3 Sputtering Target is a high-purity ceramic oxide target engineered for physical vapor deposition (PVD), specifically magnetron sputtering, to fabricate epitaxial or polycrystalline SrRuO3 thin films. As a perovskite-type transition-metal oxide with metallic conductivity, ferromagnetic ordering (TC ≈ 160 K), and strong spin–orbit coupling, SrRuO3 serves as a critical functional layer in advanced oxide heterostructures—particularly as a conducting bottom electrode for ferroelectric capacitors (e.g., Pb(Zr,Ti)O3, BiFeO3), a spin-filter interface in spintronics, and a model system for studying correlated electron phenomena. This target is synthesized via solid-state reaction under controlled oxygen partial pressure, followed by hot isostatic pressing (HIP) or cold isostatic pressing (CIP) with subsequent high-temperature sintering to achieve structural homogeneity and minimized secondary phase formation.
Key Features
- High chemical purity (>99.9%, 3N grade) with trace metal impurities (e.g., Fe, Ni, Cr) rigorously controlled below 10 ppm—critical for minimizing interfacial defect states in oxide heteroepitaxy.
- Density >80% theoretical density (TD), optimized to balance mechanical integrity during sputtering and sufficient grain boundary continuity for stable plasma coupling and uniform erosion profiles.
- Multiple standardized geometries available—including Ø25.4 × 6.35 mm (1-inch), Ø35 × 6.0 mm, Ø50.8 × 3.0 mm (2-inch), and Ø60 × 4.0 mm—to accommodate both laboratory-scale RF/DC magnetron systems and industrial inline coaters.
- Polished front surface (Ra < 0.8 µm) and chamfered edges to reduce arcing risk and improve plasma stability during reactive or high-power sputtering.
- Batch-certified material composition verified by X-ray fluorescence (XRF) and inductively coupled plasma mass spectrometry (ICP-MS); full traceability documentation provided with each shipment.
Sample Compatibility & Compliance
This SrRuO3 target is compatible with standard DC, pulsed DC, and RF sputtering configurations. It performs reliably on substrates including single-crystal SrTiO3, LaAlO3, MgO, and Si/SiO2 wafers—especially when used with substrate heating (500–750 °C) and oxygen partial pressure control (1–10 mTorr) to maintain stoichiometric film growth. All targets comply with RoHS Directive 2011/65/EU for hazardous substance restrictions. While not certified to ISO 9001 at the distributor level, raw material sourcing and sintering processes adhere to internal quality protocols aligned with ISO/IEC 17025–referenced analytical validation practices. Documentation supports GLP-compliant thin-film process development in academic and industrial R&D environments.
Software & Data Management
As a passive consumable component, the SrRuO3 target does not incorporate embedded electronics or firmware. However, its performance integration is fully supported within industry-standard thin-film deposition control platforms—including those from Angstrom Engineering, Kurt J. Lesker, and PVD Products—enabling precise logging of sputter time, power history, pressure profiles, and target utilization metrics. Users may import batch-specific certificates of analysis (CoA) into LIMS or ELN systems (e.g., LabArchives, Benchling) for audit-ready traceability. No proprietary software or drivers are required.
Applications
- Growth of epitaxial SrRuO3 electrodes for ferroelectric memory (FeRAM) and piezoelectric MEMS devices.
- Deposition of metallic oxide interlayers in multiferroic heterostructures (e.g., SrRuO3/BiFeO3/SrRuO3).
- Preparation of atomically sharp interfaces for spin-charge conversion studies (e.g., inverse spin Hall effect in Pt/SrRuO3 bilayers).
- Model system fabrication for scanning probe microscopy (SPM) and angle-resolved photoemission spectroscopy (ARPES) investigations of correlated electron behavior.
- Process qualification and tool matching across multi-user cleanroom facilities requiring reproducible oxide electrode performance.
FAQ
What is the recommended base pressure and working gas composition for optimal SrRuO3 film stoichiometry?
Base pressure should be ≤5 × 10−8 Torr; sputtering is typically performed in Ar/O2 mixtures (e.g., 90:10 to 95:5) at total pressures of 3–8 mTorr, with substrate temperature maintained between 600–700 °C for epitaxial growth on SrTiO3.
Can this target be used in RF sputtering mode without significant impedance mismatch?
Yes—due to its moderate resistivity (~10−4 Ω·cm bulk) and dense microstructure, the target operates efficiently under RF (13.56 MHz) excitation; impedance matching networks require standard tuning but no specialized hardware.
Is post-sputtering annealing necessary to restore crystallinity or stoichiometry?
Annealing in O2 ambient (e.g., 500 °C, 30 min) is often applied to as-deposited amorphous or oxygen-deficient films, particularly on Si-based substrates; however, in situ heated deposition on single-crystal oxides frequently yields fully crystalline, stoichiometric films without post-anneal.
How is target lifetime estimated, and what signs indicate end-of-life?
Lifetime correlates with sputter rate (typically 0.5–2.0 nm/min under 100–200 W DC), geometry, and cooling efficiency. Visual indicators include pronounced racetrack groove depth (>50% of initial thickness), increased arcing frequency, or measurable increase in film resistivity deviation (>15% from baseline).
