Non-polar GaN Crystal Substrates (合肥科晶 | Model: GaN)
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model | GaN |
| Pricing | Upon Request |
| Crystal Orientation | A-plane (11-20) ±1° or M-plane (1-100) ±1° |
| Conductivity Type | n-type or semi-insulating |
| Resistivity | <0.5 Ω·cm (n-type) or >10⁶ Ω·cm (semi-insulating) |
| Surface Roughness (Ra) | <0.5 nm |
| Threading Dislocation Density (TDD) | <5×10⁶ cm⁻² |
| Active Surface Area | >90% |
| Total Thickness Variation (TTV) | ≤15 µm |
| Standard Dimensions | 10 × 5 × 0.5 mm |
| Thickness Tolerance | ±0.05 mm |
| Packaging | Class 1000 cleanroom environment |
Overview
Non-polar gallium nitride (GaN) crystal substrates are engineered for high-performance epitaxial growth of optoelectronic and high-power electronic devices where polarization-induced electric fields must be minimized. Unlike conventional c-plane GaN wafers, non-polar substrates—specifically A-plane (11-20) and M-plane (1-100)—exhibit zero or negligible spontaneous and piezoelectric polarization along the growth direction. This structural property enables improved carrier confinement, reduced quantum-confined Stark effect (QCSE), and enhanced internal quantum efficiency (IQE) in light-emitting diodes (LEDs), laser diodes (LDs), and high-electron-mobility transistors (HEMTs). These substrates serve as foundational platforms for research and development in wide-bandgap semiconductor physics, heteroepitaxy, and surface science—particularly when integrated with quartz crystal microbalance (QCM) systems for real-time, label-free monitoring of thin-film nucleation, interfacial adhesion, and mass-sensitive adsorption kinetics.
Key Features
- Two precisely oriented non-polar variants: A-plane (11-20) ±1° and M-plane (1-100) ±1°, verified by high-resolution X-ray diffraction (HRXRD) rocking curve analysis
- Controlled electrical properties: available in both n-type (resistivity 10⁶ Ω·cm), enabling flexibility in device architecture design
- Ultra-smooth surface finish: root-mean-square (RMS) roughness <0.5 nm, measured via atomic force microscopy (AFM), ensuring uniform nucleation for molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD)
- Low threading dislocation density (TDD): <5×10⁶ cm⁻², critical for reducing leakage current and improving breakdown voltage in power devices
- Tight geometric tolerances: total thickness variation (TTV) ≤15 µm and thickness uniformity ±0.05 mm across standard 10 × 5 × 0.5 mm format
- High active surface area (>90%) with minimal edge chipping or subsurface damage, validated by optical inspection and white-light interferometry
- Class 100 cleanroom packaging: double-bagged in nitrogen-purged, static-dissipative Class 100 clean bags, certified per ISO 14644-1
Sample Compatibility & Compliance
These GaN substrates are fully compatible with ultra-high-vacuum (UHV) deposition systems, plasma-enhanced chemical vapor deposition (PECVD), sputtering, and pulsed laser deposition (PLD) platforms. Their thermal stability (up to 1000 °C in inert atmospheres) and chemical inertness support rigorous pre-growth treatments—including in-situ annealing and hydrogen plasma cleaning—without surface decomposition or stoichiometric deviation. All batches undergo full traceability documentation aligned with GLP-compliant laboratory practices. While not certified to ISO/IEC 17025, material certifications include orientation verification reports, resistivity maps, AFM topography scans, and HRXRD ω-scan FWHM data. Substrate handling protocols conform to SEMI Standard F26 for compound semiconductor wafers.
Software & Data Management
When used in conjunction with QCM-based analytical systems (e.g., Q-Sense E4, Stanford Research Systems QCM200), these substrates interface seamlessly with vendor-supplied control software supporting frequency (Δf) and dissipation (ΔD) tracking at multiple harmonics (n = 3–13). Raw time-series data export is supported in CSV and HDF5 formats, enabling integration with MATLAB, Python (via qcmtools or scipy), and LabVIEW environments. For regulatory applications, audit trails, user access logs, and electronic signatures can be implemented using third-party LIMS or ELN solutions compliant with FDA 21 CFR Part 11 requirements—provided the host instrument platform supports secure authentication and immutable data archiving.
Applications
- Epitaxial template growth of non-polar InGaN/GaN quantum wells for green/yellow LEDs and micro-LED arrays
- Development of polarization-free AlGaN/GaN HEMTs for RF and power electronics
- In-situ QCM-D studies of GaN surface functionalization with silanes, phosphonic acids, or biomolecular linkers
- Calibration reference substrates for scanning probe microscopy (SPM) tip characterization and nanomechanical mapping
- Substrate-level stress and defect evolution analysis during thermal cycling or ion irradiation experiments
- Fundamental investigations of surface diffusion barriers, adatom mobility, and two-dimensional island coalescence kinetics
FAQ
Are custom orientations or off-cut angles available?
Yes—custom crystallographic orientations (e.g., R-plane sapphire templates for GaN heteroepitaxy) and controlled miscut angles (±0.1° increments) can be accommodated upon technical review and minimum order quantity agreement.
What surface preparation is recommended prior to deposition?
A standard sequence includes organic solvent rinse (acetone → IPA), oxygen plasma treatment (100 W, 30 s), and final annealing at 850–950 °C under UHV or N₂/H₂ ambient—conditions validated for stoichiometric surface reconstruction without Ga droplet formation.
Can these substrates be bonded to quartz crystals for QCM sensor fabrication?
Yes—they are routinely integrated into QCM sensor assemblies using low-stress, conductive epoxy bonding or eutectic Au–Sn soldering at ≤300 °C, preserving crystal integrity and acoustic coupling fidelity.
Is material certification provided with each shipment?
Each lot includes a Certificate of Conformance (CoC) listing batch ID, orientation verification method, resistivity range, RMS roughness, TDD estimate, and packaging conditions. Full analytical reports (HRXRD, AFM, SEM) are available upon request.
