First Sensor
Filter
Showing all 8 results
| Brand | First Sensor |
|---|---|
| Origin | Germany |
| Model | 64AA0.04-9 |
| Type | APD Array Evaluation Module for LIDAR Applications |
| Bandwidth | 125 MHz |
| Package | Shielded OEM Module with PCB Integration |
| Compliance | RoHS, CE, ISO 9001 Certified Manufacturing |
| Supply Voltage | ±15 V DC |
| Operating Temperature Range | −10 °C to +60 °C |
| Output Interface | SMA coaxial (analog voltage) |
| HV Bias Control | Integrated ultra-low-noise high-voltage source (±500 V, <7.5 mV ripple) |
| Brand | First Sensor |
|---|---|
| Origin | Germany |
| Model | 8AA0.4-9, 16AA0.13-9 (SOJ22GL & DIL18), 25AA0.04-9/25AA0.16-9 (BGA), 64AA0.04-9 (BGA), QA4000-9 (TO8Si) |
| Spectral Range | 760–910 nm |
| Quantum Efficiency | >80% |
| Package Types | SOJ22GL, DIL18, BGA, TO8Si |
| Temperature Compensation | NTC or PTC integrated |
| Element Count | 8, 16, 25 (5×5), 64 (8×8), Quadrant (4-element) |
| Brand | First Sensor |
|---|---|
| Origin | Germany |
| Model | NewOpto |
| Active Area | up to 7.1 mm² |
| Spectral Range | 600–1700 nm |
| Dark Current | as low as 2 nA (typ.) |
| Responsivity | up to 0.95 A/W @ 1550 nm |
| Package Options | TO-52, TO-5i, LCC6.1 (SMD) |
| Operating Voltage | 5 V (photovoltaic mode) |
| Brand | First Sensor |
|---|---|
| Origin | Germany |
| Model | SL21K-100k-A/GXX |
| Pressure Range | 100 kPa |
| Output Sensitivity | 40–70–130 mV @ 5 V excitation |
| Technology | STARe (Sensor Technology for Advanced Resistors) |
| Category | Optical Instrument Component |
| Compliance | RoHS, REACH, AEC-Q200 qualified (industrial variants) |
| Brand | First Sensor |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | THD Series |
| Pricing | Available Upon Request |
| Active Area | 1.2×1.2 mm² to 6.0×6.0 mm² |
| Pixel Size | 50×50 µm or 60×60 µm |
| Pixel Count | 576–10,000 |
| Trench Technology | Optional |
| Geometric Efficiency | 63–70% |
| Dark Rate | 100–500 kHz/mm² |
| Photon Detection Efficiency (PDE) | 40–50% @ peak wavelength (~420 nm) |
| Gain at 20% Overvoltage | 1×10⁶–1×10⁷ |
| Crosstalk | ≤35% |
| Total Harmonic Distortion (THD) | ≤25% |
| Brand | First Sensor |
|---|---|
| Active Area Options | 3.5×1 mm² to 20×20 mm² |
| Spectral Response Peak | 865 nm |
| Operating Voltage | 10 V |
| Load Resistance | 50 Ω |
| Rise Time | 200 ns to 4000 ns |
| Package Types | SO8, SMD, SO16, CERpin, CERsmd, LCC10G |
| Axis Configuration | Single-axis and Dual-axis variants |
| Material | Silicon-based PIN photodiode architecture |
| Brand | First Sensor |
|---|---|
| Model | newopto |
| Type | Silicon PIN Photodiode-Based Ionizing Radiation Detector |
| Active Area Range | 0.5–100 mm² |
| Dark Current | 0.005–5 nA (typ.) |
| Gamma Energy Threshold | >1 keV (X0.5–γ to X10–γ) |
| Package Options | TO-8S, TO-39, LCC10, CerPin |
| Spectral Response | 0.1–20 keV (Si absorption edge-dependent) |
| Depletion Depth | Fully depleted, 300–500 µm |
| Operating Temperature | –20 °C to +50 °C |
| Bias Voltage | –5 V to –100 V (reverse bias, model-dependent) |
| Brand | First Sensor |
|---|---|
| Model | newopto |
| Type | Wavelength-Sensitive Photodiode Array |
| Principle | Depth-Dependent Absorption in Silicon |
| Dark Current | ≤10 nA (typ.) |
| Rise Time (Diode 1) | ≤10 ns |
| Rise Time (Diode 2) | ≤10,000 ns |
| Package Options | TO-5, TO-5i, PCBA |
| Operating Voltage | 0–5 V |
| Load Resistor | 1 kΩ |
| Spectral Range | 400–1100 nm |
| Compliance | RoHS, CE |