k-Space Associates
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| Brand | k-Space Associates |
|---|---|
| Model | kSA ACE |
| Origin | USA |
| Vacuum Compatibility | Ultra-High Vacuum (UHV) / High Vacuum |
| Substrate Compatibility | Standard Semiconductor Wafers (e.g., Si, GaAs, InP, sapphire) |
| Source Flexibility | Unlimited (compatible with effusion cells, e-beam evaporators, magnetron sputter targets, PLD plumes) |
| Base Rotation | Supported |
| Optical Configuration | Triple Hollow Cathode Lamp (HCL) Integration |
| Detection Principle | Atomic Absorption Spectroscopy (AAS) |
| Element Capacity | Up to 3 elements simultaneously |
| Calibration Light Source | Pulsed Xenon Flash Lamp |
| Thermal Stability | Actively Temperature-Stabilized Optical Path |
| Data Interface | TCP/IP + Analog Voltage Output (0–10 V, proportional to absorbance/growth rate) |
| Software | kSA ACE Control & Analysis Suite (Windows-based, GLP-compliant logging) |
| Brand | k-Space Associates |
|---|---|
| Model | kSA BandiT |
| Origin | USA |
| Type | Non-Contact, Absorption-Edge-Based In-Situ Temperature Monitoring System for Semiconductor Wafers |
| Temperature Range | RT to 750 °C (up to 1300 °C with optional configuration) |
| Repeatability | ±0.2 °C |
| Resolution | 0.1 °C |
| Stability | ±0.2 °C |
| Measurement Principle | Temperature-Dependent Bandgap Absorption Edge Shift (Tauc Plot Method) |
| Compatible Platforms | MBE, MOCVD, Sputtering, PLD, Evaporation, Annealing & Rapid Thermal Processing (RTP) Systems |
| Laser Wavelength Options | Visible (e.g., 405 nm, 635 nm) and Near-IR (e.g., 980 nm, 1310 nm) |
| Surface Analysis Capabilities | In-situ deposition rate, film thickness estimation, and surface roughness correlation |
| Optical Interface | Standard viewport-compatible |
| Software | kSA BandiT Multi-Wafer Mapping Suite with motorized XY scanning stage control |
| Brand | k-Space Associates |
|---|---|
| Origin | USA |
| Model | kSA MOS US |
| Scan Area | 300 mm × 300 mm (up to 2 m optional) |
| Scanning Speed | up to 20 mm/s (X/Y) |
| Positional Resolution | 1 µm |
| Mean Curvature Resolution | 5 × 10⁻⁵ m⁻¹ (1σ) |
| Stress Measurement Range | 3.2 × 10⁵ Pa to 7.8 × 10⁹ Pa (1σ) |
| Stress Resolution | < 0.32 MPa or 1% (1σ) |
| Stress Repeatability | 0.02 MPa (1σ) |
| Curvature Repeatability | < 5 × 10⁻⁵ m⁻¹ (1σ) |
| Measurement Modes | Region-of-Interest, Linear Multi-Point, Full-Sample Scan |
| Output | 2D curvature mapping, quantitative stress distribution imaging, radius of curvature, wafer bow, and stress intensity |
| Brand | k-Space Associates |
|---|---|
| Origin | USA |
| Manufacturer Status | Authorized Distributor |
| Origin Category | Imported |
| Model | kSA XRF |
| Price Range | USD $50,000 – $500,000 |
| Brand | k-Space Associates |
|---|---|
| Origin | USA |
| Model | kSA MOS |
| Stress Measurement Range | 0.32 MPa – 7.8 GPa |
| Measurement Technology | Multi-Beam Optical Sensor (MOS) |
| Operating Temperature | Ambient to system process temperature (vacuum chamber compatible) |
| Compliance | Designed for UHV/MBE/MOCVD integration, vacuum-rated optical interface, ISO 9001-manufactured instrumentation |
| Brand | k-Space Associates |
|---|---|
| Origin | USA |
| Manufacturer Status | Authorized Distributor |
| Origin Category | Imported |
| Model | kSA MOS TS |
| Price Range | USD 70,000 – 115,000 (approx.) |
| Stress Measurement Range | MPa to GPa |
| Measurement Technology | Multi-Beam Optical Sensor (MOS) Laser Array |
| Operating Temperature Range | RT to 1000°C |
| Curvature Resolution | ≥100 km radius detection limit |
| XY Scan Range | up to 300 mm (optional) |
| XY Scan Speed | up to 20 mm/s |
| XY Step Resolution | 2 µm |
| Compatible Wafer Diameters | 50 mm, 75 mm, 100 mm, 150 mm, 200 mm, 300 mm |
| Temperature Uniformity | ±2°C |
| Environmental Control | Vacuum & low-pressure inert/oxidizing gas (N₂, Ar, O₂) |