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| Brand | ATI |
|---|---|
| Origin | USA |
| Model | 100X |
| Compliance | NIOSH 42 CFR Part 84, GB 2626–2019, GB 19083, EN 13274-7:2019, ASTM F3502-21, ISO 23328, YY 0469 |
| Aerosol Types | NaCl (salt) or DOP/PAO/paraffin oil |
| Flow Range | 10–170 L/min |
| Filtration Efficiency Range | up to 99.9995% |
| Sampling | 100% isokinetic aerosol sampling |
| Aerosol Reservoir | 3.8 L (1 gal) integrated patented replenishment system |
| Test Area | 100 cm² standard flat-media fixture |
| Configuration Options | Manual, Automatic (PLC-integrated), Hybrid |
| Brand | ATI |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PMLT |
| Price | USD $100,000 |
| Dimensions (Packaged) | 81 cm × 57 cm × 51 cm |
| Weight (Packaged) | ~41 kg |
| (Unpackaged) | ~26 kg |
| Power Supply | 100–250 V AC, 50/60 Hz |
| Aerosol Agent | Polyalphaolefin-4 (PAO-4) |
| Detection Principle | Near-forward light-scattering photometry |
| Detection Range | 0.0005–100% aerosol penetration |
| Fit Factor Limit | 200,000 |
| Data Interface | RS-232 serial port |
| Brand | ATI |
|---|---|
| Origin | USA |
| Instrument Type | Ultrasonic Anemometer |
| Measurement Principle | Orthogonal Acoustic Time-of-Flight |
| Axes | 3D (U, V, W) |
| Wind Speed Range | ±65 m/s (model-dependent) |
| Temperature Range | −50 °C to +70 °C (extended to +250 °C) |
| Accuracy | Wind Speed ±0.01 m/s, Orthogonality ±0.1°, Sonic Temperature ±0.05 °C |
| Resolution | Wind Speed 0.001–0.01 m/s (configurable), Wind Direction 0.1°, Temperature 0.01 °C |
| Output | RS-232C/RS-422 serial (ASCII, UART), programmable baud rate (4800–460,800 bps), data rate 1/3600 Hz to 200 Hz |
| Power | 9–32 VDC, <100 mA |
| IP Rating | Fully sealed for outdoor deployment |
| Probe Dimensions (V-model) | 17.8 × 17.8 × 17.8 cm |
| Weight | <1.0 kg |
| Compliance | Designed for GLP-aligned atmospheric research, compatible with eddy covariance systems per ASTM D5116 and ISO 16000-28 |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | VPE (HF Vapor Phase Etcher) |
| Price Range | USD 68,000 – 136,000 |
| Brand | PVD |
|---|---|
| Origin | United Kingdom |
| Manufacturer Status | Authorized Distributor |
| Import Status | Imported |
| Model | Q-One |
| Product Type | Low-Energy High-Current Ion Implanter |
| Application Domain | IC Ion Implantation |
| Implantation Energy | 25 kV Liquid Metal Ion Source (LMIS) |
| Implantation Dose Control | Deterministic Single-Ion Delivery |
| Wafer Size Support | 6-inch |
| Available Ion Species | >40 elements selectable via LMIS and mass-filtered column |
| Brand | Semetrol |
|---|---|
| Origin | USA |
| Model | Semetrol DLTS |
| Temperature Range | 25 K – 700 K |
| Cooling | Closed-Cycle Liquid Helium Refrigerator |
| Capacitance Measurement Frequency | 1 MHz |
| Capacitance Sensitivity | 1 fF |
| Voltage Range | ±100 V (Boonton), ±10 V (DAQ) |
| Voltage Resolution | 0.3 mV (DAQ, <20 V), 1 mV (<20 V), 10 mV (>20 V) |
| Pulse Width Range | 5 μs – >0.1 s (DAQ), 15 ms – >0.1 s (Boonton) |
| Pulse Amplitude | up to 200 V (Boonton), up to 20 V (DAQ) |
| Slew Rate | <20 V/ms (Boonton), 20 V/μs (DAQ) |
| Current Limit | 5 mA |
| Sampling Rate | down to 1 μs |
| Record Length | >10,000 points |
| Time Resolution | 50 ns |
| Capacitance Resolution | <50 aF |
| Automatic Zeroing | Yes |
| Auto-Ranging | Yes |
| Response Time | ~25 μs |
| Compensation Range | 256 pF |
| Test Signal Levels | 15, 30, 50, 100 mV |
| Filtering | Auto-detection and sinusoidal noise suppression |
| Brand | MIDAS |
|---|---|
| Origin | South Korea |
| Model | MDA-400M |
| Exposure Source | Ushio 350W UV Lamp (or optional 365 nm LED, 10,000 h lifetime) |
| Resolution | 1 µm (vacuum/hard contact), 2 µm (soft contact), 5 µm (20 µm gap proximity) |
| Beam Size | 4.25 × 4.25 inch |
| Uniformity | ≤3% (over 4-inch field) |
| Intensity | >30 mW/cm² @ 365 nm |
| Exposure Time | 0.1–999.9 s |
| Alignment Accuracy | ±0.5 µm |
| Stage Travel | X/Y ±10 mm, θ ±5°, Z ±10 mm |
| Approach Step Resolution | 1 µm |
| Microscopy | Dual CCD zoom microscope (80×–480×), 17″ LCD monitor |
| Substrate Compatibility | 2″, 3″, 4″ wafers |
| Mask Size | 4″ and 5″ |
| Vacuum Requirement | < −200 mbar (integrated oil-free pump) |
| CDA | >5 kg/cm² |
| N₂ | >3 kg/cm² |
| Power | 220 V, 15 A, single-phase |
| Brand | EMU |
|---|---|
| Origin | UK |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | SPPE |
| Throughput | 400 WPH |
| Wafer Diameters Supported | 75 mm / 100 mm, 125 mm / 150 mm, and 150 mm / 200 mm |
| ESD Protection | Full Integrated ESD-Safe Architecture |
| Compatibility | Si, SiC, GaN, and Other Semiconductor Substrates |
| Control System | Embedded PC with Touchscreen HMI |
| Interface Options | SECS/GEM Compliant |
| Cassette Handling | Auto-mapping with Dual-Slot & Cross-Loading Detection |
| Safety | Real-time Wafer Presence & Edge Detection Sensors |
| Brand | PALAS |
|---|---|
| Origin | Germany |
| Model | BEG1000, BEG2000, BEG3000 |
| Volumetric Flow Rate | 80–165 L/min |
| Particle Material | Non-cohesive powders & bulk dusts |
| Max. Aerosol Concentration | ~10⁷ particles/cm³ |
| Mass Flow Rate (A-type) | 8–550 g/h (SAE Fine, A2 Dust) |
| Mass Flow Rate (B-type) | 100–6,000 g/h (SAE Fine, A2 Dust) |
| Mass Flow Rate (C-type) | 350–7,300 g/h (SAE Fine, A2 Dust) |
| Particle Size Range | 0.1–200 µm |
| Carrier Gas | Compressed air (4–8 bar) |
| Inlet Connection | Quick-fit coupling |
| Aerosol Outlet (A) | ID 6.4 mm / OD 10 mm |
| Aerosol Outlet (B) | ID 8 mm / OD 12 mm |
| Aerosol Outlet (C) | ID 6.2 mm / OD 10 mm |
| Power Supply | 115–230 V, 50/60 Hz |
| Reservoir Volume | 1500 cm³ |
| Fill Capacity | 500 g |
| Continuous Operation | Up to 120 hours |
| Compliance | ISO 5011 nozzle design |
| Control Interface | Remote operation via analog/digital I/O or PC software |
| Brand | EMU |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Batch Aligner and Elevator |
| Wafer Diameters Supported | 75 mm, 100 mm, 125 mm, 150 mm, 200 mm |
| Alignment Reference | Flat or Notch |
| Lifting Mechanism | Dual Non-Vacuum Comb Lifters |
| Illumination | Configurable LED (Standard: Red or White) |
| Substrate Compatibility | Si, SiC, GaN, and Other Compound Semiconductors |
| Interface | Touchscreen HMI with Angle Selection for Edge Alignment |
| Brand | EMU |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Selective Wafer Elevator |
| Wafer Diameters Supported | 75 mm, 100 mm, 125 mm, 150 mm, 200 mm |
| Operation Mode | Manual Actuation with Indexed Slot Selection (e.g., slots 1, 6, 11, 16, 21) |
| Construction Materials | Cleanroom-Compatible Organic Polymers and Non-Shedding Structural Components |
| Compliance | Designed for ISO Class 1–5 Cleanroom Environments |
| Substrate Compatibility | Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Sapphire, SOI |
| Brand | PREVAC |
|---|---|
| Origin | Poland |
| Model | PES |
| Base Pressure | ≤1×10⁻¹¹ mbar |
| Analysis Chamber Diameter | Ø310 mm |
| Sample Temperature Range | 20 K (LHe) to 1400 °C |
| Sample Manipulator | 4–6-axis motorized |
| Energy Analyzer | Hemispherical EA15 UHV |
| X-ray Sources | Monochromated dual-anode (AlKα/AgLα) and non-monochromated dual-anode (AlKα/MgKα) |
| UV Source | Powered He-I (21.2 eV) and He-II (40.8 eV) lamps |
| Flood Gun | Electron flood source for charge neutralization |
| Ion Sources | Ar⁺ sputter gun and gas cluster ion beam (GCIB) for depth profiling/cleaning |
| Optional Add-ons | LEED, RGA, IPES/LEIPS, AES, EELS, ISS modules |
| Control Software | Spectrium (Tango-compliant, PLC-integrated) |
| Vacuum System | Composite pumping stack including roughing pump, turbomolecular pump (TMP), ion pump, and titanium sublimation pump (TSP) with LN₂ shroud |
| Brand | PALAS |
|---|---|
| Origin | Germany |
| Model | Promo |
| Measurement Principle | Optical Light Scattering (90° detection angle) |
| Sampling Flow Rate | 5.0 L/min |
| Particle Size Range | 0.2–100 µm (optical equivalent diameter) |
| Maximum Concentration | 1×10⁶ particles/cm³ |
| Channel Resolution | 128 channels (32 per decade) |
| Sampling Duration | 1 s – 18 h |
| Operating Temperature Range | −90 °C to +120 °C |
| Fiber-Optic Sensor Cable Length | 3–300 m |
| Compliance | ISO 27498, ISO 16488 (aerosol instrumentation), ASTM D6625 (light scattering particle sizing) |
| Brand | PVD |
|---|---|
| Origin | USA |
| Distributor Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Standard Particles |
| Price | Upon Request |
| Brand | Midas |
|---|---|
| Origin | Germany |
| Model | SPIN150X |
| Max. Rotation Speed | 12000 rpm |
| Speed Accuracy | ±1 rpm |
| Max. Acceleration | 30000 rpm/s |
| Substrate Diameter | up to 160 mm (6") |
| Chamber Diameter | 202 mm |
| Controller Memory | 50 programs × 99 steps each |
| Programmable Outputs | 2 dry-contact relays |
| Dimensions (W×D×H) | 275 × 240 × 450 mm |
| Housing Material | Natural Polypropylene (NPP) or PTFE options |
| Sample Compatibility | 5 mm to 160 mm round wafers or 4" × 4" square substrates |
| Brand | EMU |
|---|---|
| Origin | United Kingdom |
| Model | SMIF Batch ID Reader |
| Wafer Size | 200 mm |
| Integration Interface | GEM300 / SEMI E84 |
| Cycle Time | < 3 minutes |
| System Architecture | Integrated KUKA robotic handler + SMIF load port + IDWR200SMIF reader module |
| Application Scope | Automated wafer lot tracking, SMIF pod-to-pod transfer, front-end fab traceability |
| Brand | Midas |
|---|---|
| Origin | South Korea |
| Manufacturer Status | Authorized Distributor |
| Origin Category | Imported |
| Model | MDA-400LJ |
| Pricing | Upon Request |
| Mask Size Max | 5-inch |
| Substrate Size Max | 4-inch circular wafers |
| Beam Shape | Circular |
| Beam Diameter | 125 mm |
| Light Source | UV LED |
| Wavelength | 365 nm |
| Beam Uniformity | < ±3 % |
| Peak Irradiance at 365 nm | 25 mW/cm² |
| Alignment Method | Manual |
| Alignment Accuracy | ±1 µm |
| Exposure Modes | Soft Contact, Hard Contact, Proximity (Vacuum-assisted) |
| Resolution | 1 µm (with 1 µm photoresist thickness under vacuum contact) |
| Weight | 150 kg |
| Dimensions (W×D×H) | 995 × 800 × 850 mm |
| Brand | PREVAC |
|---|---|
| Origin | Poland |
| Model | HPPES |
| Pressure Range | 2×10⁻⁹ mbar – 50 mbar |
| Base Pressure (UHV mode) | ≤1×10⁻⁹ mbar (configuration-dependent) |
| Sample Temperature Range | 20 K (LHe/LN₂-cooled) to 1400 °C |
| Analyzer Type | High-Pressure Hemispherical Energy Analyzer (EA15-HP5 / EA15-HP50) |
| X-ray Sources | Dual-anode monochromated AlKα / AgLα and non-monochromated AlKα / MgKα |
| UV Source | Powered He(I)/He(II) discharge lamp |
| Ion Source | Broad-beam Ar⁺ for sputter depth profiling or surface cleaning |
| Neutralizer | Electron flood gun |
| Manipulator | Motorized or manual 4–6 axis, with precise angular and translational control |
| Load-Lock Chamber | Integrated, with linear transfer to analysis chamber |
| Vacuum System | Composite pumping stack including roughing pump, turbomolecular pump (TMP), titanium sublimation pump (TSP), and cryo-shielded ion pump |
| Software Platform | Spectrium (Tango-compatible, PLC-integrated) |
| Compliance | UHV/HPXPS/APXPS/UPS/ARPES/AES/EELS/ISS/IPES/LEIPS standards |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Type | Electrostatic Chuck (E-chuck) |
| Application | Wafer-level and Die-level Fixturing in Wet Etching & MEMS Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Control Interface | Analog voltage input (0–10 V) or digital RS-485 |
| Holding Force Range | Adjustable up to 0.1–0.8 N/cm² depending on die size and surface condition |
| Substrate Compatibility | Si, SiO₂, SiN, SOI, GaAs, quartz, and patterned MEMS wafers |
| Operating Temperature | Ambient to 80 °C |
| Vacuum Requirement | Optional backside helium cooling interface (compatible with standard wafer chucks) |
| Material | Al₂O₃ ceramic base with embedded bipolar or monopolar electrode architecture |
| Brand | Korea Vacuum |
|---|---|
| Origin | South Korea |
| Model | PECVD/RIE |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication |
| Gas Channels | 8 (4 for PECVD, 4 for RIE) |
| Deposited Films | SiOₓ, SiNₓ |
| Base Pressure | 1×10⁻⁷ Torr |
| Operating Pressure Range (PECVD) | 1×10⁻³ Torr |
| Operating Pressure Range (RIE) | 0.02–500 mTorr |
| Maximum Substrate Size | 8-inch (200 mm) |
| RF Source Power | 600 W, 13.56 MHz |
| RF Bias Power | 300 W, 13.56 MHz |
| Platen Temperature | Up to 400 °C |
| Pumping System | 200 L/sec corrosion-resistant turbomolecular pump (Pfeiffer TPH261PC) + BOC Edwards RV12 roughing pump |
| Gas Distribution | Showerhead-type for both PECVD and RIE |
| Substrate Handling | Manual loading with pneumatic top-hinged lid |
| Vacuum Gauges | Baratron capacitance manometer (RIE), BOC Edwards wide-range gauge (PECVD & RIE) |
| MFC Count | 4 (PECVD), 3 (RIE) |
| Cooling | Water-cooled platen and electrodes |
| Control Interface | LabVIEW-based PC control with automated pressure regulation and process sequencing |
| Brand | Instytut Fotonowy |
|---|---|
| Origin | Poland |
| Model | Electrochemical Kelvin Probe |
| Weight | 15 kg |
| Dimensions | 40 × 40 × 45 cm |
| Power Supply | 230 V, 50 Hz or 115 V, 60 Hz |
| PC Interface | USB 2.0 |
| Measurement Principle | Dual-channel lock-in amplifier-based vibrating capacitor method |
| Contact Potential Difference (CPD) Range | −5 to +5 V |
| CPD Resolution | 0.15 mV |
| Current Ranges | 300 nA / 30 nA / 3 nA / 300 pA |
| Probe Tip | Au mesh, 2.5 mm diameter |
| Vertical Positioning Resolution | 20 µm |
| Typical CPD Measurement Gap | 0.2–1 mm |
| XY Motorized Stage | 50 × 50 mm travel range |
| Faraday Cage | Standard airtight version with inert gas flow system |
| Electrochemical Cell | PTFE body, Kapton-insulated sample substrate, Ag/AgCl reference electrode option |
| Optical Access | Fused silica window, UV-enhanced mirror, liquid light guide for bottom illumination |
| Environmental Sensors | Integrated temperature and humidity monitoring |
| Laser Guidance System | Visible alignment laser with automatic gap-sensing barrier |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Model | IR-M (Infrared Microscope) |
| Optical Magnification Options | 2.5×, 5×, 10× |
| Wafer Compatibility | 100 mm (4″), 150 mm (6″), 200 mm (8″) |
| Spatial Resolution | ≤3 µm (at 5× objective, transmission mode) |
| Detection Sensitivity | Defects ≥3 µm resolvable in Si wafers under IR transmission |
| Illumination Modes | Top-side visible illumination (reflected mode) + Through-wafer infrared illumination (transmission mode) |
| Imaging Sensor | IR-sensitive CMOS camera with USB 3.0 interface |
| Stage | Manual or motorized XY stage (Ø ≤200 mm wafer support) |
| Application Domain | Silicon IC & MEMS wafer-level defect inspection, SOI layer visualization, buried structure analysis |
| Brand | EMU |
|---|---|
| Origin | UK |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | IDWR |
| Price Range | USD 14,000 – 72,000 (FOB) |
| Compatible Wafer Diameters | 75 mm, 100 mm, 125 mm, 150 mm, 200 mm |
| Throughput | 25 wafers per batch in ≤ 120 seconds (including cassette mapping, batch alignment, and full-surface ID reading) |
| Imaging System | Cognex In-Sight 1741 Smart Camera |
| Read Targets | Laser-etched marks and Data Matrix codes on wafer frontside and backside |
| Interface Protocols | RS-232, Ethernet, SECS/GEM compliant |
| User Interface | Integrated industrial touchscreen with recipe management and maintenance diagnostics |
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