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| Brand | Korea Vacuum |
|---|---|
| Origin | South Korea |
| Model | PECVD/RIE |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication |
| Gas Channels | 8 (4 for PECVD, 4 for RIE) |
| Deposited Films | SiOₓ, SiNₓ |
| Base Pressure | 1×10⁻⁷ Torr |
| Operating Pressure Range (PECVD) | 1×10⁻³ Torr |
| Operating Pressure Range (RIE) | 0.02–500 mTorr |
| Maximum Substrate Size | 8-inch (200 mm) |
| RF Source Power | 600 W, 13.56 MHz |
| RF Bias Power | 300 W, 13.56 MHz |
| Platen Temperature | Up to 400 °C |
| Pumping System | 200 L/sec corrosion-resistant turbomolecular pump (Pfeiffer TPH261PC) + BOC Edwards RV12 roughing pump |
| Gas Distribution | Showerhead-type for both PECVD and RIE |
| Substrate Handling | Manual loading with pneumatic top-hinged lid |
| Vacuum Gauges | Baratron capacitance manometer (RIE), BOC Edwards wide-range gauge (PECVD & RIE) |
| MFC Count | 4 (PECVD), 3 (RIE) |
| Cooling | Water-cooled platen and electrodes |
| Control Interface | LabVIEW-based PC control with automated pressure regulation and process sequencing |
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