Semiconductor Instruments
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| Brand | Analysis |
|---|---|
| Origin | USA |
| Manufacturer | Analysis Instruments, Inc. |
| Product Type | Imported |
| Model | X-Pro II |
| Pricing | Available upon Request |
| Brand | Angstrom |
|---|---|
| Model | customized-23 |
| Chamber Diameter | 200 mm (quartz) |
| Maximum Substrate Diameter | 150 mm |
| Furnace | Triple-zone resistive heating |
| Uniform Temperature Zone | 150 mm |
| Max Temperature | 1000 °C |
| Pressure Control Range | 50–500 mTorr (downstream, VAT throttle butterfly valve) |
| Vacuum Pump | Ebara ESA25-D dry pump (8 CFM) |
| Application Domain | Semiconductor thin-film fabrication, MEMS, optoelectronics, graphene & CNT research |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Lines | 4–10 channels |
| Uniformity | <1.5% (RMS, Al₂O₃ on 4″ Si wafer) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Channels | 4–10 |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Uniformity | ≤1.5% (typical for AL₂O₃ on 4″ Si wafers) |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Amod |
| Base Plate Size | 500 mm × 500 mm |
| Max. Source Capacity | 8 |
| Vacuum Capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Deposition Methods | DC/RF/Pulsed DC/HIPIMS Sputtering, Thermal Evaporation, E-beam Evaporation, Reactive Sputtering, Plasma & Ion Beam Surface Treatment |
| Substrate Handling Options | Heated/Cooled Stages, Variable-Angle Rotation, Planetary Motion, Dome & Masking Fixtures, Substrate Biasing |
| Control System | Aeres™ Software with Recipe Management, Real-time Rate Monitoring, and Torque-Sensing Crucible Indexing |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Box-Type PVD Coater |
| Substrate Range | 100 mm – 1200 mm |
| PVD Process Compatibility | Thermal Evaporation, Electron Beam Evaporation, Sputtering (DC/RF/Magnetron), Pulsed Laser Deposition (PLD) |
| Vacuum Capability | Optional Ultra-High Vacuum (UHV) Configuration (≤1×10⁻⁹ Torr base pressure) |
| Application Domain | Microelectronics, Thin-Film Optics, MEMS, Quantum Devices, R&D Prototyping |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | COVAP |
| Vacuum Pumping | Turbo-molecular pump system |
| Substrate Size Range | Up to 1200 mm (customizable) |
| Deposition Technologies | DC/RF/MF/Pulsed DC sputtering, thermal evaporation (boat/wire/crucible), electron beam evaporation, reactive sputtering, ion-assisted deposition |
| Plasma & Ion Beam Sources | Integrated glow discharge plasma cleaning, broad-beam ion sources for substrate pre-treatment and film densification |
| Film Thickness Monitoring | Isolated quartz crystal microbalance (QCM) sensors with cross-source interference mitigation |
| Automation | Recipe-driven multi-layer deposition control (sequential or co-deposition), programmable substrate rotation/tilt/heating |
| Integration Readiness | Glovebox-compatible design, modular chamber architecture |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | Angstrom |
|---|---|
| Origin | Canada |
| Model | EvoVac |
| Chamber Dimensions | 500 mm × 700 mm substrate stage |
| Vacuum capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Source options | RF sputtering, DC sputtering, Pulsed DC sputtering, HIPIMS, reactive sputtering |
| Cathode configurations | circular, linear, and cylindrical |
| Application domain | microelectronics |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Nexdep |
| Substrate Size | 6-inch (150 mm) |
| Chamber Dimensions | 400 × 400 × 500 mm (L×W×H) |
| Base Pressure | <5 × 10⁻⁷ Torr |
| Vacuum Gauging | Inficon MPG400 (3.75 × 10⁻⁹–760 Torr) |
| Roughing Pump | Oil-sealed rotary vane pump, ≥9 cfm |
| High-Vacuum Pump | Turbomolecular pump, ≥685 L/s |
| Evaporation Source | Resistive-heated metal source, 2.5 kW max power, SCR-controlled |
| Thickness Monitor | Water-cooled quartz crystal microbalance (QCM) probe with rigid mounting |
| Sample Stage | Motorized rotation (10–30 rpm), tilt-free horizontal design, shutter-integrated |
| Chamber Sealing | Dual O-ring sealed front sliding door and rear hinged door with integrated anti-coating viewport |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Model | Angstrom Dep II |
| Substrate Size | 4", 6", 8", or 12" wafers |
| Process Temperature Range | 25–400 °C (optional extended range available) |
| Precursor Channels | 4 standard (upgradable to 6) |
| Uniformity | < 1% (1σ, across full wafer) |
| Footprint | 950 mm × 700 mm (W × D) |
| Cleanroom Compatibility | ISO Class 5 (Class 100) compliant |
| Deposition Modes | Thermal ALD, Plasma-Enhanced ALD (PE-ALD), and Powder ALD capable |
| Weight | Configurable (typical system: ~350 kg) |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SE Series |
| Pricing | Upon Request |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SR Series |
| Pricing | Upon Request |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Power Supply | 3×400 V + N + PE, 75–105 kW |
| Cooling Water | 2–4 bar, ΔP ≤1 bar, flow rate 30–50 L/min |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Control System | Digital PID with real-time feedback loop |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Heating Source | IR Halogen Lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Dual-chamber optional |
| Vacuum Capability | Compatible with turbomolecular pump for ≤10⁻⁶ mbar base pressure |
| Control Interface | Ethernet-connected PC software with full PID programmability |
| Gas Handling | Up to 3 process gases, digitally controlled mass flow controllers (MFCs) |
| Thermocouple Configuration | Dual N-type (center + edge) for direct wafer-temperature feedback |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with full programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Cooling Method | Forced-air (low-noise, no compressed air required) + water-cooled quartz chamber walls |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Thermocouple Configuration | Dual N-type thermocouples — center + edge placement for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and needle-valve purging |
| Optional Accessories | SiC-coated graphite susceptor, molecular pump integration, cold-wall double-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch) |
| Temperature Range | Up to 1200 °C |
| Max. Heating Rate | 160 K/s |
| Max. Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Standard Optical Viewport | Fused silica |
| Thermometry | Dual-range pyrometer (150–1100 °C and 400–1500 °C), K-type thermocouple backup |
| Control System | Digital PID with real-time feedback loop |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Instrument Type | High-Vacuum Rapid Thermal Annealing (RTA) Furnace |
| Sample Diameter | 150 mm (6-inch wafer) |
| Temperature Range | Up to 1200 °C |
| Max. Ramp Rate | 160 K/s |
| Max. Cool-down Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Heating Source | Array of high-power infrared lamps (18 lamps, 34 kW total) |
| Temperature Measurement | Dual-range pyrometry (150–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time feedback loop |
| Compliance | Designed for GLP/GMP-aligned semiconductor R&D and pilot-line fabrication |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max. Heating Rate | 160 K/s |
| Max. Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C & 400–1500 °C) + K-type thermocouple |
| Controller | Digital PID with real-time thermal profiling |
| Footprint | 510 mm × 1425 mm × 800 mm |
| Weight | 240 kg |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch wafers) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max Heating Rate | 160 K/s |
| Max Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 1 × 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time thermal profiling |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Max Temperature | up to 1450°C (100HT version) |
| Max Ramp Rate | up to 200°C/s |
| Vacuum Capability | High vacuum (base pressure <1×10⁻⁶ mbar with optional turbo pump) |
| Cooling | Forced gas quench or passive cooling |
| Control | Dual-sensor (thermocouple + pyrometer), digital PID, Ethernet-enabled PC interface |
| Gas Lines | Up to 5 independent channels with digital mass flow controllers (MFCs) |
| Chamber | Stainless steel cold-wall design with infrared halogen tubular lamps |
| Substrate Compatibility | Ø50–300 mm wafers and non-standard substrates (glass, metal, polymer, graphite, SiC susceptors) |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/s (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Base Pressure | ≤ 1 × 10⁻⁶ hPa (with turbo-molecular pump and load-lock) |
| Heating Configuration | Dual-side (top & bottom) halogen lamp array |
| Susceptor Materials | Graphite or SiC-coated graphite |
| Process Atmosphere | Inert (N₂, Ar), oxidizing (O₂), reducing (H₂/N₂), or vacuum |
| Standard Temperature Monitoring | Dual-channel pyrometry + optional thermocouple |
| Control System | SIMATIC S7-based PLC with 7" HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers (configurable) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-Down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ hPa (with turbomolecular pump and load-lock) |
| Heating Configuration | Dual-side (top + bottom) halogen lamp array |
| Standard Temperature Sensors | Pyrometer (non-contact, real-time wafer surface monitoring) + Embedded thermocouple (susceptor reference) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen interface |
| Programmable Recipes | Up to 50 stored profiles, each with up to 50 temperature/time/gas/vacuum segments |
| Gas Delivery | 4-channel MFC-controlled (N₂, Ar, O₂, forming gas, etc.) |
| Cooling | Water-cooled chamber + N₂ backside purge for substrate quenching |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | 4-channel MFC-controlled process gas lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤ 1 × 10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | Up to 4 MFC-controlled process lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7-inch HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Product Type | Rapid Thermal Processing (RTP) Furnace |
| Temperature Range | Up to 2000°C (Zenith series) |
| Heating Rate | >250°C/s (AS-Micro) |
| Vacuum Capability | Down to 10⁻⁶ Torr (AS-Master) |
| Sample Diameter Support | 2 mm to 200 mm |
| Chamber Type | Cold-wall stainless steel or quartz tube |
| Heating Source | Halogen lamp array or tungsten filament |
| Temperature Measurement | Dual-sensor (pyrometer + thermocouple) |
| Control System | Digital PID with auto-tuning |
| Compliance | Designed for GLP/GMP-aligned lab environments, compatible with ASTM F1531 (RTP process validation), ISO 14644-1 Class 5 cleanroom integration |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Cooling Method | Forced-air cooling (low-noise, no compressed air required) |
| Chamber Material | Quartz tube within double-walled stainless-steel cold-wall structure with water-cooled jacket |
| Thermocouple Configuration | Dual N-type thermocouples — center and edge mounted for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and precision needle valves |
| Optional Accessories | SiC-coated graphite susceptor, high-vacuum turbomolecular pump, dual-chamber configuration |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Heating Source | Array of IR halogen lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Cold-wall, water-cooled quartz chamber with dual stainless-steel enclosure |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) |
| Optional Configurations | SiC-coated graphite susceptor, molecular pump integration, dual-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model Series | RTP/RTCVD, DLI-CVD, DLI-ALD |
| Temperature Range | 0–2000 °C |
| Max. Ramp Rate | 250 °C/s |
| Cool-down Rate | 250 °C/s |
| Vacuum Capability | Down to 10⁻⁶ Torr |
| Heating Technology | Halogen Lamp (RTP), Tungsten Heater (Zenith), Dual-Side IR (AS-Premium) |
| Chamber Type | Cold-wall stainless steel or quartz tube |
| Substrate Compatibility | 2″ to 200 mm wafers, custom substrates, compound semiconductors |
| Compliance | Designed for GLP/GMP-aligned labs |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | Zenith-100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 6-inch (150 mm) |
| Temperature Range | 0–2000 °C |
| Maximum Heating Rate | 150 °C/s |
| Maximum Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Chamber | Stainless steel, water-cooled, cold-wall design |
| Heating Elements | High-purity tungsten |
| Atmosphere Compatibility | Vacuum, inert (N₂, Ar), or reducing (H₂/N₂) |
| Standard Temperature Sensors | Dual-mode — calibrated pyrometer (for >600 °C) and type C thermocouple (for full range) |
| Control System | Fast-response digital PID controller with real-time thermal profile logging |
| Vacuum Requirement | Turbo-molecular pump mandatory (roughing pump included) |
| Optional Upgrades | Automated pressure control with throttle valve, SiC- or graphite-coated susceptors, CVD-compatible gas inlets |