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| Brand | ULVAC-PHI |
|---|---|
| Origin | Japan |
| Model | PHI GENESIS 900 |
| Excitation Source | Cr Kα (5414.7 eV) |
| Probe Depth | ~30 nm |
| Spatial Resolution | <10 µm (focused beam mode) |
| Energy Resolution | <0.3 eV (at Fermi edge, pass energy 20 eV) |
| Analyzer Type | Hemispherical Deflector Analyzer (HDA) with 180° double-pass optics |
| Vacuum System | UHV base pressure <5×10⁻¹⁰ Torr |
| Automation | Fully motorized sample stage, multi-axis tilt/rotation, in-situ transfer capability |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | DSA100 |
| Price Range | USD 68,000 – 136,000 |
| Instrument Class | Dynamic Contact Angle Analyzer |
| Form Factor | Benchtop Laboratory System |
| Contact Angle Measurement Range | 0–180° |
| Contact Angle Accuracy | ±0.1° |
| Sample Stage Dimensions | 100 × 100 mm (adjustable height) |
| Optical Magnification | 0.7–4.5× (motorized zoom lens) |
| Surface/Interfacial Tension Range | 0.01–2000 mN/m |
| Surface/Interfacial Tension Accuracy | ±0.01 mN/m |
| Temperature Control Range | −30 to +400 °C (with optional thermostatted stages) |
| Humidity Control | Integrated chamber (10–95% RH, ±2% RH stability) |
| Imaging System | High-speed monochrome CMOS camera (1024 × 1024 px, 12-bit dynamic range, up to 300 fps) |
| Software Platform | ADVANCE v4.x with audit trail, user management, and 21 CFR Part 11 compliance modules |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported Instrument |
| Model | SPEKTRI 80 |
| Price Range | USD 42,000 – 70,000 |
| Brand | Bruker |
|---|---|
| Origin | Germany |
| Model | SkyScan 2211 |
| X-ray Source | 20–190 kV, 4/10/25 W, sub-micron focal spot size, 5-position filter wheel |
| X-ray Target | Tungsten (standard) |
| Detector | 3 MP CMOS flat panel (1920 × 1536 px) or 11 MP cooled CCD (4032 × 2670 px) |
| Reconstruction Volume (CMOS) | up to 3776 × 3776 × 1160 px (dual offset mode) |
| Reconstruction Volume (CCD) | up to 8000 × 8000 × 2272 px (dual offset mode) |
| Spatial Resolution | down to 100 nm (detector-limited, geometry-dependent) |
| Sample Capacity | Ø204 mm × L200 mm, max. 25 kg |
| Sample Positioning | direct-drive air-bearing rotation stage with integrated piezo-driven micro-positioning (5.5 mm travel) |
| Reconstruct Time | 1 min 12 sec (600 projections, 2K × 2K × 1K) |
| Radiation Safety | <0.5 µSv/h at 10 cm from surface (measured at 190 keV, 4 W on target) |
| Power Supply | 100–130 V or 200–240 V AC, 50–60 Hz |
| Cooling & Air Supply | integrated closed-loop water chiller and oil-free air compressor with particle filters and desiccant dryer |
| Brand | PHI (Physical Electronics) |
|---|---|
| Model | TRIFT™ |
| Origin | Japan |
| Instrument Type | Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) |
| Mass Analyzer | Triple-Focusing Reflectron TOF |
| Spatial Resolution | ≤ 100 nm (typical, dependent on primary ion source and sample conditions) |
| Imaging Modes | 256 × 256, 512 × 512, 1024 × 1024 pixel formats |
| Depth Profiling | Sputter-driven sequential layer removal with synchronized mass spectral acquisition |
| 3D Reconstruction | Voxel-based data integration from depth-resolved imaging stacks |
| Sample Stage Temperature Range | –150 °C to +200 °C (LN₂ cooling + resistive heating) |
| Sample Mounting Options | Back-mount (25 mm diameter), front-mount (100 mm × 100 mm planar support) |
| Compliance | Designed for GLP/GMP-aligned workflows |
| Brand | ULVAC-PHI |
|---|---|
| Origin | Japan |
| Model | PHI oTOF3+ |
| Type | TOF-SIMS Instrument with TRIFT Analyzer |
| Ion Sources | Liquid Metal Ion Gun (Ga⁺), Optional Ar-GCIB, Cs⁺, O₂⁺ |
| Spatial Resolution | <50 nm (high-resolution mode), <500 nm (high-mass-resolving mode) |
| Automation | Fully Automated Sample Transfer & Unattended Multi-Sample Analysis |
| Charge Neutralization | Dual-Beam Electron/Ar⁺ Neutralization System |
| Optional Features | Parallel Imaging MS/MS, FIB Cross-Sectioning, Cryo-Stage, Detachable Glovebox Integration |
| Compliance | Designed for GLP/GMP environments |
| Brand | ULVAC-PHI |
|---|---|
| Origin | Japan |
| Model | PHI 710 |
| Category | Imported Instrument |
| Vendor Type | Authorized Distributor |
| Pricing | Upon Request |
| Brand | Bruker |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (China-made) |
| Model | SKYSCAN 1275 |
| Service Pricing | USD 5,000–10,000 per scan session |
| Years of Service Experience | 3 |
| Brand | Shuyun |
|---|---|
| Origin | United Kingdom |
| Model | C60-20S |
| Operating Voltage Range | 5–20 kV |
| Beam Current | 50 nA |
| Spot Size | 100 µm |
| Scan Area | 4 × 4 mm |
| Source-to-Head Distance | 142 mm |
| Recommended Working Distance | 50 mm |
| Power Supply | 3U 19″ rack-mountable unit |
| Input Power | 110–240 VAC, 13 A, 50/60 Hz |
| Software Platform | Windows 10 or later |
| Integration Flange | NW 63 CF |
| Valve Type | Integrated gate valve |
| Brand | Freiberg Instruments |
|---|---|
| Origin | Germany |
| Model | MDPlinescan |
| Sample Type | Monocrystalline & Multicrystalline Silicon Wafers, Ingots, and Processed Substrates |
| Measurement Principle | µ-PCD (Microwave Photoconductance Decay) & Steady-State Photoconductance |
| Carrier Lifetime Range | 0.1 µs – 10 ms (typ.) |
| Resistivity Range | 0.2 – 10³ Ω·cm |
| Conductivity Type | p-type & n-type |
| Sample Dimensions | Up to 50 × 50 mm² |
| Hardware Interface | Ethernet (TCP/IP, Modbus TCP) |
| Power Supply | 24 V DC, 2 A |
| Dimensions | 174 × 107 × 205 mm |
| Weight | 3 kg |
| Compliance | CE, RoHS, IEC 61000-6-2/6-4 |
| Software Protocol | Standard OPC UA & RESTful API support |
| Brand | Freiberg Instruments |
|---|---|
| Origin | Germany |
| Model | MDPpro 850+ |
| Measurement Principle | Microwave Photoconductance Decay (µPCD) & Quasi-Steady-State Photoconductance (QSS-PCD/MDP) |
| Lifetime Range | 20 ns – 100 ms (for resistivity > 0.3 Ω·cm) |
| Scan Speed | Line scan < 30 s |
| Simultaneous Parameters | Minority carrier lifetime (µPCD/MDP), photoconductivity, resistivity |
| Sample Geometry Recognition | Automatic (G12, M10 bricks, wafers up to Ø300 mm) |
| Laser Sources | 980 nm IR diode (≤500 mW) + 905 nm IR diode (≤9 W) |
| Resistivity Range | 0.5 – 5 Ω·cm (custom ranges available) |
| Conductivity Type | p-type and n-type silicon |
| Compliance | SEMI PV9-1110, CE, ISO 9001 |
| Software Platform | MDP Studio (Windows 11+, .NET Framework, dual Ethernet) |
| Power Supply | 100–250 V AC, 6 A |
| Dimensions (W×H×L) | 2560 × 1910 × 1440 mm |
| Weight | ~200 kg |
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