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| Brand | AMPTEK |
|---|---|
| Origin | USA |
| Model | FASTSDD |
| Active Area Options | 25 mm² (collimated to 17 mm²) or 70 mm² (collimated to 50 mm²) |
| Energy Resolution | ≤122 eV at 5.9 keV |
| Maximum Count Rate | >1,000,000 cps |
| Peak-to-Background Ratio | 26,000:1 |
| Preamplifier Rise Time | <35 ns |
| Window Options | Beryllium (0.5 mil / 12.5 µm) or Silicon Nitride (C-series / Si₃N₄) |
| Detector Thickness | 500 µm |
| Package | TO-8 |
| Cooling Delta-T | >85 K |
| Noise Performance | Optimized for low electronic noise and high charge collection efficiency |
| Brand | Haoyuan |
|---|---|
| Origin | Jilin, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | XAFS2300+ |
| X-ray Source Power (XAFS mode) | 3 kW |
| X-ray Source Power (XES mode) | 50 W |
| Monochromatic Photon Flux | > 2 × 10⁶ photons/sec (at 7–9 keV) |
| Minimum Detectable Elemental Concentration | ≥ 1 wt% |
| Tunable X-ray Absorption Energy Range | 4.5–25 keV |
| Energy Resolution | 0.5–3 eV |
| Energy Scale Drift Reproducibility | < 50 meV per measurement session |
| Monochromator Architecture | Spherical-bent crystal on high-precision Rowland-circle geometry |
| Detector | High-resolution silicon drift detector (SDD) |
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