Lithography & Coating/Developing Equipment
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| Brand | NS (Japan) |
|---|---|
| Origin | Japan |
| Model | 20-M/NS-8 |
| Minimum Feature Size | 1 µm |
| Ion Beam Diameter | 1 µm |
| Acceleration Voltage Range | 1–5 kV (typical for Kaufman-type sources) |
| Substrate Capacity | 8 × Ø76 mm or 6 × Ø100 mm |
| Ion Source | 20 cm Kaufman-type Broad-Beam Ion Source (KRI, USA) |
| Cooling | Direct substrate cooling via integrated chiller interface |
| Motion Control | Planetary rotation (rotation + revolution) for uniform etch rate distribution |
| Power Supply | WELL-5000 (compatible with domestic replacements) |
| Compliance | CE-marked architecture |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | 4 IBE |
| Sample Holder | 4" φ, single wafer |
| Ion Incidence Angle | 0° to ±90° |
| Ion Source | KDC-40 Kaufman-type (KRI, USA) |
| Base Pressure | ≤1×10⁻⁴ Pa |
| Turbomolecular Pump | Pfeiffer, 350 L/s |
| Etch Uniformity | ≤±5% |
| Cooling | Direct substrate cooling |
| Motion Control | Planetary rotation (rotation + revolution) |
| Gas Compatibility | Ar, O₂, N₂, CF₄, Xe, and mixed process gases |
| Brand | NS (Nippon Seiko) |
|---|---|
| Origin | Japan |
| Model | NS-8 |
| Minimum Feature Size | ≤1 µm |
| Ion Beam Diameter | ≤1 mm |
| Acceleration Voltage Range | 0.5–2 kV |
| Substrate Capacity | 3″ wafers × 8 pcs or 4″ wafers × 6 pcs |
| Stage Cooling | Direct-contact liquid-cooled chuck (20 cm diameter) |
| Ion Source | Kaufman-type broad-beam ion source (OEM from Kimball Physics / original Kaufman design heritage) |
| Beam Tilt Adjustment | ±15° continuous RF-driven angular control |
| Substrate Motion | Dual-axis rotation (planetary motion: rotation + revolution) |
| Power Supply Compatibility | 200–240 VAC, 50/60 Hz (field-replaceable with domestic-standard AC input modules) |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 10-M/NS-5 |
| Price Range | USD 135,000 – 205,000 |
| Substrate Diameter | 6-inch (150 mm) |
| Cooling | Direct substrate cooling with independent ion source cooling |
| Ion Source | 10 cm Kaufman-type ion source (KRI OEM) |
| Power Supply | WELL-2000 (compatible with domestic AC input upon request) |
| Beam Tilt | Adjustable RF-driven angular control (0°–90°) |
| Motion Control | Planetary rotation (substrate revolution + spin) |
| Process Environment | High-vacuum compatible (≤1×10⁻⁵ Pa base pressure, typical operating range 1×10⁻⁴–5×10⁻³ Pa) |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | NS-5 |
| Ion Source Type | Kaufman-type |
| Beam Diameter | 10 cm |
| Sample Stage Cooling | Direct-contact cryogenic cooling |
| Stage Motion | Combined rotation and revolution |
| Beam Tilt Adjustment | Fully variable (0–90°) |
| Application Scope | R&D and low-volume production |
| Substrate Compatibility | Up to 6-inch diameter wafers |
| Power Supply Compatibility | Interchangeable with domestic 220 V / 50 Hz AC input |
| Compliance | Designed for ISO Class 5 cleanroom integration |
| Brand | AYAO Instruments |
|---|---|
| Origin | South Korea |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | LithoMaskless |
| Exposure Mode | Projection-Based |
| Resolution | 0.5 µm |
| Light Source | UV LED |
| Wavelength Options | 365 nm / 385 nm / 405 nm |
| Maximum Exposure Area | 100 mm × 100 mm |
| DMD Chip Size | 0.65-inch |
| Compatibility | Broad photoresist & substrate support (Si, SiO₂, glass, quartz, flexible polymers) |
| Alignment Method | Integrated high-magnification optical alignment with real-time feedback |
| Brand | SPS-POLOS |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Category | Imported Instrument |
| Model | BEAM |
| Resolution | 0.8 µm (CD) |
| Light Source | Laser Galvanometer + 405 nm Laser Diode |
| Exposure Field | 150 mm × 150 mm |
| Substrate Compatibility | 4″–6″ wafers |
| Focus Actuation | Piezoelectric auto-focus with closed-loop optics (<1 s settling time) |
| Alignment | Semi-automatic multi-layer collimation (completed in minutes) |
| Compatible Resist | AZ5214E |
| Software Interface | GDSII-native GUI with wafer-level navigation, layer overlay, and CNC-style motion control |
| Brand | PolyPico |
|---|---|
| Origin | Denmark |
| Model | UniA6 |
| Imprint Methods | Thermal, UV (365 nm), Vacuum-assisted |
| Max Substrate/Stamp Diameter | 210 mm (8″) |
| Chamber Height | 20 mm |
| Max Imprint Pressure | 11 bar |
| Thermal Range | Up to 200 °C (optional 250 °C module) |
| UV Wavelengths | 365 nm (standard), 405 nm (optional) |
| Vacuum Level | ≤ 0.1 mbar |
| Control | Fully automated via laptop-based software |
| Form Factor | Benchtop, modular, plug-and-play |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q235 (Q-Series) |
| Type | Benchtop Microwave Plasma Asher/Stripper |
| Application Domain | Semiconductor Front-End-of-Line (FEOL) & MEMS Fabrication |
| Compliance | CE-marked, ISO 9001–certified manufacturing, compatible with cleanroom Class 100/ISO 5 environments |
| Origin | Denmark |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Uni A6 DT |
| Price Range | USD 68,000 – 109,000 |
| Brand | Raith / Simax |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | PicoMaster XF ATE-200 |
| Exposure Mode | Proximity Mode |
| Resolution | 600 nm |
| Light Source | GaN Laser Diode |
| Wavelength | 405 nm |
| Illumination Uniformity | ±5% |
| Maximum Exposure Area | 200 mm × 200 mm |
| Maximum Write Speed | 280 mm²/min |
| Minimum Feature Size | 600 nm |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | UV-300H |
| Maximum Sample Diameter | Ø800 mm (8-inch) |
| Operating Environment | Ambient Atmospheric Pressure |
| Heating Stage Temperature Range | Room Temperature to 150 °C |
| Safety Features | Interlocked Lid, Ozone Catalyst Scrubber, N₂ Purge Cycle, Thermal Fuse Protection, Emergency Stop |
| Compliance | Designed for ISO Class 5–7 Cleanroom Integration |
| Brand | SCIL |
|---|---|
| Origin | Netherlands |
| Model | LabSCIL |
| Wafer Size | Up to 8-inch (200 mm) |
| Alignment Accuracy | < 1 µm |
| Imprint Technology | Low-Force Soft-Mold Substrate-Conformal Nanoimprint |
| Compatible Resists | Thermal Sol-Gel, UV Sol-Gel, UV Organic |
| Wafer Thickness Range | 0.3–2.5 mm |
| Footprint (W×L×H) | 1.8 × 1.4 × 2.2 m |
| Resist Application | External Spin-Coater Required |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Software | SCIL Control Suite with Audit Trail & Parameter Logging |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SI 500 |
| Price | USD 295,000 (FOB Hamburg) |
| RF Source Frequency | 13.56 MHz |
| ICP Power | 1200 W |
| Bias RF Power | 600 W |
| Plasma Source | Planar Triple Spiral Antenna (PTSA) |
| Endpoint Detection | Interferometric In-situ Monitoring |
| Vacuum System | High-throughput Dry Pumping with Independent Gas Flow & Pressure Control |
| Software | SENTECH Advanced Plasma Process Control (APPC) v5.x |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | VIL1000 |
| Light Source | Coherent Laser (UV/Deep-UV or Visible, Configurable) |
| Minimum Achievable Line Width | <50 nm |
| Grating Period Range | 240–1500 nm |
| Maximum Exposure Field | 200 mm × 200 mm (8-inch wafer compatible) |
| Pattern Reconfigurability | Real-time, maskless, via beam steering optics |
| Positioning Accuracy | Sub-10 nm (closed-loop piezo stage) |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Model | YPL-NIL-SI400 |
| Temperature Range | RT to 350 °C |
| Pressure Range | 0–20 psi (on 4″ wafer) |
| Vacuum Range | 101.3 kPa to 0.1 Pa |
| UV Exposure System | Integrated |
| Sample Holder Max Diameter | 100 mm (4″) |
| Cooling | Integrated Water-Cooled System |
| Control | PLC-based with Touchscreen HMI |
| Software | Proprietary SI400 Machine Control Suite |
| Loading Method | Manual Wafer/Template Handling |
| Sealing | Bellows-Sealed Vacuum Chamber |
| Compliance | Designed for Class 100–1000 cleanroom integration |
| Brand | Sindin |
|---|---|
| Model | ST-2100MW |
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Regional Classification | Domestic (PRC) |
| Pricing | Available Upon Request |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Domestic |
| Model | VP-RS6 |
| Price Range | USD 7,000 – 14,000 |
| RF Power | 500 W |
| RF Frequency | 13.56 MHz |
| Chamber Material | 304 Stainless Steel |
| Max Operating Temperature (Chamber Wall) | ≤45 °C at Full Power (3 min) |
| Vacuum Display | Digital Pressure Readout |
| Gas Inlets | Dual Mass-Flow Controlled Ports |
| Control Interface | 7-inch Capacitive Touchscreen |
| Software Certification | China Copyright Registration No. 2021SR1026389 |
| Warranty | 24 Months Limited Hardware Warranty |
| Origin | Denmark |
|---|---|
| Manufacturer Type | Distributor |
| Origin Category | Imported |
| Model | uni A6 |
| Price Range | USD 70,000 – 112,000 |
| Brand | WUXI CAS PHOTONICS INC |
|---|---|
| Origin | Sichuan, China |
| Model | URE-2000S/25A |
| Exposure Area | 6-inch wafer |
| Exposure Wavelength | 365 nm (i-line) |
| Irradiance | >25 mW/cm² |
| Resolution | 1 µm |
| Alignment Accuracy | ±2 µm (double-side, 0.8 mm substrate thickness), ±0.8 µm (single-side) |
| Illumination Uniformity | ≤2.5% (Φ100 mm), ≤4% (Φ150 mm) |
| Mask-to-Wafer Motion Range | X: ±5 mm, Y: ±5 mm, Θ: ±6° |
| Mercury Lamp | 350 W DC, imported (OSRAM) |
| Collimation Angle | 3.5° |
| Maximum Photoresist Thickness | 350 µm (SU-8, under specified process conditions) |
| Dimensions (L×W×H) | 1300 × 900 × 1800 mm |
| Origin | Sichuan, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (China) |
| Model | G-33D4 |
| Pricing | Available Upon Request |
| Exposure Mode | Contact Printing |
| Resolution | 1 µm (at 10× line depth ratio) |
| Light Source | High-Stability 365 nm UV LED |
| Illumination Uniformity | ±3% |
| Exposure Area | 110 mm × 110 mm |
| UV Intensity Range | 0–30 mW/cm² (adjustable) |
| Beam Divergence | ≤3° |
| UV Source Lifetime | ≥20,000 hours |
| Operating Surface Temperature | ≤30 °C |
| Alignment Accuracy | ≤1 µm |
| Optical Magnification | 91× to 570× (software-enhanced digital zoom) |
| Control System | 4-inch PLC with OMRON timing relay (0.1–999.9 s exposure) |
| Vacuum System | Direct-coupled vacuum pump with dual-stage anti-vibration isolation |
| Microscopy | Dual-field upright or horizontal stereo microscope with four 1/3″ CCD cameras and real-time imaging memory |
| Brand | ZEPTOOLS |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | ZEL304G |
| Pricing | Available upon request |
| Electron Source | Schottky field-emission gun |
| Acceleration Voltage | 20 V–30 kV |
| Image Resolution | ≤1 nm @ 15 kV, ≤1.5 nm @ 1 kV |
| Minimum Beam Spot Size | ≤2 nm |
| Beam Current | ≥100 nA |
| Beam Current Density | >7000 A/cm² |
| Beam Blanking Rise Time | <100 ns |
| Writing Field | ≥500 × 500 µm |
| Minimum Single-Exposure Line Width | <15 nm |
| Stage Travel | ≥105 mm |
| Stitching Accuracy | <50 nm (mean + 1σ) |
| Overlay Accuracy | <50 nm (mean + 1σ) |
| Scan Rate | ≥20 MHz (standard), up to 50 MHz (max) |
| D/A Resolution | 20-bit |
| Dwell Time Increment | 10 ns |
| Supported File Formats | GDSII, DXF, BMP |
| Scan Modes | Raster (Z-scan), serpentine (S-scan), spiral vector scanning |
| Exposure Modes | Field calibration, field stitching, multi-layer overlay, auto-exposure sequencing |
| Optional Features | Proximity effect correction (PEC), laser interferometric stage, Faraday cup beam current monitor, TTL-compatible beam blanking (5 V), external I/O for synchronized stage motion, beam blanking, SE detection, and scan control |
| Brand | ZEPTOOLS |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | ZML10A |
| Light Source | High-Intensity LED @ 405 nm |
| Uniformity | 96% |
| Minimum Achievable Feature Size | 0.5 µm |
| Exposure Field Size | 1.2 × 0.9 mm² (at 10× objective) |