Semiconductor Instruments
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Showing 181–210 of 541 results
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Type | Mask Aligner / Stepper / Scanner |
| Technology | EUV (13.5 nm) and DUV (193 nm ArFi, 248 nm KrF, 365 nm i-line) |
| Numerical Aperture (NA) | 0.75–0.55 |
| Resolution | ≤8 nm (High-NA EUV) to ≤220 nm (i-line) |
| Overlay Accuracy | ≤1.1 nm (NXE:3800E) |
| Throughput | 160–350 wafers/hour (300 mm) |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 certified, compatible with 21 CFR Part 11 audit trails via integrated metrology interfaces |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | Twinscan NXT:1980Di |
| Light Source | ArF Excimer Laser (193 nm) |
| Numerical Aperture (NA) | 1.35 |
| Resolution (single-exposure) | ≤38 nm |
| Overlay Accuracy | <1.5 nm (3σ) |
| Throughput | 275 wafers per hour (300 mm) |
| Platform Architecture | NXT3 |
| Immersion Technology | Water-based liquid immersion |
| Compliance | SEMI S2/S8, ISO 14644-1 Class 1 Cleanroom Compatible |
| Software Interface | TWINSCAN Control System (TCS) v5.x with integrated metrology feedback loops |
| Brand | ASTRO PLASMA |
|---|---|
| Origin | Singapore |
| Model | ASTRO PACTO-100 |
| Etching Principle | 2.45 GHz Microwave Plasma |
| Maximum Substrate Size | 300 × 400 mm |
| Application Scope | Pre-bonding cleaning, surface activation, organic/oxide removal, wafer-level packaging (WLP), PDMS bonding, leadframe and PCB cleaning |
| Brand | ATI |
|---|---|
| Model | WIND |
| Category | Wafer Defect Electron Beam Inspection Equipment |
| Origin | South Korea |
| Frame Material | Hairline Stainless Steel with White Powder Coating |
| Dimensions (W×D×H) | 1900 mm × 1680 mm × 2100 mm |
| Weight | 3.5 tons |
| Wafer Compatibility | 200 mm & 300 mm bare wafers |
| Load Port Support | FOUP, open cassette, ring cassettes (8″, 12″) |
| Alignment | Dual-wafer-size auto-alignment (200/300 mm bare |
| Automation Interface | SECS/GEM compliant, SEMI E84 standard |
| Vision System | Dual-optic 2D/3D module with real-time auto-focus |
| Inspection Modes | Normal/sawing inspection, bump inspection, edge/kerf measurement, 3D bump height/warpage/coplanarity/thickness/BLT metrology |
| Algorithm | Die-to-Die (D2D) registration using optimal die selection from adjacent four dies |
| Optional Module | IR imaging for subsurface crack and silicon bulk defect detection |
| Compliance | Fully aligned with SEMI standards |
| Brand | ATI |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Instrument |
| Model | WIS-1000 |
| Instrument Type | Optical Patterned Wafer Defect Inspection System |
| Target Applications | Semiconductor Front-End Process Monitoring |
| Process Node Support | Sub-28 nm FinFET and FD-SOI Technologies |
| Compatible Wafer Sizes | 200 mm and 300 mm |
| Throughput | Up to 120 wafers per hour (depending on inspection recipe and defect density) |
| Optical Resolution | ≤ 150 nm (at λ = 405 nm, high-NA dark-field imaging) |
| Defect Detection Sensitivity | ≥ 95% for ≥ 80 nm particles and ≥ 120 nm pattern bridging/bridging defects on metal and dielectric layers |
| Compliance | ISO 9001-certified manufacturing |
| Brand | ATLANT3D |
|---|---|
| Origin | Denmark |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | NANOFABRICATOR™ LITE |
| Substrate Size | Up to 4-inch wafers |
| Process Temperature Range | 50 °C – 300 °C |
| Precursor Channels | 2 |
| Dimensions (W × H × D) | 1400 mm × 800 mm × (depth not specified) |
| Thickness Uniformity | Capable of controlled thickness gradients across substrate |
| Brand | Atometrics |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM Manufacturer |
| Regional Classification | Domestic (China) |
| Model | AM-7000 Series ER-230 |
| Pricing | Upon Request |
| Brand | Atometrics |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM Manufacturer |
| Regional Classification | Domestic (China) |
| Model | T100 |
| Pricing | Upon Request |
| Brand | Auniontech |
|---|---|
| Model | MicroFAB-3D |
| Lithography Mode | Projection-based Two-Photon Polymerization (TPP) |
| Resolution | Adjustable from 0.2 µm to 3 µm |
| Origin | Imported |
| Compliance | CE-marked for laboratory use in Class 100–1000 cleanrooms |
| Sample Stage | Motorized XYZZ (4-axis) with closed-loop positioning |
| Laser Source | Femtosecond pulsed NIR laser (typically 780–800 nm, <150 fs pulse width) |
| File Input | STL, OBJ, 3MF, G-code via proprietary slicing engine |
| Software Platform | MicroFAB Control Suite v4.x (Windows 10/11, 64-bit) |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Pumping Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint monitoring |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based PC control with recipe management and audit trail logging |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint detection |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based control with recipe management and audit trail logging |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Heating Method | Hot-Wall |
| Deposition Rate | 1 nm/s (typical, process-dependent) |
| Base Vacuum | ≤1×10⁻⁶ Torr |
| Operating Pressure Range | 2–200 mTorr |
| Chamber Internal Diameter | 6-inch (152 mm) |
| Substrate Compatibility | Up to 8-inch wafers |
| Application Domain | Semiconductor Thin-Film Fabrication |
| Brand | AXIS-TEC |
|---|---|
| Origin | Singapore |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | AX-LS100 |
| Maximum Linear Cutting Speed | 800 mm/s |
| Application Scope | Semiconductor Wafer Dicing |
| Maximum Wafer Size | 300 mm (12-inch) |
| Laser Class | Class 1 Enclosure |
| Dimensions (W×L×H) | 1530 × 900 × 2229 mm |
| Weight | 750 kg |
| Brand | AXIS-TEC |
|---|---|
| Origin | Singapore |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | AX-LS1000 |
| Maximum Linear Cutting Speed | 200 mm/s |
| Maximum Dicing Speed (YAG variant) | 140 mm/s |
| Maximum Dicing Speed (Semiconductor Laser variant) | 220 mm/s |
| Kerf Width | 30 µm |
| Cooling | Integrated Air-Cooling System |
| Configuration | T-Stage Dual-Station Platform |
| Laser Source Type | Fiber Laser (Standard), Optional YAG or Diode-Pumped Semiconductor Laser |
| Brand | Ziath |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | DP5 Decoding Software |
| Pricing | Available Upon Request |
| Brand | BEIJING EAST STAR LABS |
|---|---|
| Origin | Beijing, China |
| Model | RTP800V |
| Instrument Type | High-Vacuum Rapid Annealing Furnace |
| Sample Size | 200 mm (8-inch) wafers |
| Temperature Range | 150–1300 °C |
| Maximum Ramp Rate | 1–200 °C/s |
| Cooling Rate | ≥80 °C/s |
| Vacuum Level | ≤5×10⁻⁵ Pa (standard configuration) |
| Control Architecture | Multi-zone adaptive thermal regulation with non-PID real-time feedback |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Genesis ALD |
| Substrate Width | Up to 420 mm |
| Process Temperature | Up to 250 °C |
| Precursor Channels | Configurable (standard ≥4) |
| ALD Film Thickness Range | Up to 100 nm |
| Dynamic Deposition Rate (Al₂O₃) | 10 nm·m/min |
| Uniformity | ≤±1.5% (3σ, across full web width) |
| System Footprint | Customizable per integration requirements |
| Weight | Site-specific (typically 1,200–2,500 kg) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Model | BTF-1200C-CVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5×10⁻¹ Pa |
| Operating Pressure Range | 1.01325×10⁵ to 1.33×10⁻² Pa |
| Maximum Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Tube Diameter Options | Φ25/50/60/80/100 mm × 1000 mm |
| Heating Zone Length | 440 mm |
| Uniform Temperature Zone | 200 mm |
| Control Accuracy | ±1 °C |
| Programmable Stages | 30-segment PID with Auto-Tuning |
| Mass Flow Controllers | Triple-channel, N₂-calibrated (200/500/1000 sccm), Accuracy ±1.5% F.S., Repeatability ±0.2% F.S., Response Time (Gas): 1–4 s |
| Vacuum Pump | Rotary Vane, 10 m³/h, Ultimate Vacuum 5×10⁻¹ Pa, KF25 Inlet/Outlet, Oil Capacity 1.1 L, Noise ≤50 dB(A) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | BTF-ALD-100 |
| Precursor Configuration | 2 heated metal precursor lines (up to 200 °C) + 1 H₂O precursor line |
| Sample Capacity | Up to 4-inch wafers (100 mm), fully compatible with ≤4″ substrates |
| Uniformity | < ±1% non-uniformity over 4″ Al₂O₃ film after 300 ALD cycles |
| Base Pressure | ≤5 × 10⁻⁵ Torr (with dual-stage rotary vane pump, ≥16 m³/h) |
| Temperature Control | Substrate heating up to 300 °C (±0.5 °C) |
| Vacuum Gauge | MKS digital capacitance manometer (10⁻⁵–10⁵ Torr) |
| Sealing | Perfluoroelastomer (FFKM) O-rings, leak rate < 5 × 10⁻⁷ Pa·L/s |
| MFC Accuracy | ±1% FS for two analog mass flow controllers |
| Power Supply | 380 V AC, 50–60 Hz, 5 kW |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | Micro PECVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5 × 10⁻¹ Pa |
| Operating Pressure Range | 1.01325 × 10⁵ Pa to 1.33 × 10⁻² Pa |
| RF Power Output | 0–150 W |
| RF Interface | 50 Ω, N-type female |
| Power Stability | ≤5 W |
| Harmonic Content | ≤−50 dBc |
| Max. Heating Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Effective Chamber Dimensions | Φ25 mm / Φ50 mm (Customizable Tube Diameter) |
| Chamber Material | Alumina + High-Temperature Ceramic Fiber |
| Thermocouple Type | K-type |
| Temperature Control Accuracy | ±1 °C |
| Control Mode | 30-Stage Programmable PID with Auto-Tuning |
| Heating Zone Length | 230 mm |
| Heating Element | Resistance Wire |
| Power Supply | Single-phase, 220 V, 50/60 Hz |
| Total System Power | 1 kW |
| Pumping Speed | 10 m³/h |
| Ultimate Vacuum (with Pump) | 5 × 10⁻¹ Pa |
| Vacuum Gauge Range | −0.1 to 0.15 MPa (0.01 MPa/div) |
| Mass Flow Controllers | Triple-channel, Stainless Steel Dual-Ferrule Fittings |
| Standard N₂ Flow Ranges | 200 / 500 / 1000 sccm (Customizable) |
| MFC Accuracy | ±1.5% FS |
| Linearity | ±1% FS |
| Repeatability | ±0.2% FS |
| Response Time (Gas) | 1–4 s |
| (Electrical) | 10 s |
| Working Pressure Drop | 0.1–0.5 MPa |
| Max. Inlet Pressure | 3 MPa |
| Cooling | Forced Air |
| Ambient Temp. Range | 5–45 °C |
| Relative Humidity | ≤85% RH |
| Noise Level | ≤50 dB(A) |
| Vacuum Interface | KF25 (Inlet & Exhaust) |
| Vacuum Connection | Bellows + Manual Gate Valve |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Model | BTF-1200C-RTP-CVD |
| Temperature Range | 100–1000 °C |
| Max Heating Rate | 50 °C/s |
| Max Operating Temperature | 1200 °C |
| Vacuum Base Pressure | 5.0×10⁻¹ Pa (cold, empty) |
| Heating Zone Length | 230 mm |
| Uniform Zone Length | 120 mm |
| Temperature Repeatability | ±3 °C |
| Control Accuracy | ±0.1 °C |
| Furnace Tube | High-Purity Quartz, Φ90×400 mm, R45 end cap |
| Gas Flow Controllers | Dual-stainless-steel double-ferrule fittings, N₂-calibrated ranges 200/500 sccm, accuracy ±1.5%, repeatability ±0.2%, response time 1–4 s (gas), 10 s (electrical) |
| Vacuum Pump | KF25 inlet/outlet, 165 L/min pumping speed, 1.1 L oil capacity |
| Brand | budatec® |
|---|---|
| Origin | Germany |
| Model | VS 160 |
| Chamber Size | 160 × 160 mm² |
| Max. Chamber Height | 50 mm |
| Max. Process Temperature | 450 °C |
| Heating/Cooling Rate | up to 3 K/s |
| Atmosphere Control | Programmable N₂, N₂/H₂ (95/5), or Formic Acid (HCOOH) via Proportional Flow Valves |
| Temperature Monitoring | Independent Thermocouple Feedback Loop |
| Max. Load Capacity | 2.5 kg |
| Power Supply | 400 V / 16 A |
| Cooling Water Requirement | 10 slm |
| Process Visualization | Real-time Graphical Component Overview |
| Key | Origin: Imported |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Model | Eagle-I |
| Inspection Speed | 50 million bump measurement points per wafer |
| 2D Detection Accuracy | 0.2 µm |
| 3D Height Measurement Accuracy | 0.05 µm (Measurement Range: 2–100 µm) |
| Origin | Imported |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Model | CAMTEK Eagle-I / Eagle-AP / EagleT-i |
| Price Range | USD 650,000 – 1,050,000 |
| Inspection Throughput | Up to 50 million bump measurement points per wafer |
| 2D Detection Resolution | 0.2 µm |
| 3D Height Measurement Accuracy | ±0.05 µm (Measurement Range: 2–100 µm) |
| Minimum Detectable Feature Size | 2 µm bump / 2 µm line width |
| Defect Sensitivity | Down to 0.2 µm surface anomalies |
| Origin | Imported |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Model | EagleT-i |
| Price Range | USD 650,000 – 1,050,000 |
| Inspection Speed | Up to 50 million bump measurement points per wafer |
| 2D Detection Accuracy | 0.2 µm |
| 3D Height Measurement Accuracy | 0.05 µm (Measurement Range: 2–100 µm) |
| Minimum Detectable Line Width/Spacing | 2 µm (post-RDL) |
| Defect Detection Limit | 0.2 µm surface anomalies |
| Compatible Substrates | Flat and warped wafers, square dies, compound semiconductor substrates |
| Brand | Camtek / FRT |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | MicroProf®100 |
| Detection Speed | Up to 50 million measurement points per wafer |
| 2D Lateral Resolution | 0.2 µm |
| 3D Vertical Height Accuracy | ±0.05 µm (measuring range: 2–100 µm) |
| Dual-Sided Measurement Capability | Yes (TTV/Bow/Warp/TIR/LTV) |
| Optical Principle | White-light Interferometry & Chromatic Confocal Sensing |
| Optional IR Sensor | Integrated for backside thickness monitoring of Si, GaAs, InP, SiC, GaN wafers |
| Compliance | SEMI Standard-compliant dual-probe architecture |
| Form Factor | Compact benchtop metrology platform |
| Brand | Canon (Japan) |
|---|---|
| Origin | Japan |
| Equipment Type | Mask Lithography System (Stepper/Scanner/NIL) |
| Wafer/Substrate Compatibility | 200 mm, 300 mm, Gen 8.6 to Gen 10.5 FPD glass |
| Resolution | ≤65 nm (KrF stepper, with multi-patterning), 0.18–0.35 µm (i-line/KrF), 1–2 µm (packaging), 3–5 µm (FPD), <10 nm (NIL, theoretical) |
| Exposure Source | i-line (365 nm), KrF (248 nm), NIL UV imprint |
| Alignment Accuracy | ±0.5 µm (FPA-5520iV) |
| Throughput | ~100–120 wph (300 mm, FPA-8000 series) |
| Compliance | ISO 14644-1 Class 5 cleanroom compatible, SEMI S2/S8 certified, supports GLP/GMP-aligned process documentation |
| Brand | Canon |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | FPA5000 ES4 |
| Resolution | 0.13 µm |
| Exposure Wavelength | 248 nm |
| Maximum Exposure Field | 26 mm × 33 mm |
| Numerical Aperture (NA) | 0.5–0.8 |
| Reduction Ratio | 4:1 |
| Overlay Accuracy | ±25 nm |
| Brand | CEL |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Origin Category | Domestic (China) |
| Model | CEL-RCCO |
| Price | USD 2,800 (FOB Beijing) |
| Active Area | 20 mm × 20 mm |
| Spectral Response Range | 400–1100 nm |
| Calibration Irradiance | 1000 W/m² (AM1.5G) |
| Calibration Temperature | 25 °C ± 0.1 °C |
| Temperature Sensor | Calibrated Pt100 (4-wire Kelvin connection) |
| Window Material | Space-grade radiation-hardened glass |
| Encapsulation | Hermetic epoxy-sealed aluminum housing with optical-grade UV-curable adhesive |
| Output Connectors | Dual LEMO FGG.0B.304.CLAD series (Isc/Voc + Pt100) |
| Short-Circuit Current Temperature Coefficient (α) | Typically −0.05 to −0.07 mA/°C |
| Open-Circuit Voltage Temperature Coefficient (β) | Typically −1.8 to −2.2 mV/°C |
| Stability | < ±0.5% Isc drift over 1,000 h under continuous 1-sun illumination |
| Traceability | NIST-traceable calibration via accredited ISO/IEC 17025 laboratory (certificate included) |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | centrotherm Activator150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6-inch) wafers |
| Operating Atmosphere | Ambient pressure or controlled vacuum/pressure |
| Maximum Ramp Rate | 150 K/s |
| Maximum Cool-down Rate | 150 K/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ≥95% across wafer surface |
| Max Process Temperature | 1850 °C |