Semiconductor Instruments
Filter
Showing 211–240 of 544 results
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Centrotherm c.RAPID 150 / RTP 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 6-inch wafer or substrate |
| Operating Atmosphere | Ambient pressure or controlled vacuum (1–50 mbar) |
| Max. Ramp Rate | 150 K/s |
| Max. Cool-down Rate | 150 K/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±0.5 °C across 6″ wafer |
| Max. Process Temperature | 1150 °C (unlimited dwell at ≤750 °C) |
| Heating System | 24 independently PWM-controlled lamp arrays |
| Cooling Water Requirement | 20 L/min |
| Exhaust Flow | 250 m³/h |
| Substrate Compatibility | Si, GaAs, SiC, GaN, Sapphire, graphite carriers |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | NS200 |
| Price | USD 84,000 (FOB Shenzhen) |
| Measurement Principle | Contact-mode stylus profilometry with LVDC capacitive transduction |
| Vertical Resolution | Sub-ångström (≤0.1 Å) |
| Lateral Scan Range | 55 mm |
| X/Y Stage Travel | 150 mm × 150 mm (motorized) |
| R-θ Stage | 360° continuous motorized rotation |
| Max Sample Thickness | 50 mm |
| Wafer Compatibility | 150 mm (6″) and 200 mm (8″) |
| Vertical Measurement Range | Up to 1000 µm |
| Force Control | 1–50 mg adjustable, electromagnetic micro-force actuation |
| Probe Tip Radius | 2 µm diamond |
| Optical Navigation | 5 MP color camera with real-time probe trajectory overlay |
| SPC Module | Integrated statistical process control with trend charts, Cp/Cpk, histogram, and outlier detection |
| Environmental Requirements | 16–25 °C (ΔT < 2 °C/h), 30–40% RH (non-condensing), floor vibration ≤ 6.35 µm/s (1–100 Hz), ambient noise ≤ 80 dB, laminar airflow ≤ 0.508 m/s downward |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | WD4000 |
| Price | USD 420,000 (FOB Shenzhen) |
| Thickness Range | 150 µm – 2000 µm |
| TTV/Bow/Warp Measurement Accuracy | ±0.1 µm (typical, calibrated per ISO 21287) |
| Z-Axis Resolution (Interferometry) | ≤ 0.1 nm |
| Lateral Scan Area | 400 mm × 400 mm |
| Vertical Travel | 75 mm |
| Maximum Wafer Size | 300 mm (12″) |
| Surface Reflectivity Range | 0.05% – 100% |
| Roughness RMS Repeatability | ≤ 0.005 nm (ISO 25178-6 compliant) |
| Interferometric Objective Options | 2.5×, 5×, 10×, 20×, 50× |
| Spectral Confocal Thickness Sensor | Dual-beam, high-stability SLED source, 90 µm measurement range (n = 1.5), minimum detectable thickness: 0.4 µm |
| Infrared Interferometry Module | SLED source, 37–1850 µm range |
| Scan Modes | Full-map, cross (‘X’), star (‘+’), user-defined multi-point |
| Compliance | ISO 5725 (accuracy & precision), ISO 25178-2 (areal texture), ISO 10110-7 (optical surface form), SEMI D39 (wafer geometry), ASTM F39 (silicon wafer bow/warp) |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Model | WD4000 |
| Thickness Range | 150 µm – 2000 µm |
| 3D Surface Topography Resolution (Z) | ≤ 0.1 nm |
| Roughness RMS Repeatability | ±0.005 nm |
| Supported Wafer Sizes | 4″, 6″, 8″, 12″ |
| Optical Principle | Spectral Confocal Dual-Side Scanning + White-Light Interferometry (WLI) |
| Max XY Travel | 400 mm × 400 mm |
| Z Travel | 75 mm |
| Scan Modes | Full-map, Cross (‘+’), Custom Multi-point |
| Interferometric Objective Options | 2.5×, 5×, 10×, 20×, 50× |
| Reflectivity Range | 0.05% – 100% |
| Film Thickness Range (IR Interferometry) | 37 µm – 1850 µm (n ≈ 1.5) |
| Minimum Detectable Film Thickness | 0.4 µm |
| Vacuum Chuck | ESD-Safe Perforated Ceramic Vacuum Stage |
| Brand | Chotest |
|---|---|
| Origin | Guangdong, China |
| Model | WD4000 |
| Measurement Principles | Spectral Confocal Reflectometry (thickness), White-Light Interferometry (3D topography) |
| Wafer Compatibility | 4″–12″ |
| Max. Scan Area | 400 mm × 400 mm |
| Z-Axis Resolution | ≤ 0.1 nm |
| Thickness Range | 150 µm – 2000 µm |
| Surface Reflectivity Range | 0.05% – 100% |
| Roughness RMS Repeatability | ±0.005 nm |
| Motion Stage | Granite-based龙门 with AC servo direct-drive & 0.1 µm encoder resolution |
| Environmental Isolation | Active vibration damping for sub-nm stability |
| Brand | CIF |
|---|---|
| Model | SC1 |
| Type | Benchtop Precision Spin Coater |
| Rotation Speed Range | 0–10,000 rpm |
| Speed Accuracy | ±1% |
| Acceleration Rate | 0–10,000 rpm/s |
| Substrate Compatibility | Ø150 mm (6-inch) wafers, square substrates up to 105 × 105 mm |
| Chamber Diameter | 180 mm |
| Drive System | Closed-loop servo motor with digital tachometric feedback |
| Control Interface | 7-inch full-color capacitive touchscreen (bilingual English/Chinese) |
| Programmability | Standard 10-step gradient program |
| Safety | Dual interlocked lid with electromagnetic cut-off, PTFE-embedded tempered glass upper chamber, vacuum-sealed chuck interface, triple-seal sample tray mounting |
| Construction | Powder-coated stainless steel housing |
| Chamber Lining | PTFE |
| Chuck Material | NPP-H polypropylene (acid/alkali resistant) |
| Optional Accessories | N₂ purge kit, N₂ inert atmosphere module, automated dispense system, manual dropper kit |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Combinatorial PLD System |
| System Type | Turnkey Pulsed Laser Deposition Platform with Continuous Composition Spread (CCS-PLD) Capability |
| Substrate Compatibility | 2-inch wafers (4-inch and 6-inch available on request) |
| Operating Environment | Up to 800 °C, up to 500 mTorr O₂ partial pressure |
| Deposition Mode | Standard PLD + CCS-PLD (Continuous Composition Spread) |
| Target Configuration | Multi-target carousel for binary/ternary/quaternary combinatorial synthesis |
| Film Architecture Support | Epitaxial thin films, multilayer heterostructures, superlattices |
| Oxygen Compatibility | Fully compatible with reactive oxygen ambient for metal oxide epitaxy |
| Post-deposition Annealing | Not required due to in-situ compositional grading and kinetic control |
| Maskless Operation | Enabled by angular deposition gradient and laser fluence modulation |
| Layer Resolution | Sub-monolayer precision per pulse cycle |
| Compliance | Designed for GLP-compliant thin-film R&D environments |
| Brand | Coruna |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Regional Category | Domestic (PRC) |
| Model | Screen Printer |
| Price | USD 1.00 (FOB Jiangsu, Ex-Works) |
| Brand | CTS |
|---|---|
| Origin | South Korea |
| Model | AP200 |
| Wafer Size Compatibility | 4", 6", 8" |
| Platen Count | 1 |
| Platen Speed | 0–200 rpm |
| Polishing Head Speed | 0–200 rpm |
| Polishing Head Oscillation Range | ±15 mm |
| Pressure Control Zones | 3 (Center, Edge, Retaining Ring) |
| Pressure Range | 0.14–14 psi |
| Platen Diameter | 20 in |
| Slurry Flow Rate | 20–500 cc/min (via dual peristaltic pumps) |
| Conditioning Head | 10-zone segmented actuation |
| Conditioning Sweep Speed | 10 sweeps/min |
| Conditioning Downforce | 3–20 lbs |
| Conditioning Speed | 0–150 rpm |
| Within-Wafer Non-Uniformity (WIWNU, 5-mm edge exclusion) | <5% (1σ) |
| Wafer-to-Wafer Non-Uniformity (WTWNU, 5-mm edge exclusion) | <3% (1σ) |
| Dimensions (W×L×H) | 1000 × 2030 × 2100 mm |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Manufacturer Type | Authorized Distributor |
| Regional Category | Domestic (PRC) |
| Model | Not Specified |
| Pricing | Upon Request |
| Measurement Principle | Non-Dispersive Infrared (NDIR) |
| Range Options | 0–5% v/v, 0–10% v/v, 0–30% v/v |
| Accuracy | ≤ ±2% FS |
| Repeatability | ≤ ±1% FS |
| Response Time (T90) | ≤ 60 s |
| Operating Temperature | 0–50 °C |
| Relative Humidity | 0–95% RH (non-condensing) |
| Communication Interfaces | RS-232, RS-485 |
| Power Supply | 24 VDC or 100–240 VAC |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2060 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | SiF₄, CF₄, SF₆, NF₃, CO₂ |
| Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% of reading |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing | 316L stainless steel, CF-40 flange compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | ≤200 mTorr (vacuum-compatible) |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2061 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | WF₆, CF₄, SF₆, NF₃, CO₂ |
| Measurement Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output Interface | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing Material | 316L Stainless Steel |
| Process Connection | CF-35 or ISO-KF40 Flange Compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | Up to 200 mTorr (absolute) |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Gasboard-3053 |
| Measurement Range | 0–10 / 0–100 / 0–1000 ppm & 0–25% O₂ (auto-ranging) |
| LOD | 0.5 ppm |
| Resolution | 0.1 ppm |
| Accuracy | ≤±2% F.S. or ±0.5 ppm (whichever is greater) |
| T90 Response Time | ≤10 s |
| Warm-up Time | ≤20 min |
| Zero Drift | ±0.5% F.S. |
| Span Drift | ±0.5% F.S. |
| Repeatability | ±0.5% F.S. |
| Sampling Flow | 0.5–1 L/min |
| Communication | RS-232, RS-485 |
| Gas Interface | 1/4″ VCR-F (inlet & outlet) |
| Dimensions (L×W×D) | 210×134×300 mm |
| Operating Temp. | 0–50 °C |
| Humidity | 0–95% RH (non-condensing) |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-CVD1200-50 |
| Heating Method | Resistive Tube Furnace (Dual Independent Zones) |
| Maximum Operating Temperature | 1100 °C |
| Vacuum Level | ≤1.0 × 10⁻³ Pa (with Molecular Pumping System) |
| Tube Dimensions | Ø50 mm × 1000 mm (quartz), optional diameters up to Ø100 mm |
| Heating Zone Configuration | 2 × 200 mm independent zones |
| Temperature Uniformity | ±5 °C over 100 mm zone length |
| Temperature Control | 50-segment programmable PID |
| Gas Channels | 3 (N₂, H₂, Ar configurable) |
| Mass Flow Accuracy | ±2.0% FS |
| Gas Inlet/Outlet Interface | 1/4″ VCR + KF16/KF25/KF40 vacuum flanges |
| Pressure Measurement Range | 10⁵ Pa to 1 × 10⁻⁵ Pa (composite gauge) |
| Power Supply | AC 220 V, 50/60 Hz |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-MSV325-II |
| Instrument Category | DC Magnetron Sputtering System |
| Application Field | Microelectronics |
| Substrate Diameter | 100 mm |
| Maximum Substrate Temperature | 500 °C |
| Base Pressure | ≤1.0 × 10⁻⁵ Pa |
| Power Supply | Dual 500 W DC |
| Target Configuration | Two Independent 1" or 2" Magnetron Sources |
| Vacuum Chamber | Ø325 mm × 500 mm, SUS304 Stainless Steel |
| Sample Stage | Ø150 mm, Heated (up to 600 °C, ±1 °C stability), Rotatable (0–20 rpm) |
| Gas Control | Standard 1-channel MFC (Ar, 200 SCCM), Optional up to 4-channel MFC |
| Vacuum Pumping | Turbo-molecular pump system (600 L/s nominal speed), Integrated solenoid-valve gas ballast for venting without pump shutdown |
| Optional In-situ Monitoring | Quartz Crystal Thickness Monitor (0.10 Å resolution) |
| Dimensions (W×D×H) | 540 × 540 × 1000 mm |
| Weight | 145 kg |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Equipment Type | DC Magnetron Sputtering Coater |
| Application Field | Microelectronics |
| Substrate Diameter | 100 mm |
| Maximum Substrate Temperature | 500 °C |
| Base Vacuum | 1.0 × 10⁻⁴ Pa |
| Chamber Material | High-Purity Fused Quartz |
| Chamber Dimensions | Ø180 mm × 200 mm |
| Observation Window | Full-360° Transparent Quartz Viewport |
| Target Size | Ø50 mm (2-inch), Thickness ≤ 3 mm |
| DC Power Supply | 300 W, Adjustable |
| Pumping Speed | Turbo Molecular Pump — 600 L/s |
| Vacuum Gauge | Composite Gauge (10⁻⁵–10⁵ Pa) |
| Sample Stage | Rotating & Heated |
| Interface | Intuitive Modular Control Panel |
| Overall Dimensions | 550 mm × 350 mm × 1200 mm |
| Total Power Consumption | 2 kW |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-PECVD100-1200 |
| RF Power Supply | 13.56 MHz ±0.005%, 0–300 W output, max reflected power 100 W, reflected power <3 W at full power, stability ±0.1% |
| Tube Material | High-purity quartz |
| Tube OD | 100 mm |
| Furnace Length | 440 mm |
| Heating Zone | Dual-zone (2 × 200 mm) |
| Max Continuous Operating Temperature | 1100 °C |
| Temperature Control Accuracy | ±1 °C |
| Temperature Program | 30-segment programmable PID via LCD touchscreen |
| Vacuum Seal | 304 stainless steel flange |
| Base Pressure | 0.1 Pa (via dual-stage rotary vane pump, 1.1 L/s) |
| Working Pressure Range | –0.15 MPa to +0.15 MPa |
| Gas Channels | 6 independent MFC-controlled lines (H₂, CH₄, C₂H₄, N₂, NH₃, Ar) |
| MFC Ranges | A–C: 0–200 SCCM |
| D–F | 0–500 SCCM |
| MFC Accuracy | ±1.5% F.S. |
| Gas Mixing Tank Volume | 1 L |
| Vacuum Interface | KF16 |
| Gas Fitting | 1/4" VCR-style compression fittings |
| Cooling | Motorized sliding furnace rail for rapid thermal quenching |
| Power Input | AC 220 V, 50 Hz |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Equipment Type | Standard High-Vacuum RTP Furnace |
| Sample Chamber Dimensions | 650 × 1200 × 650 mm (D×W×H) |
| Operating Temperature Range | ≤1000 °C continuous, up to 1050 °C peak |
| Max Recommended Ramp Rate | ≤80 °C/s |
| Maximum Ramp Rate | 200 °C/s |
| Cooling Time from >200 °C | ≤25 min |
| Heating Zone Length | 400 mm |
| Chamber Atmosphere | Vacuum-compatible (optional low/high vacuum systems) |
| Power Supply | AC 220 V, 50/60 Hz, 45 kW |
| Net Weight | 185 kg |
| Heating Element | Imported IR Lamps |
| Temperature Sensor | N-type thermocouple (optional embedded thermocouple for sample-surface monitoring) |
| Control System | Touchscreen PID with auto-tuning, 8-segment programmable ramp/soak profiles |
| Accuracy | ±1 °C |
| Vacuum & Gas Interfaces | Standardized quick-connect ports for vacuum lines and multi-channel gas manifolds |
| Communication | RS-485 interface for PC integration via proprietary software |
| Brand | DAIN HITECH |
|---|---|
| Origin | South Korea |
| Model | DH-OBCP5000 |
| Wafer Compatibility | 6", 8", 12" (flat & notch) |
| OCR Recognition Rate | ≥99.8% |
| Throughput | 90 wafers/hour (12" standard orientation) |
| Printing Method | Thermal Transfer |
| Print Resolution | 305 dpi |
| Max Print Speed | 150 mm/s |
| Label Dimensions | 22–131 mm (W) × 6–356 mm (L) |
| ESD Protection | <100 V (10 s) |
| Acoustic Noise | ≤70 dB(A) |
| UPS Backup Duration | 3 min |
| Safety | Dual emergency stop buttons, magnetic safety sensors on all access doors |
| Software Features | MES integration (T-card scanning), dual-label printing mode, post-print barcode verification, server-based auto-backup, wafer mapping synchronization |
| Brand | ECOPIA |
|---|---|
| Origin | South Korea |
| Model | EPS-300 / EPS-500 / EPS-1000 |
| Type | Manual probe station |
| Category | Temperature-controlled probe station |
| Compliance | Designed for ISO/IEC 17025-compliant lab environments, compatible with ASTM F1768 and SEMI S2/S8 safety standards |
| Software Interface | Analog signal output (BNC), optional digital I/O for external controller integration |
| Stage Travel | X/Y fine adjustment via micrometer drives (10 µm resolution), Z-axis manual lift with locking mechanism |
| Maximum Wafer Size | EPS-300: up to 4″ |
| EPS-500 | up to 6″ |
| EPS-1000 | up to 8″ |
| Thermal Options | Optional heated chuck (−40 °C to +200 °C) available on EPS-500 and EPS-1000 |
| Vacuum Compatibility | Standard vacuum-compatible baseplate (10⁻³ mbar) for glovebox or controlled-atmosphere integration |
| Brand | ECOPIA |
|---|---|
| Origin | South Korea |
| Model | HMS-3000 / HMS-5000 |
| Current Source Range | 1 nA – 20 mA |
| Resistivity Range | 10⁻⁵ – 10⁷ Ω·cm |
| Carrier Concentration Range | 1×10⁷ – 1×10²¹ cm⁻³ |
| Mobility Range | 1 – 1×10⁷ cm²/V·s |
| Magnetic Field Options | 0.37 T, 0.55 T, 1 T fixed |
| Sample Temperature | Ambient or 77 K (liquid nitrogen) |
| Sample Size Compatibility | 5×5 mm to 20×20 mm (optional 30 mm or 2-inch wafers) |
| Software Platform | Windows XP–10 compatible |
| Compliance | CE certified (July 2004) |
| Brand | ECOPIA |
|---|---|
| Origin | South Korea |
| Model | RTP-1300 |
| Sample Size | 150 mm (6-inch compatible) |
| Max Temperature | 1200 °C |
| Max Ramp Rate | 150 K/s |
| Cool-down Rate | 200 K/s |
| Temp Accuracy | ±1% of setpoint |
| Temp Uniformity | ±1.5% across wafer |
| Atmosphere Options | Vacuum (10⁻³ Torr, optional mechanical pump), N₂, O₂, H₂, Ar, or ambient air |
| Heating Source | 12 or 18 halogen infrared lamps (1.2 kW each) |
| Control Software | Integrated RTP-specific GUI with recipe management, real-time profiling, and data logging |
| Power Supply | 220 V AC, single- or three-phase |
| Dimensions (W×D×H) | 500 × 400 × 500 mm |
| Net Weight | 60 kg |
| Brand | ELIONIX INC. |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | ELS-F150 |
| Price Range | USD 1.6–2.7 million (FOB Japan) |
| Brand | ZENO |
|---|---|
| Model | E100 |
| Type | Spectroscopic Ellipsometer |
| Form Factor | Benchtop |
| Measurement Principle | Null- and Rotating-Analyzer-Based Spectroscopic Ellipsometry (SE) |
| Wavelength Range | 240–1700 nm (configurable UV-VIS-NIR) |
| Spot Size | Standard 3 mm Ø |
| Substrate Compatibility | 4″ to 12″ wafers, irregular shapes, rigid/flexible substrates |
| Measured Parameters | Film thickness (sub-nm resolution), complex refractive index (n + ik), extinction coefficient (k), interfacial roughness, optical bandgap |
| Precision | ≤0.01 nm RMS repeatability on SiO₂/Si reference samples (t < 30 nm, n=30 measurements) |
| Compliance | ASTM F1599, ISO 15632, SEMI MF1530 |
| Software | ZENO-EllipSuite v4.x with GLP-compliant audit trail, user role management, and 21 CFR Part 11-ready data export |
| Automation Options | Motorized XYZ stage, auto-alignment module, wafer handler integration |
| Origin | Shanghai, China |
| Distribution | Authorized Global Distributor Network |
| Brand | EMU |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Batch Aligner and Elevator |
| Wafer Diameters Supported | 75 mm, 100 mm, 125 mm, 150 mm, 200 mm |
| Alignment Reference | Flat or Notch |
| Lifting Mechanism | Dual Non-Vacuum Comb Lifters |
| Illumination | Configurable LED (Standard: Red or White) |
| Substrate Compatibility | Si, SiC, GaN, and Other Compound Semiconductors |
| Interface | Touchscreen HMI with Angle Selection for Edge Alignment |
| Brand | EMU |
|---|---|
| Origin | UK |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | IDWR |
| Price Range | USD 14,000 – 72,000 (FOB) |
| Compatible Wafer Diameters | 75 mm, 100 mm, 125 mm, 150 mm, 200 mm |
| Throughput | 25 wafers per batch in ≤ 120 seconds (including cassette mapping, batch alignment, and full-surface ID reading) |
| Imaging System | Cognex In-Sight 1741 Smart Camera |
| Read Targets | Laser-etched marks and Data Matrix codes on wafer frontside and backside |
| Interface Protocols | RS-232, Ethernet, SECS/GEM compliant |
| User Interface | Integrated industrial touchscreen with recipe management and maintenance diagnostics |
| Brand | EMU |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Selective Wafer Elevator |
| Wafer Diameters Supported | 75 mm, 100 mm, 125 mm, 150 mm, 200 mm |
| Operation Mode | Manual Actuation with Indexed Slot Selection (e.g., slots 1, 6, 11, 16, 21) |
| Construction Materials | Cleanroom-Compatible Organic Polymers and Non-Shedding Structural Components |
| Compliance | Designed for ISO Class 1–5 Cleanroom Environments |
| Substrate Compatibility | Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Sapphire, SOI |
| Brand | EMU |
|---|---|
| Origin | United Kingdom |
| Model | SMIF Batch ID Reader |
| Wafer Size | 200 mm |
| Integration Interface | GEM300 / SEMI E84 |
| Cycle Time | < 3 minutes |
| System Architecture | Integrated KUKA robotic handler + SMIF load port + IDWR200SMIF reader module |
| Application Scope | Automated wafer lot tracking, SMIF pod-to-pod transfer, front-end fab traceability |
| Brand | EMU |
|---|---|
| Origin | UK |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | SPPE |
| Throughput | 400 WPH |
| Wafer Diameters Supported | 75 mm / 100 mm, 125 mm / 150 mm, and 150 mm / 200 mm |
| ESD Protection | Full Integrated ESD-Safe Architecture |
| Compatibility | Si, SiC, GaN, and Other Semiconductor Substrates |
| Control System | Embedded PC with Touchscreen HMI |
| Interface Options | SECS/GEM Compliant |
| Cassette Handling | Auto-mapping with Dual-Slot & Cross-Loading Detection |
| Safety | Real-time Wafer Presence & Edge Detection Sensors |
| Brand | Endress+Hauser Metrology |
|---|---|
| Country of Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | MX 203 |
| Pricing | Upon Request |
| Wafer Diameter Range | 50 mm – 450 mm (2″ – 18″) |
| Thickness Accuracy | ±0.5 µm |
| Thickness Resolution | 50 nm |
| Thickness Measurement Range | 100 µm – 1000 µm |
| Measurement Principle | Dual-Sided Capacitive Sensing |
| Automation Level | Manual Operation |
| Compatible Substrates | Si, SiC, GaN, GaAs, InP |