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| Brand | Sigray |
|---|---|
| Origin | Shanghai, China |
| Model | AttoMap-310 |
| Spatial Resolution (with high-res optics) | 3–5 µm |
| Detection Sensitivity | sub-ppm (relative), femtogram-level (absolute) |
| Incident Angle Range | 3° to 90° (0.01° step) |
| X-ray Source | Patented microfocus source with up to 5 selectable anode targets (e.g., Si, Cr, Cu, Rh, Mo, W, Au, Ti, Ag) |
| Max Power / Voltage | 50 W / 20–45 kVp |
| X-ray Optics | Dual-parabolic grazing-incidence mirrors, ~80% transmission efficiency, 1:1 default magnification |
| Detector | Silicon Drift Detector (SDD), energy resolution <129 eV (Mn-Kα) |
| Vacuum Chamber | <10⁻⁴ Torr |
| Sample Stage Travel | 100 × 100 mm |
| Light Element Detection Limit | Down to boron (B), quantitative for C, N, O at <1% wt. |
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