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Shanghai Jianfeng Optoelectronic Technology Co., Ltd.

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BrandAOE Tech
ModelTNSLM017-A
TypePhase-Modulating SLM
Liquid Crystal ModeTN-type TFT-LCD
Pixel Count1024 × 768
Pixel Pitch36 µm
Active Area1.8" (36.6 mm × 27.4 mm)
Optical Efficiency36% @ 632 nm
Wavefront Flatnessλ/3–λ/5
Contrast Ratio400:1
Aperture Fill Factor70%
Spectral Range380–1200 nm
Anti-Reflection CoatingRₐᵥg < 1% (380–750 nm or 750–1200 nm)
Damage Threshold2 W/cm²
Response Time17 ms (rise), 30 ms (fall)
Data InterfaceVGA (standard), DVI/USB (optional)
Frame Rate60–80 Hz
Pixel Clock66 MHz
Control InterfaceRS-232 serial
Software PlatformWindows XP/2000 compatible
Power Supply16 V, 1 A
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BrandAOE Tech
OriginShanghai, China
Manufacturer TypeAuthorized Distributor
Product TypeGas Laser System
ModelJF500HN
Output Power Range1.5–30 mW (CW)
Beam ModeTEM₀₀
Beam Diameter (1/e²)0.63–1.15 mm
Beam Divergence (1/e²)≤1.32 mrad
PolarizationRandom or Linear (selectable)
Power Stability≤±1% (over 8 hrs)
Laser Head Dimensions240.03×35.1 mm to 550.3×46.5 mm (L×D, model-dependent)
ConstructionSeparated Laser Tube & Power Supply Architecture
Laser Tube OriginUSA-sourced sealed He-Ne tube
Sealing TechnologyHard-seal glass-metal hermetic encapsulation
Typical Lifetime>20,000 hours
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BrandAOE Tech
OriginShanghai, China
ModelRSLM-HD70-A/P
Modulation TypeAmplitude & Phase
LCD TechnologyReflective LCoS
Resolution1920 × 1080 pixels
Pixel Pitch8.0 µm
Active Area15.36 mm × 8.64 mm
Grayscale Depth8-bit (256 levels)
Phase Range≥2π @ 632 nm
Contrast Ratio>2000:1
Fill Factor>87%
Diffraction Efficiency75% @ 550 nm
Frame Rate60–480 Hz (configurable)
Spectral Range420–1100 nm
InterfaceDVI
Operating Temperature−5 °C to +55 °C
Max Incident Power Density2 W/cm²
Drive VoltageDC +4.5 V to +5.5 V / 2 A
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BrandAOE Tech
OriginShanghai, China
ModelRSLM-HD70-A
Modulation TypeAmplitude & Phase
LCD TypeReflective LCOS
Gray Levels8-bit (256 levels)
Resolution1920 × 1080 pixels
Pixel Pitch8.0 µm
Active Area15.26 mm × 8.64 mm
Phase Range1.2π @ 532 nm
Contrast Ratio>2000:1
Fill Factor>87%
Frame Rate60 Hz
Operating Temperature−40 °C to +55 °C
Diffraction Efficiency75% @ 550 nm
Maximum Incident Power Density2 W/cm²
Spectral Range420–1100 nm
Data InterfaceDVI
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BrandAlphalas
OriginGermany
ModelPICOPOWER-LD
Wavelength Options375, 405, 450, 488, 635, 670, 785, 976, 1030, 1064, 1300, 1550 nm (custom wavelengths available)
Pulse Width<40–80 ps (wavelength-dependent)
Repetition Rate0.1 Hz to 20 MHz (optional up to 80 MHz)
Peak PowerUp to 3 W (wavelength- and configuration-dependent)
Average Power0.2–1.0 mW @ 20–40 MHz
Beam Divergence0.5–1.5 mrad
OutputFree-space collimated (TEM₀₀, elliptical) or fiber-coupled (SMF/PMF options)
Operating Temperature15–35 °C
Laser Head DimensionsØ25 × 125 mm
Driver Dimensions (PLDD-100-40)235 × 110 × 280 mm
WeightLaser Head 120 g, Driver 2.6 kg
ComplianceCE, RoHS, IEC 60825-1:2014 (Laser Class 1M or 3B per wavelength)
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BrandAlphalas
OriginGermany
ModelUPD
Spectral Range170–2600 nm
Rise Time15–500 ps
BandwidthDC to 25 GHz
Detector MaterialsSi, GaAs, InGaAs, Ge
Optical InputFree-space (polished/diffuse MgF₂/quartz/glass windows), FC/PC, or fiber-coupled (9 µm SMF)
RF Output ConnectorSMA or BNC
NEP1.0 × 10⁻¹⁵ – 7.0 × 10⁻¹³ W/√Hz
Dark Current0.001–2000 nA
Sensitive Area55–2000 µm diameter (0.0024–3.14 mm²)
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BrandAOE Tech
OriginShanghai, China
ModelAC201-Rb
Cell Body MaterialPyrex or Fused Silica
Cell DiameterΦ10 / 15 / 20 / 25.0 ± 1.6 mm
Cell Length10 / 20 / 50 / 100.0 ± 0.8 mm
Window Thickness3.0 ± 0.8 mm
Window Angle0° (Flat Parallel)
Fill SpeciesRb (⁸⁵Rb / ⁸⁷Rb), optionally with buffer gases (He, Ne, CH₄, C₂H₆)
Operating Temperature Range (heated variant)40–200 °C
ComplianceDesigned for traceable wavelength calibration per ISO/IEC 17025-aligned optical metrology workflows
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BrandALPHALAS
OriginGermany
TypeActively Q-Switched DPSS Laser
Wavelength Options1047, 1053, 1062, 1064, 946, 1342 nm (with harmonic generation to 671, 532, 473, 355, 266 nm)
Pulse Width0.7–3.0 ns
Repetition Rate0.1 kHz – 100 kHz
Average Power100 mW – >1 W
Pulse Energyup to 100 µJ @ 1 kHz
Beam ModeTEM₀₀
ComplianceCE, RoHS, ISO 9001-manufactured
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BrandA.L.S. GmbH / Advanced Laser Diode Systems
OriginGermany
ModelMSM UltraFast-20 / UltraFast-35
BandwidthDC–20 GHz / DC–35 GHz
Wavelength Range400–1600 nm
Detector StructureMetal–Semiconductor–Metal (MSM)
CapacitanceLow
Series ImpedanceLow
Active AreaOptimized for High-Speed Operation
Bias Voltage6 V (typ.)
Output Interface50 Ω RF coaxial
ComplianceRoHS, CE
Mounting OptionsSM-fiber-coupled (UltraFast-20/35 SM) and free-space (UltraFast-20/35 FS) with integrated focusing lens
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BrandA.L.S. GmbH / Advanced Laser Diode Systems
OriginGermany
Manufacturer TypeAuthorized Distributor
Product OriginImported
ModelDiLas DD50-2
Core ComponentsFiber-Coupled Semiconductor Laser Module, Integrated Laser Driver & TEC Controller, Active Air-Cooled Heat Sink
Max Output Current50 A
Max Output Voltage3–6 V (configurable)
Pulse Rise Time100 µs
Operating ModesCW and Pulsed
Wavelength Options808 nm, 940 nm, 980 nm
Fiber CouplingSMA905 connector, 400 µm or 600 µm core diameter
Thermal Load CapacityUp to 120 W (HS 120)
TEC IntegrationIntegrated Peltier element with temperature sensor and active fan cooling
Control InterfaceFront-panel keypad + RS232
Analog ModulationSupported (50 A version only)
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