KRI Kaufman Ion Source eH 200

Overview

The KRI Kaufman Ion Source eH 200 is a high-stability, dual-configuration (cylindrical and linear) broad-beam ion source engineered for precision ion beam applications in ultra-high vacuum (UHV) and high-vacuum (HV) environments. Based on the classical Kaufman-type discharge principle—where a thermionic cathode emits electrons that ionize process gas in a magnetic confinement region—the eH 200 generates a well-collimated, low-divergence ion beam via electrostatic extraction through a two-grid system. Its design emphasizes reproducible beam current, energy stability (<±0.5% over 8 h), and long-term operational reliability under continuous duty cycles. The eH 200 is not a standalone deposition tool but a critical enabling component for advanced thin-film engineering processes—including ion-assisted deposition (IAD), in-situ substrate pre-cleaning, ion beam etching (IBE), ion beam modification (IBM), and direct ion beam deposition (DD)—within co-evaporation, magnetron sputtering, roll-to-roll, and multi-chamber cluster tool platforms.

Key Features

• Modular architecture supporting both cylindrical and linear ion gun configurations for flexible integration into diverse vacuum platforms (e.g., planetary substrate holders, inline sputter chambers, or web-coating systems)
• Integrated thermionic neutralizer cathode ensures stable space-charge compensation across the full operating range (50–2000 eV), minimizing substrate charging and beam deflection
• eH Plasma Power Pack provides fully programmable, digitally regulated DC power with real-time feedback control of discharge current, extraction voltage, and neutralizer bias—enabling repeatable process recipes
• Water-cooled anode and cathode assemblies sustain >10,000 hours of cumulative operation without performance degradation under rated thermal load
• Gas compatibility extends beyond noble gases (Ar, Xe) to reactive species (O₂, N₂) and organics (CH₄, CF₄), supporting oxidation, nitridation, and polymer surface functionalization
• CF-200 or ISO-K 200 vacuum interface ensures leak-tight mounting and alignment repeatability in Class 100 cleanroom-compatible UHV systems (base pressure ≤5×10⁻⁸ Torr)

Sample Compatibility & Compliance

The eH 200 is compatible with substrates ranging from 50 mm wafers to 600 mm rotating drums, accommodating rigid (Si, fused silica, sapphire), flexible (PET, PI, stainless steel foil), and temperature-sensitive materials (polymers, OLED stacks). It supports GLP- and GMP-aligned process documentation when integrated with PLC-controlled vacuum systems logging timestamped beam parameters (energy, current, gas flow) per ASTM F1524-22 and ISO 14644-1 environmental monitoring protocols. All electrical subsystems comply with IEC 61000-6-3 (EMC) and IEC 61000-6-4 (immunity); mechanical design conforms to ASME BPE-2021 vacuum component standards.

Software & Data Management

The eH Plasma Power Pack communicates via RS-485 or optional Ethernet/IP to host SCADA or LabVIEW-based control systems. Beam parameter logs (voltage, current, gas flow rate, neutralizer emission current) are timestamped and stored in CSV or SQLite format, supporting 21 CFR Part 11-compliant audit trails when paired with validated electronic signature modules. Optional KRI ProcessLink™ software enables recipe-driven automation, interlock monitoring (coolant flow, vacuum interlocks, over-temperature cutoff), and real-time beam profile simulation using empirical ion optics models calibrated against Faraday cup array measurements.

Applications

• Ion-assisted electron-beam evaporation for high-density optical coatings (e.g., TiO₂/SiO₂ AR stacks with <0.1 nm RMS roughness and λ/100 wavefront error)
• In-situ pre-cleaning of substrates prior to sputter deposition—removing hydrocarbon monolayers and native oxides without subsurface damage
• Controlled ion beam etching of multilayer photonic crystals with sub-5 nm depth uniformity across 200 mm substrates
• Stress engineering of DLC and SiNₓ films via controlled ion bombardment during growth (compressive-to-tensile transition at 100–500 eV Ar)
• Surface activation of polymer films for improved adhesion in flexible OLED encapsulation layers
• Low-energy ion beam modification of ferroelectric domain structures in PZT thin films for non-volatile memory applications

FAQ

What vacuum level is required for stable eH 200 operation?

Optimal performance requires a base pressure ≤1×10⁻⁵ Torr; stable discharge ignition occurs down to 5×10⁻³ Torr with appropriate gas flow and magnetic field tuning.
Can the eH 200 operate with oxygen without cathode oxidation?

Yes—the thermionic cathode uses a LaB₆ emitter with proprietary oxide-resistant coating and active neutralizer bias control, enabling >200 h of continuous O₂ operation at 100–300 eV.
Is beam energy calibration traceable to NIST standards?

Beam energy is calibrated in situ using retarding field energy analyzers (RFEAs) traceable to NIST SRM 2045 (electron energy calibration standard); KRI provides factory calibration certificates with uncertainty budgets per ISO/IEC 17025.
How is cooling managed for high-duty-cycle applications?

A closed-loop deionized water system (flow ≥3 L/min, ΔT ≤5°C) is required; KRI supplies coolant interface schematics compliant with SEMI F47-0218 surge immunity specifications.
Does the eH 200 support remote diagnostics and predictive maintenance?

Yes—embedded microcontroller monitors cathode emission decay, grid contamination trends, and power supply ripple; alerts trigger via Modbus TCP when parameters exceed statistically derived control limits (3σ from historical baselines).