E+H Metrology
Filter
Showing all 9 results
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MX 1012 |
| Pricing | Upon Request |
| Wafer Diameter | 200 mm, 300 mm |
| Accuracy | ±0.1 µm |
| Resolution | 10 nm |
| Spatial Resolution | 1 mm |
| Max Scan Passes | 8 |
| Software | MX-NT |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MX 1018 |
| Pricing | Upon Request |
| Wafer Diameters | 200 mm, 300 mm, 450 mm |
| Measurement Accuracy | ±0.3 µm |
| Vertical Resolution | 10 nm |
| Lateral Spatial Resolution | 1 mm |
| Scan Profiles | Up to 8 radial scans (standard: 4 at 45° intervals) |
| Software Platform | MX-NT |
| Measurement Types | Single-point thickness, full-surface TTV, bow, warp, site flatness |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Model | MX 102-6 / MX 102-8 |
| Wafer Diameter Support | 100 mm, 125 mm, 150 mm, 200 mm |
| Measurement Accuracy | ±0.1 µm |
| Resolution | 10 nm |
| Spatial Resolution | 1 mm |
| Scan Profiles | 4 radial profiles at 45° intervals |
| Software | MX-NT |
| Application | Thickness & TTV metrology post-grinding and post-lapping |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MX 2012 |
| Pricing | Available Upon Request |
| Wafer Diameter | 300 mm (configurable for 200 mm) |
| Measurement Accuracy | ±0.5 µm |
| Resolution | 50 nm |
| Thickness Range | 500–1000 µm |
| Measurement Points | 69 |
| TTV (Total Thickness Variation) | Supported |
| Bow & Warp | Supported |
| Stress Evaluation | Optional |
| Measurement Orientation | Vertical (gravity-compensated) |
| Automation Level | Semi-automated (manual load/unload, automated measurement cycle) |
| Software | MX-NT |
| Sensor Principle | Capacitive displacement sensing |
| Probe Architecture | Dual orthogonal aluminum plates (1″ thick), each embedded with 69 capacitive sensors |
| Positioning Repeatability | ≤0.1 µm |
| Vacuum Fixture | Triple-circuit independent vacuum suction with dielectric-compensated polymer membrane |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MX 204 |
| Pricing | Available Upon Request |
| Wafer Diameter | 100 mm, 125 mm, 150 mm, 200 mm, 300 mm |
| Thickness Accuracy | ±0.5 µm to ±1.0 µm |
| Thickness Resolution | 75 nm to 1.0 µm |
| Thickness Range | 100–1000 µm |
| Measurement Principle | Dual-Sided Capacitive Sensing |
| Measured Parameters | Thickness, Total Thickness Variation (TTV), Bow, Warp, Surface Flatness, Stress-Induced Deformation |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Model | MX 301 |
| Wafer Diameters Supported | 50 mm, 75 mm, 100 mm, 150 mm, 200 mm, 300 mm |
| Thickness Accuracy | ±0.5 µm |
| Resolution | 10 nm |
| Dynamic Range | 800 µm |
| Standard Thickness Range | 0–1600 µm |
| Measurement Principle | Dual-Sided Capacitive Distance Sensing |
| Calibration Method | Certified Gauge Blocks |
| Output Interface | RS-232 Serial Interface |
| Display | 5-Digit LED |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MX 7012 |
| Pricing | Upon Request |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Model | MX 604-ST |
| Wafer Diameter | 50–200 mm |
| Thickness Range | 60–300 µm or 250–750 µm |
| Thickness Accuracy | ±1 µm |
| Sensor Active Diameter | 8 mm |
| Sensor Housing Diameter | 20 mm |
| Edge Exclusion Distance | 10 mm |
| Measurement Time per Point | 0.3 s |
| Sheet Resistance Range | 10–2000 Ω/sq |
| Resistivity Range | 0.25–50 Ω·cm (at 250 µm) / 0.75–150 Ω·cm (at 750 µm) |
| Software | EHMaster |
| Brand | E+H Metrology |
|---|---|
| Origin | Germany |
| Model | MX 608 |
| Wafer Sizes Supported | 4", 5", 6", 8" |
| Thickness Range | 300–800 µm (standard 500–800 µm) |
| Max. Warp | 100 µm |
| Resistivity Range | 0.001–200 Ω·cm |
| Thickness Accuracy | ±0.3 µm |
| TTV Accuracy | ±0.1 µm |
| Thickness Resolution | ±0.05 µm |
| Resistivity Accuracy | ±1% (0.001–30 Ω·cm), ±2% (30–100 Ω·cm), ±5% (100–200 Ω·cm) |
| Measurement Time | 7 s (single-point center), 10 s (full radial scan, 180 points on 8″ wafer), ~3 min (18 angular scans × 180 points = 3240-point full mapping) |