General Meters & Instruments
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| Brand | Zhengye |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM/ODM Manufacturer |
| Product Origin | Domestic (China) |
| Model | XG5010 |
| X-ray Tube Voltage | 90–130 kV |
| X-ray Tube Current | 89–455 µA |
| Focal Spot Size | 5–15 µm |
| Cooling Method | Forced Air Cooling |
| Detector Type | Image Intensifier / Flat Panel Detector |
| Field of View | Φ100 mm / 114.9 mm × 64.6 mm |
| Image Resolution | 1392 × 1040 / 1536 × 864 pixels |
| Geometric Magnification | 12×–48× |
| Repeatability Accuracy | ±60 µm |
| Inspection Speed | ≥1.5 points/sec (excluding loading/unloading and stage motion) |
| Stage Dimensions | 515 mm × 460 mm |
| Effective Inspection Area | 450 mm × 410 mm |
| Max Payload | ≤5 kg |
| Radiation Safety | ≤1 µSv/hr (per IEC 61331-1 & IEC 62495) |
| Computer | 22" touchscreen LCD, Intel Core i5, 4 GB RAM, 500 GB HDD |
| System Dimensions | 1136 mm × 1076 mm × 1730 mm |
| Weight | ~750 kg |
| Power Supply | AC 220 V, 10 A |
| Operating Environment | 25 °C ±3 °C, RH 50% ±10% |
| Brand | Zhengye |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM/ODM Manufacturer |
| Country of Origin | China |
| Model | XK25 |
| Pricing | Available Upon Request |
| Measurement Accuracy | ±1 µm |
| Pixel Resolution | 0.4–2.7 µm/pixel |
| Total Optical Magnification | 70×–450× |
| Objective Magnification | 1.4×–9× (Continuously Adjustable) |
| Max. PCB Width | ≤760 mm |
| Field of View | 0.53×0.4 mm – 3.3×2.5 mm |
| Measurable Line Width Range | 20–1200 µm |
| Dimensions (W×D×H, excl. PC) | 960×780×1280 mm |
| Weight | 145 kg |
| Brand | Zhengye |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM/ODM Manufacturer |
| Country of Origin | China |
| Model | XK32 |
| Pricing | Available Upon Request |
| Dimensions (W×D×H) | 1700 mm × 2050 mm × 1600 mm |
| Weight | ~1750 kg (excluding PC) |
| Power Supply | 3P AC 380 V + N + PE, 50 Hz, 5 kW |
| Operating Temperature | 20–40 °C |
| Relative Humidity | 40–70 % RH |
| Lens | Motorized Zoom Lens (0.7×–4.5×) |
| Measurement Field of View (at specified magnifications) | 0.7× = 3.5 mm, 1× = 3.2 mm, 2× = 2.2 mm, 3× = 1.5 mm, 4× = 1.0 mm (±5 % tolerance) |
| Line Width Measurement Range | 20 µm – 1200 µm |
| Line Width Measurement Accuracy | 3 µm @ 1×, 2 µm @ 2×, 1 µm @ 3× and 4× (calibrated using NIST-traceable standard wafer |
| Maximum Sample Size | ≤ 600 mm × 650 mm |
| Illumination | High-Uniformity LED Ring Light |
| Navigation System | CCD-based Macro Navigation Imaging Module |
| Edge Detection | Auto-edge detection with sub-pixel interpolation |
| Data Export | Native Excel (.xlsx) export with statistical summaries (mean, σ, Cp/Cpk, histogram, trend charts) |
| Software Control | Programmable measurement sequence with DXF-based coordinate referencing and scriptable batch execution |
| Brand | ZOLIX |
|---|---|
| Model | Model-310CD |
| Type | High-Speed Optical Chopper |
| Frequency Range | 100 Hz to 120 kHz |
| Frequency Stability | ±0.1% |
| Chopper Blade Diameter | 102 mm |
| Blade Surface Treatment | Photochemical blackening and demagnetization |
| Construction | Open-type chopper assembly |
| Compliance | CE-marked, RoHS-compliant |
| Interface | BNC sync output, optional TTL trigger input |
| Brand | Hefei Kejing |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 4H-SiC Epitaxial Film on 4H-SiC Substrate, P-Type |
| Diameter | 100 mm ±0.5 mm |
| Thickness | 525 µm ±25 µm |
| Epilayer Thickness | 4.3 µm ±10% |
| Epilayer Doping Concentration | 1.4×10¹⁷ cm⁻³ (−30%/+0%) |
| Carrier Concentration | (3–10)×10¹⁶ cm⁻³ |
| Conductivity Type | P-type |
| Surface Finish | Double-Side CMP Polished (Si-face polished only) |
| Substrate Orientation | <0001>, 8.0° ±0.5° off-axis toward (10-10) |
| Off-Orientation (OF) Length | 15.9 mm ±1.7 mm |
| Flat Orientation | 90° clockwise from OF ±5° |
| IF Length | 8.0 mm ±1.7 mm |
| Substrate Resistivity | <0.03 Ω·cm |
| Edge Exclusion | 1 mm |
| Packaging | Class 1000 Cleanroom, Class 100 Bag Vacuum-Sealed or Single-Wafer Cassette |
| Brand | Hefei Kejing |
|---|---|
| Origin | USA |
| Supplier Type | Authorized Distributor |
| Import Status | Imported |
| Model | Fe₃O₄ Single Crystal Substrate |
| Crystal Orientation | <001>, <100>, <110>, <111> |
| Crystal Structure | Cubic, a = 8.40 Å |
| Density | 5.20 g/cm³ |
| Mohs Hardness | 5.5 |
| Dimensions | 5 × 5 × 0.5 mm, 10 × 10 × 0.5 mm |
| Surface Finish | Single-Side Polished |
| Packaging | Class 1000 Cleanroom-Processed, Sealed in Class 100 Cleanroom Bags |
| Brand | Hefei Kejing |
|---|---|
| Origin | USA |
| Distributor Type | Authorized General Distributor |
| Origin Category | Imported |
| Model | GOI-6IN-P-B-50NM-BO100 |
| Device Layer Diameter | 6 inch |
| Device Layer Type | P-type, Boron-doped |
| Device Layer Crystal Orientation | <100> ±10° toward <111> |
| Device Layer Thickness | 50 nm ±3% |
| Device Layer Resistivity | ~1 × 10¹⁸ cm⁻³ |
| Edge Orientation | <111> |
| Device Layer Surface Finish | Single-side polished |
| Buried Oxide (BOX) Thickness | 100 nm |
| Handle Wafer Doping | P-type, Boron-doped |
| Handle Wafer Orientation | <100> |
| Handle Wafer Resistivity | 5–20 Ω·cm |
| Handle Wafer Thickness | 625 µm ±15 µm |
| Handle Wafer Surface Finish | As-received (unpolished) |
| Packaging | Class 1000 cleanroom environment |
| Brand | Hefei Kejing |
|---|---|
| Origin | USA |
| Supplier Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Imported Fe₂O₃ |
| Pricing | Upon Request |
| Crystal Structure | Hexagonal (R3̄c) |
| Lattice Parameters | a = 5.04 Å, c = 13.77 Å |
| Density | 5.20 g/cm³ |
| Mohs Hardness | 6.5 |
| Standard Orientations | <0001>, <10–10>, <11–20> (orientation tolerance ≤ 0.4°) |
| Standard Dimensions | 5 × 5 × 1.0 mm, 10 × 10 × 0.5 mm |
| Surface Finish | Single-side polished |
| Cleanroom Packaging | Class 1000 cleanroom assembled, sealed in Class 100 cleanroom bags |
| Brand | Hefei Kejing |
|---|---|
| Origin | USA |
| Distributor Type | Authorized General Distributor |
| Origin Category | Imported |
| Model | Si/SiO₂/Ti/Pt(111) |
| Silicon Substrate | p-type, resistivity 5–10 Ω·cm |
| SiO₂ Thickness | 300 nm |
| Ti Adhesion Layer | 10 nm |
| Pt(111) Top Layer | 150 nm |
| Maximum Thermal Budget | ≤750 °C for 1 h |
| Wafer Diameter | 2 inch (50.8 mm ± 0.5 mm) |
| Thickness | 279 µm |
| Surface Finish | Single-side polished |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags (Class 1000 cleanroom processed) or individual cassette packaging |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (PRC) |
| Model | Terfenol-D GMM |
| Pricing | Available Upon Request |
| Typical Strain Output | 1500–2000 ppm under Low Magnetic Field (< 200 kA/m) |
| Composition | Tb₀.₃ Dy₀.₇ Fe₁.₉₂ (standard stoichiometry) |
| Density | ~9.2 g/cm³ |
| Curie Temperature | ~380 °C |
| Saturation Magnetostriction (λₛ) | ≥1600 ppm |
| Electrical Resistivity | ~70 µΩ·cm |
| Young’s Modulus | ~50–70 GPa |