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| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Model | Glove Box Integrated |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | RT to 500 °C (customizable) |
| Precursor Channels | Up to 6 (solid & liquid sources supported, customizable) |
| Reactant Gas Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Plasma Gas Channels | 4 (customizable) |
| RF Power | 0–1000 W |
| Pressure Measurement | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum Pump | Standard oil-sealed rotary vane pump |
| Control System | 19″ industrial touch display, embedded IPC running Windows 7, PLC-based real-time control with fieldbus support |
| Source Bottle Heater | RT–200 °C |
| Glove Box Integration | Dual-glove, single-station configuration (customizable) |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | PA Series |
| Process Temperature Range | RT to 450°C |
| Precursor Channels | Up to 4 (customizable), supporting solid & liquid precursors |
| Reactant Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Pressure Monitoring | Triple corrosion-resistant capacitance manometers, 0.005–1000 Torr |
| Base Vacuum | <5×10⁻³ Torr |
| Heating Zone Temperature Range | RT to 150°C |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | PEALD E200SP |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (solid & liquid sources, customizable) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Plasma Gas Lines | 4 (customizable) |
| RF Power | 0–1000 W |
| Pressure Measurement | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5 × 10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled HMI, embedded IPC, Windows 7 OS, PLC-based real-time control |
| Source Bottle Heating | RT–200 °C (independent modules) |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E300S |
| Substrate Size | 300 mm (12 inch) diameter (customizable) |
| Process Temperature Range | RT to 500 °C |
| Temperature Uniformity | ±1 °C (customizable) |
| Precursor Channels | Up to 6 independent, supporting solid & liquid precursors with heated source bottles |
| Reactant Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Pressure Range | 0.005–1000 Torr (dual corrosion-resistant capacitance manometers) |
| Base Pressure | <5 × 10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touchscreen HMI, embedded IPC running Windows 7, PLC-based real-time logic control with fieldbus support |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | UHV ALD |
| Quotation | Upon Request |
| Substrate Diameter | 100 mm (4 inch), customizable |
| Process Temperature Range | RT to 400 °C, ±1 °C accuracy (customizable) |
| Precursor Channels | Up to 6 independent, supporting solid and liquid precursors with dedicated heated source bottles |
| Reactant Channels | 2 standard (customizable) |
| Carrier Gas | N₂ with MFC-controlled flow (customizable) |
| Vacuum System | High-performance turbomolecular pump suite for ultra-high vacuum (UHV) base pressure <5×10⁻⁸ mbar |
| Heating Capability | Source bottles and reactor zone heated up to 150 °C |
| Control System | Industrial embedded IPC with 19″ capacitive touchscreen, Windows 7 OS, real-time PLC-based logic control via Ethernet |
| Transfer System | Manual magnetic wand loading with dedicated load-lock chamber, gate valves, and integrated vacuum interlocks |
| Brand | SuPro Instruments |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Direct Manufacturer |
| Product Origin | Domestic (China) |
| Model | FST 5000 |
| Price | USD 84,000 (approx.) |
| Stress Measurement Range | 1–10,000 MPa (tensile or compressive) |
| Measurement Technology | Dual-Wavelength Laser Scanning |
| Operating Temperature | Ambient (20–25 °C) |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PLD-Workstation |
| Price Range | USD 650,000 – 13.5 million |
| Brand | SurfaceTech |
|---|---|
| Origin | Germany |
| Model | Laser MBE |
| Vacuum Class | Ultra-High Vacuum (UHV) |
| Base Pressure | ≤5×10⁻¹⁰ mbar (typical) |
| Substrate Heater | Resistive, 100–1000 °C (±0.5 °C stability) |
| Target Capacity | Up to 5 × 1-inch targets on rotating carousel |
| Laser Integration | Nd:YAG or excimer laser compatible (193–266 nm, pulse energy up to 500 mJ, repetition rate 1–10 Hz) |
| Load-Lock Capacity | 5 substrates + 2 target carousels |
| In-situ Diagnostics Ports | RHEED, OES, FTIR, QMS (CF-63/CF-100 flanges) |
| Automation Level | Fully programmable deposition sequence with real-time parameter logging and audit trail |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | SurfaceTech |
|---|---|
| Origin | Germany |
| Model | PLD-Workstation |
| Excimer Laser | Coherent COMPexPro 201F or 205F (248 nm) |
| Laser Gas | 20 L premixed KrF gas + 10 L He |
| Process Gases | 2× Mass Flow Controllers (MFC) |
| Substrate Heater | 2" up to 850 °C or 1"/3" up to 1000 °C |
| Substrate Rotation | 0–50 RPM |
| Target Carousel | 4×2" targets, rotation 0–50 RPM |
| Vacuum Chamber | Modular flanged design with multiple CF/NW ports |
| Control System | PC-based LabVIEW software with integrated TFT display |
| Dimensions | ~2200 × 850 × 1600 mm |
| Power Supply | 3×400 VAC/50 Hz or 3×208 VAC/60 Hz |
| Cooling | Integrated chiller unit |
| Compliance | CE-marked, Class 1 laser enclosure per IEC 60825-1 |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | DSC300 Gen3 |
| Wafer Size Support | 300 mm (optional 200 mm) |
| Resolution | 2 µm (line/space) |
| Overlay Accuracy | ≤1.0 µm |
| Depth of Focus (DOF) | High (NA-tunable) |
| Substrate Compatibility | Si, glass, SiC |
| Max. Warp Tolerance | 2 mm bow |
| Optical System | Wynne-Dyson broadband imaging optics |
| Exposure Source | Broadband UV (g-, h-, i-line compatible) |
| Operation Mode | Full-field projection + continuous scanning |
| Automation Level | Fully automated platform |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | DSM8/200 Gen2 |
| Measurement Principle | Dual-microscope optical alignment metrology with TIS-compensated image registration |
| Accuracy | ≤ 0.2 µm (after TIS compensation) |
| Configuration Options | Manual loading (DSM8 Gen2) / Robotic handling with custom chuck (DSM200 Gen2) |
| Illumination Options | Visible + optional IR illumination (for through-silicon feature imaging) |
| Software Platform | Cognex PatMax®-powered automated image analysis with recipe-driven operation |
| Compliance Context | Designed for GLP/GMP-aligned semiconductor process development and high-reliability packaging workflows |
| Brand | SUSS MicroTec |
|---|---|
| Country of Origin | Germany |
| Model | MA/BA Gen4 |
| Type | Semi-Automated Mask Aligner & Thermal/Nanoimprint Lithography Platform |
| Application Scope | R&D, Pilot Production, High-Volume Prototyping |
| Compliance | ISO 9001 Certified Manufacturing, CE Marked, Compatible with ISO 14644-1 Class 5 Cleanroom Integration |
| Optical System | MO Exposure Optics® with Telecentric Illumination |
| Alignment Modes | Top-Side, Bottom-Side, IR Alignment |
| Optional Alignment Accuracy | ≤ 0.5 µm (with DirectAlign®) |
| Resolution | Down to 0.8 µm (hard/soft/vacuum contact mode) |
| Substrate Compatibility | 100–200 mm wafers, reticles, glass, quartz, SiC, GaAs, flexible substrates |
| Automation Level | Semi-Automated with SMILE™ Process Integration Framework |
| Software | LITHOGRAPH® v5.x with Audit Trail, User Role Management, Recipe Versioning, and GLP/GMP-Ready Data Logging |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MA12 Gen3 |
| Type | Semi-Automatic Mask Aligner for Photolithography |
| Application Scope | Mask & Reticle Manufacturing, Wafer-Level Packaging, MEMS, R&D Prototyping |
| Alignment Accuracy | ≤ 1.0 µm (Optical, Off-Axis/IR Options Available) |
| Maximum Substrate Size | 200 mm |
| Max. Wafer Bow Tolerance | ±2 mm |
| Resolution | ≤ 2 µm (Line/Space, with Optimized Resist & Process) |
| Exposure Source | Broadband UV (i-line, g-line, h-line) |
| Numerical Aperture (NA) | Adjustable |
| DOF | Up to 150 µm (Configurable) |
| Software Compliance | Supports Audit Trail, User Access Levels, and Electronic Signature per FDA 21 CFR Part 11 Requirements |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MA200 Gen3 |
| Substrate Compatibility | ≤200 mm wafers & square substrates |
| Alignment Accuracy (Top-Side) | ≤0.5 µm |
| Resolution (Vacuum Contact Mode) | <0.8 µm |
| Resolution (Proximity Mode) | ≥3.5 µm |
| Exposure Optics | MO Exposure Optics® with telecentric illumination, HR/LGO mode switching, customizable filters & reduction kits for smaller wafers |
| Automation Level | Fully automated batch processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration, compatible with SEMI S2/S8 safety standards and GLP/GMP-aligned process documentation workflows |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SUSS MA200 Gen3 |
| Pricing | Upon Request |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | MA300 Gen3 |
| Wafer Size Support | 200 mm & 300 mm |
| Alignment Accuracy (Top-Side) | ±0.5 µm |
| Alignment Modes | Top-Side, Bottom-Side, Infrared (IR) |
| Exposure Method | Contact/Near-Contact Photolithography |
| Optical System | MO Exposure Optics® |
| Application Focus | Advanced Packaging (TSV, RDL, Bumping), MEMS, LED, Power Devices, WLP, Flip-Chip |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Automation Level | Full cassette-to-cassette robotic handling |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MJB4 |
| Substrate Size | Up to 100 mm |
| Alignment Accuracy | Sub-micron |
| Resolution | ≤ 0.5 µm (hard contact) to 2 µm (soft contact) |
| Exposure Modes | Soft Contact, Hard Contact, Vacuum Contact |
| Optical System | MO® Exposure Optics with Telecentric Illumination |
| Uniformity | >95% across field |
| Compatible Substrates | Fragile, III-V, Compound Semiconductors, Glass, Si, SOI, Flexible Foils (thickness up to 4 mm) |
| Brand | Techno Search Corp |
|---|---|
| Origin | Japan |
| Model | TCA4-6 |
| Maximum Operating Temperature | 2000–3000 °C |
| Chamber Vacuum Level | ≤1×10⁻⁶ Torr (≤1.3×10⁻⁴ Pa) |
| Atmosphere Control | High-purity Ar, pressure range 10⁻⁴ Pa to 1 atm |
| Crucible Rotation Speed | 1–10 rpm (manual) |
| Crystal Pulling Speed | 3–38 mm/hr |
| Pulling Stroke | 150 mm |
| Electrode Configuration | 4 arc-melting electrodes + 1 getter electrode |
| Sustained Arc Current | up to 75 A (adjustable) |
| Peak Arc Current | up to 150 A (short-term, adjustable) |
| Crucible Material | Water-cooled copper |
| Chamber Material | Stainless steel |
| Real-time Visual Monitoring | Integrated high-temperature CCD camera with viewport |
| Brand | Ted Pella |
|---|---|
| Origin | USA |
| Type | Manual Cleaving Instrument |
| Model | Small Sample Cleaver |
| Sample Width Capacity | 3–15 mm |
| Sample Thickness Range | 200–900 µm |
| Cleave Platform Dimensions | ≤2 × 2 mm |
| Indent Length | 0.5 mm |
| Compatibility | Designed for use with PELCO® LatticeAx® (1 mm indent) |
| Mounting | Four magnetic fixation points |
| Portability | Handheld, volume ≈ 100 mm³ |
| Brand | TESCAN |
|---|---|
| Origin | Czech Republic |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported High-Energy Ion Implanter |
| Model | Quiin |
| Product Type | Dual-Beam FIB-SEM with Integrated Quantum-Scale Ion Implantation Capability |
| Application Domain | IC Fabrication, Quantum Device Engineering, Advanced Materials Modification |
| Electron Source | Schottky Field-Emission Gun (e-CLIPSE), Lifetime ≥ 2 years |
| Electron Beam Landing Energy | 500 eV – 30 keV |
| Electron Probe Current | ~pA to >100 nA |
| FIB Sources | iVeloce (ECR plasma source, Xe/O₂/Ar/He/N₂), Veloce (Liquid Metal Ion Source, Ga⁺/Ge⁺/Au⁺/Au₃⁺/Si⁺/Au clusters) |
| Ion Beam Energy Range | 3–30 keV |
| Minimum Measurable Ion Current | 20 fA |
| Maximum Probe Current | 1 µA (iVeloce), 50 nA (Veloce) |
| FIB Resolution | 5 nm @ 30 keV (Veloce), 40 nm @ 30 keV (iVeloce) |
| SEM Resolution | 4 nm @ 25 keV |
| Working Distance | 12 mm |
| Beam Intersection Angle | 55° |
| In-situ Heating Stage (FurnaSEM 1000) | Max Temp = 950°C, Ramp Rate = 0.01–3 °C/s, Area = 50 × 30 mm |
| GIS | Energis system with 3 precursor reservoirs (e.g., Pt, W, C, SiOₓ, H₂O, XeF₂) |
| Software Platform | Pegasus GUI & API |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E200S |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (customizable), supporting both solid and liquid precursors with individual source heating (RT–200 °C) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with Mass Flow Controllers (MFCs) |
| Pressure Monitoring | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled display, embedded industrial PC (Windows 7), PLC-based real-time control with fieldbus support |
| Plasma Upgrade Port | Integrated PEALD interface for seamless thermal-to-plasma ALD mode transition without chamber replacement |
| Brand | Thermic Edge |
|---|---|
| Origin | United Kingdom |
| Model | TE2000, TE3000 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Operating Temperature | 2100 °C (vacuum), 2600 °C (inert atmosphere with tungsten heating zone), 3000 °C (graphite heating zone) |
| Vacuum Level | Down to 5 × 10⁻⁸ mbar (with Edwards EXT75DX turbomolecular pump) |
| Sample Capacity | Up to 200 mm (8-inch) wafers |
| Temperature Uniformity | < ±1% across heating zone |
| Temperature Accuracy | Better than ±1% of setpoint |
| Ramp Rate | ≥100 °C/min (heating), up to 200 °C/s (controlled cooling) |
| Pressure Control Precision | < ±0.5 bar |
| Heating Zone Materials | Graphite or tungsten |
| Vacuum Interface Standard | ISO-KF63 or KF25 |
| Cooling System | Integrated water-cooling circuit |
| Safety Systems | Interlocked electronic door lock, real-time O₂ purge logic, over-temperature and over-pressure alarms, LED status indicators |
| Brand | Tianwei (Shandong Tianwei Environmental Technology Co., Ltd.) |
|---|---|
| Model | TW-6481B5+ |
| Origin | Shandong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Application Scope | Length measurement, attenuation profiling, splice/connector loss evaluation, and fault localization in single-mode and multimode optical fiber cables |
| Dynamic Range | 28 dB |
| Maximum Test Distance | 100 km |
| Event Dead Zone | 3 m |
| Sampling Resolution | 2.5 cm |
| Display | 7-inch capacitive touchscreen (800 × 480 TFT LCD) |
| Battery | 3.7 V / 4600 mAh Li-polymer with smart power management |
| Operating Wavelengths | 1310 / 1550 / 1625 / 1650 ±20 nm |
| Compliant File Formats | Bellcore GR-196, SR-4731 |
| Integrated Functions | OTDR, Optical Power Meter (OPM), Visual Fault Locator (VFL, 650 nm), Stable Light Source (LS), Live-fiber detection with automatic optical input warning |
| Interface | USB Type-C, microSD slot |
| Weight | ≤700 g (with battery) |
| Dimensions | ≤200 × 150 × 38 mm |
| Environmental Rating | Operating temperature 0–40 °C |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Measurement Principle | Electrochemical C–V Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI semiconductors |
| Automation Level | Fully Automated (Dry-In/Dry-Out, Auto-Load/Unload/Reload) |
| System Architecture | Modular, Cleanroom-Compatible, Optically & Electrically Isolated Subsystems |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and other III–V, II–VI, IV–IV, and ternary/quaternary compound semiconductors |
| Automation Level | Fully automated electrochemical etching and C–V scanning |
| Compliance | Designed for GLP/GMP-aligned R&D and process development environments |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | SB1000 |
| Temperature Range | 80 K – 700 K |
| Measurement Principle | Differential Thermoelectric Voltage Detection |
| Probe Configuration | 2-probe and 4-probe options |
| Sample Environment | High-vacuum compatible (integrated vacuum chamber) |
| Controller Type | Digital, microprocessor-based Seebeck coefficient controller |
| Cooling Method | Liquid nitrogen cryostat (for low-T) or heated stage (for high-T) |
| Data Acquisition | Real-time transient thermovoltage sampling with statistical averaging |
| Software Interface | PC-based control and analysis (Windows OS) |
| Brand | Tops |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | TL-1 EX, TL-1 Plus |
| Laser Source | Pulsed Fiber Laser (Nd:YAG, 1064 nm) |
| Operation Mode | Q-switched Pulsed |
| Laser Pulse Width | Nanosecond Range |
| Beam Delivery | Precision Galvo Scanning System |
| Safety Class | Class 4 Laser Product (IEC 60825-1) |
| Compliance | CE, RoHS, FDA 21 CFR Part 1040.10 |
| Brand | TPT |
|---|---|
| Origin | Germany |
| Model | HB10 |
| Bonding Methods | Wedge-Wedge, Ball-Wedge, Ribbon & Bump Bonding |
| Wire Diameter Range | 17–75 µm (gold/aluminum) |
| Ribbon Size | up to 25 × 250 µm |
| Ultrasonic Frequency | 62 kHz, PLL-controlled |
| Ultrasonic Power Output | 0–5 W |
| Bond Time | 0–10 s |
| Bond Force | 5–150 cNm (350 cNm optional) |
| Motorized Z-Axis Stroke | 17 mm |
| Deep-Cavity Bond Head Clearance | 16 mm |
| Bond Arm Length | 165 mm |
| Touchscreen Interface | 6.5" LCD |
| Program Storage Capacity | 100 recipes |
| Temperature Control Range | up to 250 °C (±1 °C) |
| Power Supply | 100–240 V AC, ±10%, 50/60 Hz, max. 10 A |
| Dimensions (W×D×H) | 680 × 640 × 490 mm |
| Net Weight | 42 kg |
| Brand | TPT |
|---|---|
| Origin | Germany |
| Model | HB100 |
| Bonding Types | Ball & Wedge |
| Wire Diameter Range | 17–75 µm |
| Ultrasonic Frequency | 63.3 kHz (PLL-controlled, optional 110 kHz) |
| Ultrasonic Power | 0–10 W |
| Bonding Force | 10–200 cN·mm |
| Z-Axis Resolution | 0.5 µm |
| X-Y Resolution | 0.1 µm |
| X-Y Travel | 90 mm |
| Z Travel | 100 mm |
| Heating Stage | Ø90 mm, up to 200 °C ±1 °C |
| Power Supply | 100–240 V AC, 50/60 Hz, ≤10 A |
| Dimensions (W×D×H) | 620 × 750 × 680 mm |
| Weight | 72 kg |
| Brand | TPT |
|---|---|
| Origin | Germany |
| Model | HB16 |
| Bonding Methods | Wedge-Wedge, Ball-Wedge, Ribbon & Bump Bonding |
| Wire Diameter | 17–75 µm (Au/Al) |
| Ribbon Size | up to 25 × 250 µm |
| Ultrasonic Frequency | 62 kHz, PLL-controlled |
| Bond Force | 5–150 cNm (350 cNm optional) |
| Motorized Z-axis Travel | 17 mm |
| Motorized Y-axis Travel | 7 mm |
| Bond Head Depth | 16 mm |
| Bond Arm Length | 165 mm |
| Touchscreen Interface | 6.5" LCD |
| Program Storage | 100 recipes |
| Temperature Control | up to 250 °C ±1 °C |
| Power Supply | 100–240 V AC, 50/60 Hz, ≤10 A |
| Dimensions | 680 × 640 × 490 mm |
| Weight | 42 kg |