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| Brand | Endress+Hauser Metrology |
|---|---|
| Origin | Germany |
| Model | MX608 |
| Wafer Diameter Support | 150 mm, 200 mm, 300 mm |
| Thickness Range | 500–800 µm |
| Max Warp | 100 µm |
| Resistivity Range | 0.001–200 Ω·cm |
| Thickness Accuracy | ±0.3 µm |
| TTV Accuracy | ±0.1 µm |
| Thickness Repeatability | ±0.05 µm |
| Resistivity Accuracy | ±1% (0.001–80 Ω·cm), ±5% (200 Ω·cm) |
| Resistivity Repeatability | ±0.2% (0.001–80 Ω·cm), ±2% (200 Ω·cm) |
| Edge Measurement Capability | up to 130 mm (150 mm wafers), up to 180 mm (200 mm wafers) |
| Single-Point Measurement Time | ~7 s |
| Full-Surface Scan (130/180 points) | ~10 s |
| Multi-Angle Radial Scan (18 scans @ 10° intervals) | ~3 min |
| Carrier Type Detection | P/N identification via Surface Photovoltage (SPV) |
| Brand | Germanlitho (Tianren Micronano) |
|---|---|
| Origin | Shandong, China |
| Manufacturer Type | OEM Manufacturer |
| Origin Category | Domestic (China) |
| Model | GL8 CLIV Gen2 |
| Pricing | Upon Request |
| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model | AWB-04, AWB-08, ROCK-04, ROCK-08 |
| Wafer Size Support | Up to 200 mm |
| Maximum Bonding Temperature | 650 °C |
| Heating Control | Independent top/bottom platen |
| Vacuum Level | ≤10⁻⁵ mbar (with turbomolecular pump) |
| Bonding Processes Supported | Anodic, Thermocompression, Eutectic, Glass Frit, Direct Si–Si, Intermediate Layer Adhesive, SOI, and Plasma-Activated Bonding |
| Automation Level | Semi-automatic (manual load/unload, fully automated bonding cycle) |
| Nanopatterning Capability | Integrated nanoimprint functionality |
| Brand | Enovate3D (West Lake Future Manufacturing) |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | EP400-FP |
| Pricing | Available Upon Request |
| Minimum Feature Size | 1–10 µm |
| Printing Technology | Direct Ink Writing (DIW) |
| Supported Dimensions | 2D, 2.5D, and True 3D Structures |
| Print Head Interface | Quick-Swap Modular Design |
| Multi-Material Capability | Yes |
| Optional Integrated Modules | Mechanical Micro-Drilling, Laser Ablation, In-Situ Laser Sintering |
| Compatible Material Classes | Conductive Metal Nanoparticle Inks, Functional Polymers, Dielectric Composites |
| Brand | EULITHA AG |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Template |
| Pricing | Upon Request |
| Brand | EV Group (EVG) |
|---|---|
| Origin | Austria |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | EVG Mask Aligner Series |
| Exposure Mode | Proximity Mode |
| Resolution | ≥0.5 µm |
| Light Source | Mercury Arc Lamp |
| Wavelength | UV (i-line, g-line, h-line) |
| Illumination Uniformity | ±0.4% |
| Maximum Wafer/substrate Size | 2–8 inch (standard configuration) |
| Compatible Substrate Types | Si, SiC, GaAs, glass, quartz, flexible polymers |
| Alignment Accuracy | Sub-micron top-side and backside alignment |
| Vacuum Chuck Type | Pneumatic or electrostatic (model-dependent) |
| Brand | EVG (EV Group) |
|---|---|
| Origin | Austria |
| Equipment Type | Single-Wafer Wet Cleaning System |
| Wafer Diameter Support | 4–12 inch |
| Cleaning Method | Wet Chemical + DI Water Rinse + Optional Megasonics (1 MHz) / Brush / Diluted Chemistry |
| Throughput | 150 wafers/hour |
| Footprint | 2400 × 4720 × 2555 mm (W × L × H) |
| Process Compatibility | Co-D2W (Compound Die-to-Wafer) Bonding, Hybrid & Fusion Bonding Integration |
| Automation Interface | FOUP-to-FOUP and Cassette-to-Cassette |
| Edge & Backside Treatment | Optional |
| Cross-Contamination Control | Front-to-Back Isolation Architecture |
| Remote Diagnostics | Integrated Ethernet-based Service Protocol |
| Software Control | Fully Programmable Recipe Management with Audit Trail Logging |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | OEM Manufacturer |
| Country of Origin | China |
| Model | CDS-6C |
| Pricing | Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | OEM Manufacturer |
| Regional Category | Domestic (China) |
| Model | DEV-6LS |
| Pricing | Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Direct Manufacturer |
| Regional Classification | Domestic (China) |
| Model | PCS-8LA |
| Pricing | Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Domestic (China) |
| Model | SCP-12LD |
| Pricing | Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | SCP-4LD |
| Pricing | Available upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Regional Category | Domestic (China-made) |
| Model | SCP-6LD |
| Pricing | Available Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | SCP-8C |
| Pricing | Available Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Regional Classification | Domestic (China) |
| Model | SCP-8LD |
| Pricing | Upon Request |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Direct Manufacturer |
| Regional Classification | Domestic (China) |
| Model | SCP-8LSY |
| Pricing | Upon Request |
| Brand | SET/Sensor Electronic Technology |
|---|---|
| Origin | Germany |
| Model | G5/2017 Series |
| Bonding Accuracy | ±0.5 µm |
| Bonding Methods | Thermocompression, Reflow Soldering, UV Curing |
| Compatible Materials | Au, Au/Sn, In, Cu, Cu/Sn |
| Applications | Flip-Chip, Die-to-Substrate (D2S), Chip-to-Chip (C2C), Chip-to-Substrate (C2S), MEMS, MOEMS, MCM, Photonic Integrated Circuits (PICs), Silicon Photonics, Optoelectronic Assembly |
| Brand | Fastmicro |
|---|---|
| Origin | Netherlands |
| Model | FM-PS-PFS-V01 |
| Minimum Detectable Particle Size | 0.5 µm |
| Measurement Speed | Real-time, second-level continuous monitoring |
| Output Formats | KLARF, Excel |
| Interface | USB, Ethernet |
| Sample Stage Diameter | 50 mm (base), compatible with 25 mm wafers |
| Environmental Operation | Ambient air and vacuum-compatible |
| Dimensions (L×W×H) | 405 mm × 183 mm × 209 mm |
| Detection Principle | Mie scattering-based surface particle imaging |
| Brand | Fastmicro |
|---|---|
| Country of Origin | Netherlands |
| Model | FM-PS-PRS-V01 |
| Detection Principle | Mie Scattering |
| Minimum Detectable Particle Size | 0.5 µm (PSL) |
| Measurement Speed | Full-surface imaging in seconds |
| Position Accuracy | 80 µm |
| Position Repeatability | 30 µm |
| Size Accuracy (PSL) | <20% error |
| Surface Roughness Requirement | Ra < 50 nm |
| Output Formats | KLARF, Excel |
| Interface | USB, Ethernet |
| Contactless Operation | Yes |
| Compliance | Designed for ISO 14644-1 cleanroom environments and SEMI S2/S8 safety standards |
| Brand | Filmetrics |
|---|---|
| Origin | USA |
| Model | R50 |
| Measurement Principle | Contact Four-Point Probe (4PP) & Non-Contact Eddy Current (EC) |
| Max Sample Diameter | 300 mm |
| Max Mapping Area | 200 mm × 200 mm |
| XY Stage Travel Options | 100 mm × 100 mm or 200 mm × 200 mm (R50-200) |
| Z-Travel | 100 mm |
| Tilt Stage Range | ±5° |
| Mapping Speed | Up to 1 point/sec |
| Software | RsMapper™ with Pattern Generator, GLP-Compliant Data Logging |
| Brand | KLA |
|---|---|
| Origin | USA |
| Manufacturer | KLA Corporation |
| Product Type | Imported Semiconductor Process Metrology Instrument |
| Automation Level | Fully Automated |
| Probe Configurations | Four-Point Probe (4PP) and Eddy Current (EC) |
| Maximum Sample Diameter | 200 mm (R54-200) or 300 mm (R54-300) |
| Maximum Sample Height | 15 mm |
| Sheet Resistance Range | 10⁻² to 10⁸ Ω/sq |
| Measurement Coordinate Modes | Rectangular, Linear, Polar, Custom Grid |
| XY Stage Precision | High-resolution motorized stage with ±100 mm travel (200 mm total range) |
| Enclosed Chamber | Yes, for light- and environment-sensitive samples |
| Software Platform | RSMapper™ v5.x with GLP-compliant audit trail, 21 CFR Part 11 optional modules |
| Compliance | ASTM F84, ISO 10777, SEMI MF67, USP <1054>, supports GMP/GLP documentation workflows |
| Brand | Forge Nano |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PROMETHEUS |
| Quotation | Upon Request |
| Substrate Capacity | 5–5000 g powder |
| Process Temperature | Up to 200 °C |
| Precursor Channels | 2–8 |
| Weight | >200 kg |
| Footprint | Floor-Standing |
| Uniformity | Conformal atomic-layer coating across entire powder surface |
| Brand | Other brands |
|---|---|
| Origin | Hong Kong |
| Manufacturer Type | General distributor |
| Domestic/Imported | Domestic |
| Model | FP NanoPrinter |
| Price Range | USD 140,000 – 700,000 |
| Key Features | DMD-based dynamic holographic patterning |
| Laser Safety Class | Class 4 |
| XY/Z Feature Size | 142 nm / 175 nm |
| Resolution (Diffraction-Limited) | 285 nm / 500 nm |
| Layer Spacing | ≥ 0.05 µm |
| Throughput | 100 mm³/hr |
| Parallel Foci | ≥ 100 |
| Surface Roughness | ≤ 20 nm |
| Operating Temp | 23 ± 1 ℃ |
| RH | < 50% (recommended < 35%) |
| Vibration Requirement | Active isolation required |
| Power Supply | 220 V, > 35 A |
| Brand | Freiberg Instruments |
|---|---|
| Origin | Germany |
| Model | MDPlinescan |
| Sample Type | Monocrystalline & Multicrystalline Silicon Wafers, Ingots, and Processed Substrates |
| Measurement Principle | µ-PCD (Microwave Photoconductance Decay) & Steady-State Photoconductance |
| Carrier Lifetime Range | 0.1 µs – 10 ms (typ.) |
| Resistivity Range | 0.2 – 10³ Ω·cm |
| Conductivity Type | p-type & n-type |
| Sample Dimensions | Up to 50 × 50 mm² |
| Hardware Interface | Ethernet (TCP/IP, Modbus TCP) |
| Power Supply | 24 V DC, 2 A |
| Dimensions | 174 × 107 × 205 mm |
| Weight | 3 kg |
| Compliance | CE, RoHS, IEC 61000-6-2/6-4 |
| Software Protocol | Standard OPC UA & RESTful API support |
| Brand | Freiberg Instruments |
|---|---|
| Origin | Germany |
| Model | MDPpro 850+ |
| Measurement Principle | Microwave Photoconductance Decay (µPCD) & Quasi-Steady-State Photoconductance (QSS-PCD/MDP) |
| Lifetime Range | 20 ns – 100 ms (for resistivity > 0.3 Ω·cm) |
| Scan Speed | Line scan < 30 s |
| Simultaneous Parameters | Minority carrier lifetime (µPCD/MDP), photoconductivity, resistivity |
| Sample Geometry Recognition | Automatic (G12, M10 bricks, wafers up to Ø300 mm) |
| Laser Sources | 980 nm IR diode (≤500 mW) + 905 nm IR diode (≤9 W) |
| Resistivity Range | 0.5 – 5 Ω·cm (custom ranges available) |
| Conductivity Type | p-type and n-type silicon |
| Compliance | SEMI PV9-1110, CE, ISO 9001 |
| Software Platform | MDP Studio (Windows 11+, .NET Framework, dual Ethernet) |
| Power Supply | 100–250 V AC, 6 A |
| Dimensions (W×H×L) | 2560 × 1910 × 1440 mm |
| Weight | ~200 kg |
| Brand | Freiberg Instruments |
|---|---|
| Origin | Germany |
| Model | MDPspot- |
| Minority Carrier Lifetime Range | 20 ns to several tens of ms |
| Penetration Depth | 500 µm |
| Sample Size | min. 50 × 50 mm², max. 12″ (300 mm) or 210 × 210 mm² |
| Resistivity Range | 0.2 – >10³ Ω·cm |
| Compatible Materials | Silicon, compound semiconductors, oxides, wide-bandgap materials, perovskites, epitaxial layers |
| Brand | G&N |
|---|---|
| Origin | Germany |
| Model | MPS R400CV |
| Wafer Compatibility | 2″, 3″, 4″, 5″, 6″, 8″ |
| Chuck Flatness Error | ≤2 µm |
| Grinding Method | Z-axis plunge grinding with synchronized wafer and spindle rotation |
| Spindle Type | Integrated high-precision air-bearing spindle |
| Spindle Speed | 2560 rpm |
| Spindle Power | 3.7 kW |
| Grinding Wheel Diameter | 200 mm |
| Number of Spindles | 1 |
| Coarse/Fine Feed Range | 170 mm |
| Feed Resolution | ≤1 µm |
| Minimum Step Size | 0.1 µm |
| Coarse Grinding Rate | 2–1000 µm/min |
| Fine Grinding Rate | 2–1000 µm/min |
| Surface Roughness (Ra) | Down to 0.016 µm (with D7 diamond wheel) |
| Total Thickness Variation (TTV) | ≤3 µm per wafer |
| Inter-wafer Thickness Uniformity | ≤2 µm |
| Wheel Material | Diamond or CBN |
| Wheel Mounting | Single or dual-wheel configuration (manual or optional automatic change) |
| Chuck Sizes | Multiple vacuum chucks for 2″–8″ wafers |
| Sample Table Diameter | 400 mm |
| Sample Table Speed | 2–20 rpm |
| Control System | High-precision PLC-based controller with touchscreen HMI |
| Recipe Storage | Multiple programmable process recipes |
| Optional Module | In-situ thickness measurement unit |
| Enclosure | Fully enclosed grinding chamber |
| Machine Weight | 1130 kg |
| Footprint | 1640 × 1210 mm |
| Brand | G&P |
|---|---|
| Origin | South Korea |
| Model | GNP POLI-762 / POLI-500 / POLI-400L |
| Platen Diameter | Φ762 mm (30″), Φ508 mm (20″), Φ406 mm (16″) |
| Platen Material | Anodized Aluminum (optional Teflon-coated) |
| Head & Table Rotation Speed | 30–200 rpm |
| Head Oscillation | ±15 mm |
| Downforce Range | 70–500 g/cm² (1–7.1 psi) |
| System Height | 1850–1960 mm |
| Process Mode | Automated Dry/Wet Sequential Operation |
| Wafer Compatibility | Up to 300 mm (12″), 200 mm (8″), or 150 mm (6″) |
| Compliance | Designed for GLP/GMP-aligned R&D and process qualification environments |
| Brand | GBITEST |
|---|---|
| Model | GCP-CPX |
| Cooling Options | Liquid Nitrogen (LN₂) or Liquid Helium (LHe) |
| Base Temperature | <5 K (with LHe) |
| Sample Stage Diameter | Standard 2-inch, Optional up to 4-inch |
| Cooling Method | Direct cryogen immersion with multi-layer radiation shields |
| Temperature Monitoring | Multiple calibrated Pt sensors with ±10 mK stability |
| Operation Mode | Manual probe positioning |
| Construction | Stainless steel vacuum chamber with optical access windows |
| Vacuum Compatibility | <1×10⁻⁶ Torr typical base pressure |
| Radiation Shield Configuration | Dual-layer (LN₂ and LHe optimized) |
| Visual Access | Integrated quartz viewport on radiation shield |
| Mounting Interface | Standard SM1 (1.035"-40) and kinematic optical breadboard compatibility |
| Electrical Feedthroughs | 24-channel low-noise coaxial + 4-channel triaxial (optional) |
| Compliance | Designed per ISO 14644-1 Class 5 cleanroom handling guidelines for semiconductor lab use |
| Brand | GLASER |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | SMART ETCH II |
| Price | Upon Request |
| Laser Type | Air-Cooled Fiber Laser |
| Scanning Head | German High-Precision Digital Galvo Scanner |
| Wavelength | 1064 nm |
| Output Power | 20 W (Adjustable 1–100%) |
| Pulse Width | 1 ns – 250 ns |
| Beam Quality | M² ≤ 1.3 |
| Repetition Rate | 1 kHz – 4000 kHz |
| Decapsulation Depth Range | 0.01 mm – 3 mm |
| Maximum Scan Area | 150 mm × 150 mm |
| Focusing | Motorized Auto-Focus with Real-Time Red Dot Indicator |
| Imaging System | Integrated Coaxial Color CCD (Same-Optical-Path, Confocal Design) |
| Image Import Formats | X-Ray, SAM, SEM, JPG, PLT |