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| Brand | HalfMoon |
|---|---|
| Origin | Japan |
| Model | MCPD-9800 / MCPD-3700 / MCPD-7700 |
| Wavelength Range | MCPD-9800: 360–1100 nm (High Dynamic Range) |
| MCPD-3700 | 220–1000 nm (UV-Vis-NIR) |
| MCPD-7700 | 220–1100 nm (High Sensitivity) |
| Compliant with ISO 13655 | 2017 (Spectral Measurement of Reflectance and Transmittance) and ASTM E308-22 (Computing CIE Colors from Spectrophotometric Data) |
| Brand | HalfMoon |
|---|---|
| Origin | Japan |
| Model | 1 |
| Wavelength Range | 300–800 nm |
| Incident/Reflectance Angle Range | 45°–90° |
| Measurement Method | Rotating Polarizer Element Configuration |
| Sample Stage | Manual Positioning (100 × 100 mm Max) |
| Spectral Detection | Polychromator-Based Multi-Channel Detection (≥400 Wavelength Channels) |
| Angle Drive Mechanism | Sine-Bar Actuated Reflectance Angle Adjustment |
| Optical Constants Output | Refractive Index (n) and Extinction Coefficient (k) |
| Dimensions | 650 H × 400 D × 560 W mm |
| Weight | ~50 kg |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | C10346-01 |
| Wavelength Range | 200 nm – 950 nm |
| Wavelength Accuracy | ±0.75 nm |
| Spectral Resolution (FWHM) | <2 nm |
| Power Supply | AC 100–240 V, 50/60 Hz |
| Power Consumption | ~70 VA |
| Digital Output Terminals | TTL, up to 5 channels (3 active when measurement trigger is used) |
| Digital Input Terminal | TTL trigger input (1 channel) |
| Busy Signal Output | TTL, 1 channel (4-channel configuration) |
| Analog Output | 2 channels, 0–10 V |
| Fiber Optic Connector | SMA |
| Communication Interface | USB 2.0 Type B |
| Operating Temperature | +10 °C to +30 °C |
| Dimensions | Not specified |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | Imported Instrument |
| Model | C16506-01 |
| Pricing | Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | Imported Instrument |
| Model | C10506-07-06 |
| Pricing | Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | L9570-01 |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | Imported |
| Model | C15740-01 |
| Wafer Sizes Supported | 100 mm (4″) or 150 mm (6″) |
| Measurement Time | ~12 min (4″ wafer, 10× objective, PL mode) |
| PL Wavelength Range | R/G/B channels |
| Spatial Resolution | 1 µm/pixel (standard), 0.5 µm/pixel (high-res mode) |
| Measured Parameters | Shape defects, PL intensity distribution, PL peak wavelength mapping |
| Dimensions | 2000 mm (W) × 1878 mm (H) × 1130 mm (D) |
| Weight | ~1800 kg |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrumentation |
| Model | C11011 Series |
| Pricing | Available Upon Request |
| Measurement Principle | Laser Interferometry (Infrared, 1300 nm) |
| Max. Measurement Speed | 60 Hz |
| Spot Size | ≈ Ø60 µm |
| Working Distance | 155 mm (standard), optional 1000 mm |
| Thickness Range (Glass) | 25 µm – 2.9 mm |
| Thickness Range (Silicon) | 10 µm – 1.2 mm |
| Repeatability (Glass) | ±250 nm |
| Repeatability (Silicon) | ±100 nm |
| Accuracy (Silicon) | ±0.5 µm (≤500 µm), ±0.1% (>500 µm) |
| Max. Layers Measurable | 10 |
| Interface Options | RS-232C, Ethernet, USB 2.0, PIP (Hamamatsu Proprietary Interface Protocol) |
| Power Supply | AC 100–240 V, 50/60 Hz |
| Power Consumption | ~50 VA |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | Imported |
| Model | C12562-04 |
| Measurable Thickness Range (on glass substrate, n=1.5) | 500 nm – 300 µm |
| Measurement Repeatability (1 µm glass film) | ±0.2 nm |
| Measurement Accuracy | ±0.4% (per VLSI Standard Measurement Assurance Documentation) |
| Light Source | Halogen lamp |
| Spot Size | ~φ1 mm |
| Working Distance | 10 mm |
| Maximum Layers Analyzable | 10 |
| Analysis Modes | FFT, Curve Fitting, Optical Constant (n, k) Extraction |
| Measurement Speed | Up to 100 Hz (3 ms/point) |
| External Trigger Support | Enhanced TTL-compatible input |
| Interface | RS-232C, Ethernet |
| Power Supply | AC 100–240 V, 50/60 Hz |
| Power Consumption | ~80 VA |
| Fiber Connector | FC |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | Imported Instrument |
| Model | C15765-01 |
| Pricing | Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Origin Category | Imported Instrument |
| Model | THEMOS mini |
| Pricing | Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | μAMOS |
| Pricing | Upon Request |
| Laser Wavelength | 1.3 µm (standard), optional 1.1 µm pulsed or high-power 1.3 µm (>400 mW) |
| Spatial Resolution (Backside Imaging) | ≤0.26 µm (with 100× HR NIR objective) |
| Detection Method | Lock-in Amplified OBIRCH (Optical Beam Induced Resistance Change) |
| Voltage/Current Biasing | 4-Quadrant ±10 mV–±10 V / ±100 mA |
| Sample Compatibility | 200 mm / 300 mm wafers (front/backside), diced dies, packaged ICs with polished backside, EPI-substrates |
| Vacuum Requirement | ≥80 kPa |
| Compressed Air | 0.5–0.7 MPa |
| Power Supply | AC 220 V, 50/60 Hz, ~3000 W |
| Main Unit Dimensions | 1360 × 1410 × 2120 mm (W×D×H), ~900 kg |
| Control Console | 880 × 700 × 1542 mm, ~255 kg |
| Origin | Jiangsu, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model Variants | Quartz / Silicon / Polymer Templates |
| Pricing | Available Upon Request |
| Template Materials | Fused Silica (Quartz), Single-Crystal Silicon, Silicon Nitride (SiNₓ), Silicon Carbide (SiC), Borosilicate Glass |
| Max Template Diameter | 100 mm (4″) |
| Minimum Feature Size | 50 nm (for ≤2″ area) |
| EBL Service Capability | Down to 30 nm feature size |
| Substrate Compatibility | Conductive (e.g., Si, GaAs, InP) and Non-Conductive (e.g., SiO₂/Si, quartz, polymer-coated wafers) substrates |
| Fabrication Scope | Micro- and nanoscale patterning on Si, III–V (GaAs, InP), II–VI (ZnS, CdTe), and polymer substrates |
| Brand | Hitachi |
|---|---|
| Origin | Japan |
| Model | IM400II / ArBlade 5000 |
| Sample Stage Cooling | Yes (Optional) |
| Vacuum Transfer Capability | Yes (Optional) |
| Dual-Stage Milling Mode | Yes |
| Touchscreen Interface | Yes |
| Maximum Cross-Section Width | 8 mm (±5 mm Traverse Range) |
| Ion Gun Configuration | PLUS Ion Gun (IM400II), PLUS II Ion Gun (ArBlade 5000) |
| Compliance | Designed for SEM/TEM sample preparation per ISO 14644-1 Class 5 cleanroom-compatible operation |
| Origin | Hong Kong |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Mainland China Made |
| Model | Holimatrix |
| Price Range | USD 140,000 – 210,000 |
| Brand | HORIBA |
|---|---|
| Origin | Japan |
| Model | GA-370 |
| Measurable Gases | CO, CO₂, CH₄ |
| Background Gases | N₂, O₂, He, Ar, H₂, Air |
| Measurement Principle | Dual-beam Non-Dispersive Infrared (NDIR) with Alternating Flow Modulation |
| Detection Limit (2σ) | 10 ppb |
| Range | 0–1/2/5/10 ppm |
| Repeatability | ≤ ±2% F.S. |
| Linearity | ≤ ±2% F.S. |
| Zero Drift | ≤ ±0.02 ppm/day, ≤ ±0.03 ppm/week |
| Span Drift | ≤ ±2% F.S./day, ≤ ±3% F.S./week |
| Response Time (T90) | ≤ 180 s |
| Sample & Reference Flow Rate | ~3.5 L/min each (at 50–100 kPa) |
| Analog Outputs | Up to two isolated outputs (0–1 V, 0–10 V, 0–16 mA, 4–20 mA, or 0–20 mA) |
| Operating Temperature | 0–40 °C |
| Humidity | ≤ 85% RH (non-condensing) |
| Vibration Tolerance | ≤ 0.29 m/s² at ≤ 100 Hz |
| Dimensions (W×H×D) | 430 × 221 × 555 mm (including protrusions) |
| Weight | ~18 kg |
| Power Supply | 100–240 V AC, ±10%, max. 250 V |
| Brand | HORIBA |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported |
| Model | PD-Xpadion |
| Pricing | Available Upon Request |
| Particle Detection Sensitivity | 0.5 µm (standard), 0.35 µm (optional), 0.1 µm (with RP-1 integration) |
| Throughput | 12 min per mask (front + back side scan) |
| Mask Size Compatibility | 5-inch to 9-inch |
| Uptime | ≥98% |
| MTBF | 1500 hours |
| Scan Surfaces | Glass substrate, thin-film layer, and patterned side (3-sided inspection) |
| Scan Time per Side | ≤4 minutes |
| Automation Interface | OHT, EFEM, SECS/GEM compliant |
| Optional Modules | Raman-based particle characterization, film thickness & uniformity mapping, film health monitoring, integrated particle removal (RP-1 system) |
| Brand | Hprobe |
|---|---|
| Origin | France |
| Model | IBEX-300 |
| Wafer Compatibility | 100–300 mm |
| Magnetic Field Orientation | Full 3D vector control (in-plane & out-of-plane) |
| Field Scan Speed | Sub-second field reorientation |
| Integrated Calibration | On-board Hall sensors with traceable calibration |
| Software Suite | MRAM characterization, sensor parameter extraction, and automated test sequencing |
| Probe Interface | Compatible with standard RF/microwave and DC probe cards |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments and GLP-compliant magnetic device qualification |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | OEM/ODM Manufacturer |
| Country of Origin | China |
| Model | HPT-L7 |
| Pricing | Upon Request |
| Brand | Huaweina |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | LDW-P |
| Price Range | USD 14,000 – 28,000 |
| Maximum Writing Resolution | 50 nm |
| Minimum Spot Size | 275 nm |
| Minimum Grid Pitch | 75 nm |
| Stage Resolution | 1 nm |
| Absolute Positioning Accuracy | <10 nm |
| Writing Field Options | 100×100 to 1500×1500 µm |
| Laser Power Stability | <±1% RMS |
| Software Platform | LDW-SC Control Suite |
| Optical Principle | Nonlinear Threshold-Dependent Ablation/Modification via Gaussian-Focused Ultrafast Laser Pulses |
| Brand | IBS |
|---|---|
| Origin | France |
| Model | FLEXion 200/400 |
| Product Type | Medium-Current Ion Implanter |
| Wafer Size Compatibility | 8-inch to 12-inch |
| Implant Energy Range | 50 keV (configurable down to 3 keV or up to 400–600 keV for multiply charged species) |
| Primary Implant Species | p⁺ (¹¹B, ³¹P, ⁷⁵As, etc.) |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% (1σ) across wafer under standard conditions |
| Vacuum | <7×10⁻⁷ mbar in beamline and target chamber |
| Gas Lines | 5 integrated (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder-end detection |
| Brand | IBS |
|---|---|
| Origin | France |
| Model | IMC210 |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Semiconductor Doping |
| Implant Energy | 50 keV (adjustable 20–200 keV, upgradable to 3 keV or 400/600 keV for multiply charged ions) |
| Wafer Size Compatibility | 8-inch and 12-inch wafers (backward-compatible with 6-inch, 2–5-inch, and irregular substrates down to 1 cm²) |
| Implant Species | p⁺ (e.g., ¹¹B, ³¹P, ⁷⁵As), Al⁺, H⁺, N⁺, He⁺, Ar⁺ |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% 1σ (measured on 6″ Si wafers with 100 nm SiO₂, ¹¹B⁺ at 100 keV, 1×10¹⁴ atoms/cm²) |
| Vacuum | Ion source <2×10⁻⁶ mbar |
| Gas Delivery | Integrated 5-channel system (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder endpoint detection |
| Origin | Switzerland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported Instrument |
| Model | miBot-01 |
| Price Range | USD 13,500 – 40,500 (FOB) |
| Product Category | Ultra-High-Vacuum Compatible Probe Station |
| Operation Mode | Fully Automated |
| Core Function | In-Situ Nanoscale Electrical Characterization Inside SEM Chambers |
| Actuation System | Four Integrated Piezo-Driven miBot™ Micro-Robots |
| Positioning Resolution | <10 nm (Open-Loop), <2 nm (Closed-Loop with Optional Sensors) |
| Leakage Current | ≤100 fA/V at 1 V bias |
| Signal Interface | Triaxial Shielded Cabling (75 Ω/50 Ω configurable), IEEE-488 & USB 3.0 Control Bus |
| Vacuum Compatibility | 1×10⁻⁷ mbar (UHV-ready with bake-out option) |
| Brand | Instec |
|---|---|
| Origin | USA |
| Model | HCP621G-PM |
| Temperature Range | -190 °C to 600 °C (LN₂ required for sub-ambient operation) |
| Heating/Cooling Rate | +80 °C/min (heating at 100 °C), -50 °C/min (cooling at 100 °C) |
| Temperature Stability | ±0.05 °C (>25 °C), ±0.1 °C (<25 °C) |
| Temperature Resolution | 0.01 °C |
| Control Sensor | 100 Ω Pt RTD |
| Control Method | PID with LVDC low-noise power supply |
| Heating Area | 28 mm × 30 mm |
| Sealing | Hermetic chamber (N₂ or inert gas compatible) |
| Optical Access | Removable φ38 mm viewport, ±60.7° viewing angle, 8.5 mm objective working distance |
| Electrical Interface | Standard BNC, optional triaxial for pA-level measurements |
| Probe Type | Manual lever-actuated Re-W bent probes |
| Sample Stage Grounding | Default grounded, optional floating or triaxial back-electrode configuration |
| Optional Modifications | Non-magnetic construction, internal feedthroughs, transmission-mode optical port, in-chamber wiring posts |
| Operation Mode | Manual probe positioning |
| Compliance | Designed for ASTM F1528, ISO/IEC 17025-aligned lab environments, supports GLP/GMP traceability via software SDK |
| Brand | inTEST–Temptronic |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Import |
| Model | Custom-Configurable Platform |
| Pricing | Available Upon Request |
| Brand | iplas |
|---|---|
| Origin | Germany |
| Model | CYRANNUS® |
| Operating Pressure Range | 10 mbar to atmospheric pressure |
| Plasma Generation Method | External multi-electrode microwave excitation (2.45 GHz or 915 MHz) |
| Substrate Compatibility | Up to 300 mm diameter planar or curved substrates |
| Compatible Precursor Gases | CH₄/H₂/O₂/Ar/He/N₂ (inert and reactive) |
| Deposited Materials | Single-crystal diamond, polycrystalline diamond, nanocrystalline diamond, DLC, Al₂O₃, c-BN |
| Plasma Stability | High reproducibility under dynamic gas flow, pressure, and voltage fluctuations |
| Safety Compliance | Fully shielded microwave cavity |
| Brand | Jandel |
|---|---|
| Origin | United Kingdom |
| Model | Cartridge |
| Probe Spacing Options | 0.500 mm, 0.635 mm, 1.00 mm, 1.27 mm, 1.591 mm (±10 µm tolerance) |
| Tip Material | Tungsten Carbide (standard) |
| Tip Diameter | 0.4 mm (standard), 0.3 mm (for high-density spacing) |
| Tip Radius of Curvature | 12.5, 25, 40, 100, 150, 200, 300, or 500 µm |
| Flatness | ≥ ±0.025 mm |
| Tip Load Range | 10 g to 250 g |
| Insulation Resistance | ≥10¹³ Ω at 500 V (between adjacent probes) |
| Probe Arrangement | Linear or rectangular |
| Buffer Zone | 0.5 mm |
| Automation Level | Manual |
| Brand | JC Nabity |
|---|---|
| Origin | USA |
| Model | NPGS V9.2 |
| Minimum Feature Size | 10 nm |
| Electron Beam Diameter | ≤1 nm |
| Accelerating Voltage Range | 0–40 kV |
| Control Interface | PCIe-516A High-Speed Lithography Board |
| Host Compatibility | Commercial SEM, STEM, or FIB Systems |
| Operating System | Windows 10 |
| Pattern Design Software | QCAD |
| Beam Blanking Frequency | Up to 5 MHz |
| Brand | JEOL |
|---|---|
| Origin | Japan |
| Model | JBX-9500FS |
| Acceleration Voltage | 100 kV |
| Maximum Substrate Size | 300 mm Ø wafers or 6-inch masks |
| Maximum Field Size | 1000 µm × 1000 µm |
| Stage Travel Range | 260 mm × 240 mm |
| Minimum Positioning Unit (LBC) | 0.15 nm (λ/4096) |
| Overlay Accuracy | ≤ ±11 nm |
| Field Stitching Accuracy | ≤ ±10 nm |
| In-Field Placement Accuracy | ≤ ±9 nm |
| Position DAC Resolution | 20-bit |
| Scan DAC Resolution | 14-bit |
| Scan Step Size | 0.25 nm |
| Maximum Scan Rate | 100 MHz |
| Electron Source | ZrO/W Schottky Emitter |