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| Brand | Yingbo Science & Instrument |
|---|---|
| Origin | Shanghai, China |
| Model | GaN Wafer-Level Dynamic Power Testing System |
| Application | Dynamic Parameter Characterization of GaN Power Devices under Switching Operation |
| Temperature Range | 25 °C to 175 °C |
| Gate Voltage Range | –12 V to +12 V (continuously adjustable) |
| Switching Frequency Range | 10 kHz to 500 kHz |
| Duty Cycle Range | 10% to 90% |
| Minimum Pulse Width | 1 µs |
| Measurement Modes | Dynamic R<sub>DS(on)</sub> (HSW/ZVS), Dynamic V<sub>SD</sub>, Dynamic V<sub>th</sub>, Pulse I–V, Dynamic HTOL/SALT |
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