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| Brand | Okmetic |
|---|---|
| Origin | Finland |
| Wafer Type | SOI (Silicon-on-Insulator) |
| Substrate Material | Single-Crystal Silicon |
| Structural Configuration | Handle Layer / Buried Oxide (BOX) / Device Layer |
| Available Formats | Prime, Double-Side Polished (DSP), Patterned Device Layer Options |
| Process Compatibility | MEMS, Deep Reactive Ion Etching (DRIE), Anodic Bonding, Wafer-Level Sealing |
| Resistivity Range | 0.001–10,000 Ω·cm |
| Device Layer Thickness | 1–50 µm (customizable) |
| BOX Thickness | 0.1–4 µm (customizable) |
| Diameter Options | 100 mm, 150 mm, 200 mm |
| Surface Roughness (Ra) | <0.2 nm (prime/DSP) |
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