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| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Etchlab 200 |
| Etching Principle | Equipped with magnetic-field-enhanced Inductively Coupled Plasma (ICP/ISM) or Non-Linear Discharge (NLD) plasma source |
| Etch Rate | Up to 1 µm/min (material and process dependent) |
| Wafer Size Compatibility | 100–200 mm (standard), upgradable to 300 mm |
| Selectivity | Up to 1:20 (e.g., SiO₂:Si) |
| Uniformity | ±5% across wafer |
| Residue Level | <1% (post-etch residue coverage) |
| Aspect Ratio Capability | Up to 1:20 (depth:width) |
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