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| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Centrotherm c.RAPID 150 / RTP 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 6-inch wafer or substrate |
| Operating Atmosphere | Ambient pressure or controlled vacuum (1–50 mbar) |
| Max. Ramp Rate | 150 K/s |
| Max. Cool-down Rate | 150 K/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±0.5 °C across 6″ wafer |
| Max. Process Temperature | 1150 °C (unlimited dwell at ≤750 °C) |
| Heating System | 24 independently PWM-controlled lamp arrays |
| Cooling Water Requirement | 20 L/min |
| Exhaust Flow | 250 m³/h |
| Substrate Compatibility | Si, GaAs, SiC, GaN, Sapphire, graphite carriers |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | centrotherm Activator150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6-inch) wafers |
| Operating Atmosphere | Ambient pressure or controlled vacuum/pressure |
| Maximum Ramp Rate | 150 K/s |
| Maximum Cool-down Rate | 150 K/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ≥95% across wafer surface |
| Max Process Temperature | 1850 °C |
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